DATA SHEET OF IC 317
Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
Text: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,
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IC51-128
Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
Text: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials
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77106
Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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HM62W8201HLJP-12
Abstract: Hitachi DSA00164
Text: HM62W8201H Series 16M High Speed SRAM 2-Mword x 8-bit ADE-203-955A (Z) Preliminary Rev. 0.1 May. 28, 1999 Description The HM62W8201H Series is an asynchronous high speed static RAM organized as 2-Mword × 8-bit. It has realized high speed access time by employing the most advanced CMOS process and high speed circuit
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HM62W8201H
ADE-203-955A
44-pin
36-pin
ns/12
ns/15
HM62W8201H-10
HM62W8201HJP/HLJP
HM62W8201HLJP-12
Hitachi DSA00164
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IC Package Names and Code Designations
Abstract: data sheet IC 7408 7404 not gate ic MSP 044 THERMISTOR enplas otq-100-0.5 IC 7404 7406 IC51-1004-809 ic 7404 datasheet HLP40R ic 7408
Text: Hitachi Semiconductor Package DATA BOOK ADE 410-001A Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional capacity and higher density and developing packages
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10-001A
IC Package Names and Code Designations
data sheet IC 7408
7404 not gate ic
MSP 044 THERMISTOR
enplas otq-100-0.5
IC 7404 7406
IC51-1004-809
ic 7404 datasheet
HLP40R
ic 7408
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Untitled
Abstract: No abstract text available
Text: HM5117805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-630B Z Rev. 2.0 Nov. 8, 1996 Description The Hitachi HM5117805 is a CMOS dynamic RAM organized 2,097,152-word X 8-bits. It uses the most advanced CMOS technology for high performance and low power. The HM5117805 offers extended data
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HM5117805
152-word
ADE-203-630B
28-pin
ns/60
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Untitled
Abstract: No abstract text available
Text: HM624256A Series 262144-word x 4-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The Hitachi HM624256A is a high speed 1M Static RAM organized as 262,144-word x 4-bit. It realizes high speed access time 20/25/35 ns and low power consumption, employing CMOS process technology
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HM624256A
262144-word
144-word
32-bit
HM624256A,
400-mil
28-pin
HM624256AP/ALP
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Untitled
Abstract: No abstract text available
Text: HM5117805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-630B Z Rev. 2.0 Nov. 8, 1996 Description The Hitachi HM5117805 is a CMOS dynamic RAM organized 2,097,152-word x 8-bits. It uses the most advanced CMOS technology for high performance and low power. The HM5117805 offers extended data
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HM5117805
152-word
ADE-203-630B
28-pin
ns/60
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flash 32 Pin PLCC 16mbit
Abstract: 398x
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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CBV2
Abstract: HN27C301
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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Untitled
Abstract: No abstract text available
Text: HM62W8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 (Am CMOS
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HM62W8127H
HM62W9127H
131072-word
HM62W8127H/HM62W9127H
072-word
400-mil
32/36-pin
HM62W8127HJP/HLJP
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Untitled
Abstract: No abstract text available
Text: HM62W8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word X 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 (Am CMOS
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HM62W8127H
HM62W9127H
131072-word
HM62W8127H/HM62W9127H
072-word
400-mil
32/36-pin
HM62W8127HJP/HLJP
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17805T
Abstract: 51W17805 51w17805j
Text: HM51W17805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-631B Z Rev. 2.0 Nov. 12, 1996 Description The Hitachi HM51W17805 is a CMOS dynamic RAM, organized 2,097,152-words x 8-bits. It employs the most advanced CMOS technology for high performance and low power consumption. The HM51W17805
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HM51W17805
152-word
ADE-203-631B
152-words
28-pin
ns/60
17805T
51W17805
51w17805j
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F31Z
Abstract: 922z
Text: HM62W8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Description The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word x 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 fim CMOS
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HM62W8127H
HM62W9127H
131072-word
HM62W8127H/HM62W9127H
072-word
400-mil
32/36-pin
8127HJP/HLJP
F31Z
922z
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Untitled
Abstract: No abstract text available
Text: HM51W17805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-631B Z Rev. 2.0 Nov. 12, 1996 Description The Hitachi HM51W17805 is a CMOS dynamic RAM, organized 2,097,152-words X 8-bits. It employs the most advanced CMOS technology for high performance and low power consumption. The HM51W17805
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HM51W17805
152-word
ADE-203-631B
152-words
HM51W17805
28-pin
ns/60
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m5118160
Abstract: m51161 S-024BB
Text: HM5116160 Series HM5118160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-634D Z Rev. 4.0 Jun. 25, 1997 Description The Hitachi HM5116160 Series, HM 5118160 Series are CMOS dynamic RAMs organized as 1,048,576word X 16-bit. They employ the most advanced CMOS technology for high performance and low power.
