HIGH-SPEED SWITCHING P-CHANNEL MOS Search Results

marking Fn

Contextual Info: MCH6614 N- Channel and P-Channel Silicon MOSFET Very High-Speed Switching Applications Features TENTATIVE •Composite type with a low on-resistance, very high-speed switching, N-channel and P-channel MOSFET facilitating high-density mounting. •Low On-state resistance.

MOSFET IGSS 100uA

Contextual Info: MCH6615 N- Channel and P-Channel Silicon MOSFET Very High-Speed Switching Applications Features TENTATIVE •Composite type with a low on-resistance, very high-speed switching, N-channel and P-channel MOSFET facilitating high-density mounting. •Low On-state resistance.

IT0251

Abstract: MCH6615
Contextual Info: Ordering number : ENN6796 MCH6615 N-Channel and P-Channel Silicon MOSFETs MCH6615 Ultrahigh-Speed Switching Applications • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs,

2SJ172

Abstract: 2SK970 4AM16
Contextual Info: 4AM16 Silicon N Channel/P Channel Power MOS FET Array Application SP–12 High speed power switching Features 1 • Low on–resistance N Channel : RDS on ≤ 0.17Ω, VGS = 10V , ID = 4A P Channel : RDS(on) ≤ 0.2Ω, VGS = -10V , ID = -4A • High speed switching

W351

Abstract: FW351
Contextual Info: Ordering number : ENN7298 FW351 N-Channel and P-Channel Silicon MOSFETs FW351 Ultrahigh-Speed Switching Applications Preliminary • N-channel and P-channel MOSFETs featuring low ON-resistance, high-speed switching, and 4V voltage operation are encapsulated in one package to enable

2SJ172

Abstract: 2SK970 4AM16
Contextual Info: 4AM16 Silicon N Channel/P Channel Power MOS FET Array Application SP–12 High speed power switching Features 1 • Low on–resistance N Channel : RDS on ≤ 0.17Ω, VGS = 10V , ID = 4A P Channel : RDS(on) ≤ 0.2Ω, VGS = -10V , ID = -4A • High speed switching

4AM16

Abstract: SP-12 Hitachi DSA0046
Contextual Info: 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N Channel: RDS on ≤ 0.17 , VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –4 A • High speed switching

MCH6614

Contextual Info: Ordering number : ENN6795 MCH6614 N-Channel and P-Channel Silicon MOSFET MCH6614 Ultrahigh-Speed Switching Applications • The MCH6614 incorporates two elements that are an unit : mm N-channel and a P-channel MOSFETs that feature low 2173 ON resistance and high-speed switching, thereby

Contextual Info: 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • L ow on-resistance N Channel: RDS on>< 0.17 i i , V GS = 10 V, ID = 4 A P Channel: RDS(on < 0.2 Q , V GS = - 10 V, ID = - 4 A • High speed switching

Contextual Info: 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • Low on-resistance N Channel: RDS o1i < 0.17 ¿1, VGS = 10 V, ID= 4 A P Channel: RDS(o1i) < 0.2 Q, V GS= -10 V, ID= -A A • High speed switching

SP12TA

Abstract: Hitachi DSA002727
Contextual Info: 4AM15 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N Channel: RDS on 0.5 , VGS = 10 V, I D = 2 A P Channel: RDS(on) 0.9 , VGS = –10 V, I D = –2 A • Low drive current • High speed switching

Hitachi 2SJ

Abstract: Hitachi DSA002751
Contextual Info: 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N Channel: RDS on ≤ 0.17 Ω, VGS = 10 V, ID = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A • High speed switching

4AM16

Contextual Info: 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N Channel: RDS on ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, I D = –4 A • High speed switching

69-206

Abstract: MCH6613
Contextual Info: Ordering number : ENN6920 MCH6613 N-Channel and P-Channel Silicon MOSFETs MCH6613 Ultrahigh-Speed Switching Applications unit : mm 2173A [MCH6613] 0.3 4 0.25 2.1 • The MCH6613 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling

6AM14

Abstract: Hitachi DSA00310
Contextual Info: 6AM14 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • • • • Low on-resistance Low drive current High speed switching High density mounting Outline 6AM14 Absolute Maximum Ratings Ta = 25°C Ratings

W103

Abstract: FW106 P CHANNEL MOSFET
Contextual Info: FW106 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • High density mounting is possible because of the complex type which holds two chips of a low on-resistance, Very-high speed switching and 4-volt-drive, P channel MOSFET in one package.

Contextual Info: Ordering number:EN4884 FX601 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of tow low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.

Contextual Info: Ordering number:EN4888 FX605 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.

4886

Contextual Info: Ordering number:EN4886 FX603 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.

marking 601

Abstract: FX601
Contextual Info: Ordering number:EN4884 FX601 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of tow low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.

Contextual Info: Ordering number:EN4886 FX603 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.

fx605 equivalent

Contextual Info: Ordering number:EN4888 FX605 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.

FW103

Abstract: ati electric catalog EN5305A
Contextual Info: Ordering number : EN5305A P-Channel Silicon MOSFET FW103 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance unit: mm • Ultrahigh-speed switching. 2129-SOP8 • Composite type with two 4V-drive P-channel MOSFETs facilitating high-density mounting.

Contextual Info: Ordering number : ENN6796 N-Channel and P-Channel Silicon MOSFETs MCH6615 ISMÊYOi Ultrahigh-Speed Switching Applications Features Package Dimensions • The M CH 6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching M O SFE T s,