Untitled
Abstract: No abstract text available
Text: Data Sheet HL6376DG AIGaInP Laser Diode 642nm/65mW Features: Outline • Visible light output: 642nm Typ. Optical output power: 60mW CW Single transverse mode Low operating current: 125mA Typ. Low operating voltage: 2.7V Max. Operating temperature: +50°C
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HL6376DG
642nm/65mW
642nm
125mA
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HL6376DG
Abstract: No abstract text available
Text: HL6376DG ODE-208-064B Z Rev.2 Oct. 18, 2006 Low Operating Current Visible Laser Diode Description This HL6376DG is 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
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HL6376DG
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HL6376DG
HL6376DG:
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HL6376DG
Abstract: No abstract text available
Text: HL6376DG ODE2029-00 M Rev.0 Aug. 01, 2008 Low Operating Current Visible Laser Diode Description This HL6376DG is 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
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HL6376DG
HL6376DG
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Untitled
Abstract: No abstract text available
Text: HL6376DG ODE-208-064B Z Rev.2 Oct. 18, 2006 Low Operating Current Visible Laser Diode Description This HL6376DG is 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
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HL6376DG
ODE-208-064B
HL6376DG
HL6376DG:
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OCLARO
Abstract: No abstract text available
Text: Data Sheet HL6376DG AIGaInP Laser Diode Outline 642nm/65mW Features: • Visible light output: 642nm Typ. Optical output power: 60mW CW Single transverse mode Low operating current: 125mA Typ. Low operating voltage: 2.7V Max. Operating temperature: +50°C
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HL6376DG
642nm
125mA
642nm/65mW
HL6376DG
OCLARO
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Untitled
Abstract: No abstract text available
Text: HL6376DG ODE-208-064C Z Rev.3 Feb. 01, 2008 Low Operating Current Visible Laser Diode Description This HL6376DG is 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
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HL6376DG
ODE-208-064C
HL6376DG
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LD5033
Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet
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OPD-010908
LD5033
opnext
HL6366DG
opnext l
HL8340MG A
785nm
HL6545MG
660nm 100mw
HL8341MG
HL6313G
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HL6362MG
Abstract: HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG
Text: Oct. 2007 Guide for Red & Infrared Laser Diodes Line up Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and /or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a laser diode or collimated
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2008B
D-85622
HL6362MG
HL6355MG
hl6344g
HL6366DG
HL6750MG
HL6545MG
HL6348MG
opnext l
HL6354MG
HL8341MG
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