HIGH VOLTAGE MOSFET, TO-220 CASE Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS CJU04N60 600V N-Channel Power MOSFET TO-220 General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS CJP04N60 600V N-Channel Power MOSFET TO-220 General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS CJP04N60 600V N-Channel Power MOSFET TO-220 General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new

UTC UF730L

Abstract: UF730L-TA3-T UF730 UF730-TA3-T UF730-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF730 MOSFET 5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UF730 power MOSFET is designed for high voltage, high speed power switching applications such as switching power suppliess, switching adaptors.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS CJP04N60 600V N-Channel Power MOSFET General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new

MOSFET 50V 100A TO-220

Abstract: UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1  TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220/220F Plastic-Encapsulate MOSFETS CJP04N60,CJPF04N60 600V N-Channel Power MOSFET General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

MOSFET 50V 100A TO-220

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF740-E Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET 1  TO-220F TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V

Abstract: MOSFET 400V TO-220 TQ2 rohs UF840-TQ2-T UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T uf840l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 „ DESCRIPTION 1 TO-263 TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1  TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching

6n65g

Abstract: mosfet VDS 650V ID 6A TO 252
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N65 Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 6N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N65 Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-220  DESCRIPTION The UTC 6N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

mosfet VDS 650V ID 6A TO 252

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N65 Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 6N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N65 Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251  DESCRIPTION The UTC 6N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

IRF820

Contextual Info: IRF820 N-channel 500V - 2.5Ω - 4A TO-220 PowerMesh II MOSFET General features Type VDSS RDS on ID IRF820 500V <0.3Ω 4A • Extremely high dv/dt capability ■ 100% avalnche tested ■ New high voltage benchmark ■ Gate charge minimized 3 1 2 TO-220

IRF820

Abstract: JESD97 IRF8204
Contextual Info: IRF820 N-channel 500V - 2.5Ω - 4A TO-220 PowerMesh II MOSFET General features Type VDSS RDS on ID IRF820 500V <0.3Ω 4A • Extremely high dv/dt capability ■ 100% avalnche tested 3 ■ New high voltage benchmark ■ Gate charge minimized 1 TO-220 c

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N70 Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET 1  TO-220F TO-220 DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

5N60G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET 1 „ TO-220F TO-220 DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

5n60b

Abstract: 5N60A 5n60-b
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N60 MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION TO-220 The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N70 Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

utc 5n60l

Abstract: 5N60L 5N60L-TF2-T 5N60L-TN3-R 5N60 5N60G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION „ The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high