RT5880 Search Results

RT5880

Contextual Info: TECHNICAL DATA SHEET 1/4 R201.508.000 SMT PLUG RECEPTACLE Series : SMPM FULL DETENT All dimensions are in mm. . po . ao COMPONENTS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS - PLATING µm MATERIALS BERYLLIUM COPPER BERYLLIUM COPPER PEEK

Contextual Info: TECHNICAL DATA SHEET 1/4 R222.428.700 MALE STRAIGHT RECEPTACLE FOR PCB Series : SMP PIN IN PASTE - SMOOTH BORE All dimensions are in mm. . po . ao COMPONENTS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS - PLATINGS µm MATERIALS STAINLESS STEEL + BRASS

CONNECTOR SMP

Abstract: RT5880
Contextual Info: TECHNICAL DATA SHEET 1/6 R222.508.700 MALE STRAIGHT RECEPTACLE FOR PCB Series : SMP SMT TYPE - SMOOTH BORE - REEL 500 All dimensions are in mm. . pn . ao COMPONENTS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS - PLATING µm MATERIALS STAINLESS STEEL + BRASS

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin

BC548 TRANSISTOR REPLACEMENT

Abstract: transistor BC548 Philips Capacitor RT5880 BC548 transistor bc548 bp HE bc548 BC548 transistor bc548 equivalent MBG431
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin

Contextual Info: TECHNICAL DATA SHEET 1/4 R201.508.700 SMT PLUG RECEPTACLE Series : SMPM SMOOTH BORE All dimensions are in mm. . pn . ao COMPONENTS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS - PLATING µm MATERIALS BERYLLIUM COPPER BERYLLIUM COPPER PEEK

RT5880

Abstract: teflon s-parameter amplifier mixer circuit diagram smd 2a y 3c TOKO 10.7 transformer vogt transformer LO dc to 3 ghz lna amplifier application circuits vogt s2 t 2333 vogt l4
Contextual Info: S IE M E N S PMB 2333 Table of Contents Page 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w . 2 F e a tu re s. 2

T2333

Abstract: K 2333 RT5880 GPS05864 teflon s-parameter gilbert cell mixer
Contextual Info: ICs for Communications Mixer/Amplifier PMB 2333 Version 1.2 Preliminary Data Sheet 02.96 T2333-XV12-P1-7600 PMB 2333 Revision History: Previous Version: Page in Version Page (in new Version) Current Version: 02.96 none Subjects (major changes since last revision)

Contextual Info: SIEMENS ICs for Communications LNA/MIXER P M B 2332 Version 1.2 Preliminary Specification 06.96 T2332-XV12-P2-7600 053SbO S 0 C H flb 4 3 7bfc> E d itio n 06 .96 A u s g a b e 06 .9 6 P u b lis h e d b y S ie m e n s A G , B e re ic h H a lb le ite r, M a rk e tin g K o m m u n ik a tio n , B ala n s tra B e 73,

"if amplifier" siemens

Contextual Info: PMB 2333 SIEMENS Table of Contents Page 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w . 2 F e a tu re s .2

RT5880

Abstract: RO6002
Contextual Info: TECHNICAL DATA SHEET 1/6 R222.508.722 MALE STRAIGHT RECEPTACLE Series : SMP SMT TYPE - CATCHER'S MITT All dimensions are in mm. . pn . ao COMPONENTS MATERIALS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS - STAINLESS STEEL,BRASS BERYLLIUM COPPER

imo 2.1 un 1950 safety data sheet

Abstract: T2333 vogt transformer imo 2.1 un 1950 T2333-XV12-P3-7600 RT5880 RT5880 SMA amplifier mixer circuit diagram imo 2.2 un 1950 stocko mks
Contextual Info: ICs for Communications Mixer/Amplifier PMB 2333 Version 1.2 Preliminary Data Sheet 09.97 T2333-XV12-P3-7600 Edition 09.97 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München Siemens AG 1995. All Rights Reserved.

vogt transformer

Abstract: toko balun TOKO 10.7 transformer RT5880 VOGT pd Transformer tee transformer vogt Vogt Siemens Halbleiter
Contextual Info: ICs for Communications LNA/MIXER PMB 2332 Version 1.2 Preliminary Specification 06.96 T2332-XV12-P2-7600 GLWLRQ  3XEOLVKHG E\ 6LHPHQV $* %HUHLFK +DOEOHLWHU 0DUNHWLQJ .RPPXQLNDWLRQ %DODQVWUD‰H   0QFKHQ Siemens AG 1995. All Rights Reserved.

RT5880

Abstract: SHEET16 R222
Contextual Info: TECHNICAL DATA SHEET 1/6 R222.508.000 MALE STRAIGHT RECEPTACLE FOR PCB Series : SMP SMT TYPE - FULL DETENT - REEL 500 All dimensions are in mm. . pn . ao COMPONENTS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS - PLATINGS µm MATERIALS

RO6002

Abstract: R222.428.300
Contextual Info: TECHNICAL DATA SHEET 1/4 R222.428.300 MALE STRAIGHT RECEPTACLE FOR PCB Series : SMP PIN IN PASTE - LIMITED DETENT All dimensions are in mm. . pn . ao COMPONENTS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS - PLATINGS µm MATERIALS STAINLESS STEEL + BRASS

R222.508.300

Abstract: R222
Contextual Info: TECHNICAL DATA SHEET 1/6 MALE STRAIGHT RECEPTACLE FOR PCB R222.508.300 SMT TYPE - LIMITED DETENT - REEL 500 Series : SMP All dimensions are in mm. . pn . ao COMPONENTS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS - PLATING µm MATERIALS

RO6002

Abstract: RT5880
Contextual Info: TECHNICAL DATA SHEET 1/5 R222.428.000 MALE STRAIGHT RECEPTACLE FOR PCB Series : SMP PIN IN PASTE - FULL DETENT All dimensions are in mm. . pn . ao COMPONENTS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS - PLATINGS µm MATERIALS STAINLESS STEEL + BRASS

Contextual Info: CGHV1F006S 6 W, DC - 18 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and

Philips Capacitor

Abstract: transistor BC548 RT5880 PHILIPS 4312 amplifier capacitor 1500 uF marking c8 transistor 2222 032 Philips 135 Capacitor Transistor Marking C3 bc548 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 22 Philips Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency

Contextual Info: SIEMENS ICs for Communications Mixer/Amplifier P M B 2333 Version 1.2 Preliminary Data Sheet 09.97 T2333-XV12-P3-7600 Edition 09.97 Ausgabe 09.97 Published by Siem ens AG, Bereich Halbleiter, M arketingKom m unikation, BalanstraBe 73, 81541 München Herausgegeben von Siem ens AG,