HJFE Search Results

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

nec 151

Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.

NE425S01

Abstract: NE425S01-T1 NE425S01-T1B
Contextual Info: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz Noise Figure, NF dB

NE3505M04

Abstract: FL-240 NEC Ga FET marking L NE3505M04-T2 ne3505
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3505M04 L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz Reference Only

NE34018 equivalent

Abstract: FET model AN1022 AN1033 NE34018 Alpha 1000 GaAsFET as 15-f
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1033 NonLinear HJ-FET Model Verification in a PCS Amplifier PCS Amplifier Design Part 3 I. Introduction Lower development costs and shorter times to market of telecommunication subsystems require effective and

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

NE3508M04

Abstract: Power Transisitor 100V 2A NE3508M04-A NE3508M04-T2 NE3508M04-T2-A transisitor 02 p 67
Contextual Info: PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-mold M04 package (Pb-Free T. )

Contextual Info: 2SA1182 TOSHIBA 2 S A 1 1 82 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PCT PROCESS Unit in mm AU D IO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS + 0.5 SWITCHING APPLICATIONS • Excellent hpE Linearity : hFE( 2) = 25 (Min.)at V ce = —6V Ic = —400mA

max 16801 pspice

Abstract: 40J100
Contextual Info: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,

ne3514s02

Abstract: NE3514 NE3514S02-T1C s2p marking t1c rogers 5880 HS350 k-band amplifier
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS

NE3517S03

Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS

2tx transistor

Abstract: 2SC19 2SC1911 2SC1912 transistor 911 2SC191 VERO ELECTRONICS 2SC19H ic 748 ic 747
Contextual Info: SILICON NPN EPITAXIAL PLANAR TRANSISTOR r 2SC 2SC a » "J4 ft x * m INDUSTRIAL APPLICATIONS ° High Speed Switching Applications o Twin Typ« Translator fT*=6.5CH* typ O 10mA * * « # MAXIMUM R A T I N G S ( T a = 2 5iC) ^ C H A R A C T E R I S T I C SYMBOL RATING UNIT

NE3515S02

Abstract: transistor "micro-x" "marking" 3 NE3515S02-T1C-A ne3515 NE3515S02-T1D-A duroid 5880 RT DUROID 5880 X KU-BAND GAAS HS350 ir260
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA

UPG2118K

Abstract: mmic e3 NEC K 2500 Eastern power dissipation in power stage 20-PIN UPG2118K-E3 2118 QFN NEC
Contextual Info: NEC's 1.5W GaAs MMIC POWER AMPLIFIER UPG2118K FEATURES DESCRIPTION • E-MODE HJ-FET TECHNOLOGY NEC's UPG2118K is a 1.5W, 3 stage power amplifier developed primarily for DCS/PCS1800 applications. With modified external matching the UPG2118K can be tuned from 800 to 2500 MHz.

GRM39B

Abstract: 10-PIN GRM39CH TFL0816-2N7 TFL0816-3N3 NEC K 2124
Contextual Info: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG2124TH L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2124TH is GaAs MMIC for PA driver amplifier with variable gain function which were developed for WCDMA and another L-band application. The device can operate with 2.85 V, having the high gain and low distortion.

T6s MARKING

Contextual Info: GaAs HJ-FET INTEGRATED CIRCUIT PG2253T6S RF FRONT-END IC FOR BluetoothTM CLASS 1 DESCRIPTION The PG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX/Bypass switch and a power amplifier with low-pass filter. And this device has no RF matching parts.

Contextual Info: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz

6822 FET

Contextual Info: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power 1/3 Duty pulse operation with high linear

x 1535 ce

Abstract: 0537
Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The N E 651R 479A .is a 0.4 W G a A s HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high

NEC k 2134 transistor

Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
Contextual Info: PRELIMINARY DATA SHEET_ M F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm

NEC K 2500

Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz

AM/SSC 9500 ic data

Contextual Info: PRELIMINARY DATA SHEET IV IF f " / h ETERO JUNCTION FIELD EFFECT TRANSISTOR / NE428M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE428M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Contextual Info: HM5164165F Series HM5165165F Series 64M EDO DRAM 4-Mword x 16-bit 8k refresh/4k refresh HITACHI ADE-203-1058(Z) Preliminary Rev. 0.0 May. 25, 1999 Description The Hitachi HM5164165F Series, HM5165165F Series are 64M-bit dynamic RAMs organized as 4,194,304word x 16-bit. They have realized high performance and low power by employing CMOS process technology.