HLX6408 Search Results

HLX6408 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: MSS1Ô7E DDDlbDE 3TB • Advance Information HLX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 (im Process (Leff = 0.4 nm) • Read/Write Cycle Times <20 ns (Typical) <25 ns (-55 to 125°C)	OCR Scan	HLX6408 5x10srad 1x101 1x109	PDF
1A15 Abstract: honeywell hr 20 HLX6408 Contextual Info: Honeywell Advance Information 512K x 8 STATIC RAM—SOI HLX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 \|im Process (LeH= 0.4 \|im) • Read/Write Cycle Times < 20 ns (Typical) ¿25 ns (-55 to 125°C) • Total Dose Hardness through 5x105rad(Si02)	OCR Scan	5x105rad 1x101 HLX6408 1x109 40-Lead 1A15 honeywell hr 20 HLX6408	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: MSS1Ô7E DDDlbDE 3TB • Advance Information HLX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 (im Process (Leff = 0.4 nm) • Read/Write Cycle Times <20 ns (Typical) <25 ns (-55 to 125°C)

OCR Scan

HLX6408 5x10srad 1x101 1x109

PDF

1A15

Abstract: honeywell hr 20 HLX6408
Contextual Info: Honeywell Advance Information 512K x 8 STATIC RAM—SOI HLX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 |im Process (LeH= 0.4 |im) • Read/Write Cycle Times < 20 ns (Typical) ¿25 ns (-55 to 125°C) • Total Dose Hardness through 5x105rad(Si02)

OCR Scan

5x105rad 1x101 HLX6408 1x109 40-Lead 1A15 honeywell hr 20 HLX6408

PDF