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    IT0251

    Contextual Info: Ordering number : ENN6649 Diffused Junction Type Silicon Diode SVC325 IS M iY O l Varactor Diode Features Package Dimensions • Miniaturization and high-integration o f tuner sets can be easily achieved due to the small package. • High capacitance ratio and high quality factor.


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    ENN6649 SVC325 SVC325] IT0251 PDF

    Contextual Info: Ordering number : ENN6795 N-Channel and P-Channel Silicon MOSFET MCH6614 SAÜYO Ultrahigh-Speed Switching Applications Features Package Dimensions • The M CH 6614 incorporates two elements that are an N-channel and a P-channel M O SF E T s that feature low


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    ENN6795 MCH6614 MCH6614] PDF

    MCH6614

    Contextual Info: Ordering number : ENN6795 MCH6614 N-Channel and P-Channel Silicon MOSFET MCH6614 Ultrahigh-Speed Switching Applications • The MCH6614 incorporates two elements that are an unit : mm N-channel and a P-channel MOSFETs that feature low 2173 ON resistance and high-speed switching, thereby


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    ENN6795 MCH6614 MCH6614 MCH6614] PDF

    70306

    Abstract: MCH6615 IT0251
    Contextual Info: MCH6615 Ordering number : EN6796A SANYO Semiconductors DATA SHEET MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low


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    MCH6615 EN6796A MCH6615 70306 IT0251 PDF

    IT0251

    Abstract: ta2909 MCH6614 TA-2909
    Contextual Info: MCH6614 注文コード No. N 6 7 9 5 A 三洋半導体データシート 半導体ニューズ No.N6795 をさしかえてください。 MCH6614 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス


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    MCH6614 N6795 900mm2 --200mA 900mm2 IT02517 IT02516 IT02518 IT0251 ta2909 MCH6614 TA-2909 PDF

    SVC325

    Abstract: IT0251
    Contextual Info: Ordering number : ENN6649 SVC325 Diffused Junction Type Silicon Diode SVC325 Varactor Diode • • Package Dimensions Miniaturization and high-integration of tuner sets can be easily achieved due to the small package. High capacitance ratio and high quality factor.


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    ENN6649 SVC325 SVC325] SVC325 IT0251 PDF

    transistor SM 2174

    Abstract: tt2050 ENN6674 IT025
    Contextual Info: Ordering number : ENN6674 j _ NPN Triple Diffused Planar Silicon Transistor TT2050 IsatlYOl Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed.


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    ENN6674 TT2050 TT2050] transistor SM 2174 tt2050 IT025 PDF

    Contextual Info: MCH6615 Ordering number : EN6796A MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.


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    MCH6615 EN6796A MCH6615 PDF

    TA358

    Abstract: IT0251 TA-3587 SVC325
    Contextual Info: 注文コード No. N 6 6 4 9 A SVC325 三洋半導体データシート 半導体ニューズ No.N6649 とさしかえてください。 SVC325 特長 シリコン拡散接合形 可変容量ダイオード ・小型パッケージのためセットの小型化高密度化が容易である。


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    SVC325 N6649 20mVrms TA-3587 TA-3070 TA-3039 IT02513 TA358 IT0251 SVC325 PDF

    Contextual Info: MCH6614 Ordering number : EN6795A MCH6614 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6614 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.


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    MCH6614 EN6795A MCH6614 PDF

    TT2050

    Abstract: TA-3037 IT0251
    Contextual Info: Ordering number : ENN6674 TT2050 NPN Triple Diffused Planar Silicon Transistor TT2050 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).


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    ENN6674 TT2050 TT2050] TT2050 TA-3037 IT0251 PDF

    IT0251

    Abstract: MCH6615
    Contextual Info: Ordering number : ENN6796 MCH6615 N-Channel and P-Channel Silicon MOSFETs MCH6615 Ultrahigh-Speed Switching Applications • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs,


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    ENN6796 MCH6615 MCH6615 MCH6615] IT0251 PDF

    MCH6614

    Abstract: TA-2909
    Contextual Info: MCH6614 Ordering number : EN6795A SANYO Semiconductors DATA SHEET MCH6614 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6614 incorporates two elements in the same package which are N-channel and P-channel low


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    MCH6614 EN6795A MCH6614 TA-2909 PDF

    SVC325

    Contextual Info: SVC325 Ordering number : EN6649A SVC325 Diffused Junction Type Silicon Diode Varactor Diode Features • • • Miniaturization and high-integration of tuner sets can be easily achieved due to the small package. High capacitance ratio and high quality factor.


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    SVC325 EN6649A SVC325 PDF

    CPH3410

    Contextual Info: Ordering number : ENN6777 CPH3410 N-Channel Silicon MOSFET CPH3410 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2152A [CPH3410] 2.9 0.15 0.4 0.6 3 0.2 • 2 1


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    ENN6777 CPH3410 CPH3410] CPH3410 PDF

    IT0251

    Abstract: MCH6615 Diode catalog
    Contextual Info: MCH6615 Ordering number : EN6796A SANYO Semiconductors DATA SHEET MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low


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    MCH6615 EN6796A MCH6615 IT0251 Diode catalog PDF

    IT0251

    Abstract: CPH3410 IT02515
    Contextual Info: Ordering number : ENN6777 CPH3410 N-Channel Silicon MOSFET CPH3410 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2152A [CPH3410] 2.9 0.15 0.6 0.4 0.2 • 3 2 1


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    ENN6777 CPH3410 CPH3410] IT0251 CPH3410 IT02515 PDF