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HM5116160
HM5118160
1048576-word
16-bit
ADE-203-634D
576word
16-bit.
42-pin
m5118160
m51161
S-024BB
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Untitled
Abstract: No abstract text available
Text: HM621100A Series 1048576-word x 1-bit High Speed CMOS Static RAM HITACHI Description The Hitachi HM621100A is a high speed 1M Static RAM organized as 1048576-word x 1-bit. It realizes high speed access time 20/25/35 ns and low power consumption, employing CMOS process technology and
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HM621100A
1048576-word
32-bit
HM621100A,
400-mil
28-pin
HM62110OA
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Untitled
Abstract: No abstract text available
Text: HM51W17800 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-664C Z Rev. 3.0 Feb. 24,1997 Description The Hitachi HM51W17800 is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17800 offers Fast
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HM51W17800
152-word
ADE-203-664C
28-pin
ns/60
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Untitled
Abstract: No abstract text available
Text: HM51W16165 Series HM51W18165 Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-650A Z Rev 1.0 Sep. 30, 1996 Description The Hitachi HM51W16165 Series and HM51W18165 Series are CMOS dynamic RAMs organized as 1,048,576-word X 16-bit. They employ the most advanced CMOS technology for high performance and
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HM51W16165
HM51W18165
1048576-word
16-bit
ADE-203-650A
576-word
16-bit.
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hitachi 28 pin plastic soj package dimensions
Abstract: No abstract text available
Text: HM51W17805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-631B Z Rev. 2.0 Nov. 12, 1996 Description The Hitachi HM51W17805 is a CMOS dynamic RAM, organized 2,097,152-words X 8-bits. It employs the most advanced CMOS technology for high performance and low power consumption. The HM51W17805
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HM51W17805
152-word
ADE-203-631B
152-words
28-pin
ns/60
hitachi 28 pin plastic soj package dimensions
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zua11
Abstract: No abstract text available
Text: HM62W8511H Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-750 Z Preliminary Rev. 0.0 Feb. 27,1997 Description The HM62W8511H is an asynchronous high-speed static RAM organized as 512-kword x 8-bit. It achieves high-speed access time (10/12/15 ns) through 0.35 )J.m CMOS process and high-speed circuit designing
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HM62W8511H
524288-word
ADE-203-750
512-kword
400-mil
36-pin
ns/12
ns/15
zua11
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Untitled
Abstract: No abstract text available
Text: HM62W16255H Series 262114-word x 16-bit High-Speed CMOS Static RAM HITACHI ADE-203-751 Z Preliminary Rev. 0.0 Feb. 27,1997 Description The HM62W16255H is an asynchronous high-speed static RAM, organized as 256-kword x 16 bits. It has realizes high-speed access time (10/12/15 ns) through the 0.35 |im CMOS process and high-speed circuit
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HM62W16255H
262114-word
16-bit
ADE-203-751
256-kword
400-mil,
44-pin
ns/12
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CBV2
Abstract: hitachi ic thyristor TT 570 N Reliability of Hitachi IC Memories
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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51W17805
Abstract: No abstract text available
Text: HM51W17805B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-462B Z Rev. 2.0 May. 30, 1996 Description The Hitachi HM51W17805B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805B offers
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HM51W17805B
152-word
ADE-203-462B
28-pin
ns/70
51W17805
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