HM511000JP Search Results

HB56A19B

Contextual Info: HB56A19 Series-1,048,576-words x 9 bits High Density Dynamic R A M Module The H B 5 6A 19 is a 1M x 9 dynamic R A M module, mounted 9 pieces of 1-Mbit D R A M HM511000JP sealed in SO J package. A n outline of the H B56A 19 is 30-pin single-in-line package having

Contextual Info: HB56A19A/AT/B-6H/7H/8A/10A/12A 1,048,576-Word x 9-Bit High Density Dynamic RAM Module P in N o . • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM HM511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types

Contextual Info: HB56A18 Series 1,048,576 words x 8 bits High Density Dynamic RAM Module The HB56A18 is a 1M x 8 dynamic RAM module, mounted 8 pieces of 1M-bit DRAM HM511000JP sealed in SO J package. An outline of the HB56A18 is 30-pin single-in-line package having two types; Lead type (HB56A18A) and Socket type (HB56A18B).

Contextual Info: HB56A18A/AT/B-6H/7H/8A/10A/12A 1,048,576-Word x 8-Bit High Density Dynamic RAM Module P in N o . The HB56A18 is a 1M x 8 dynamic RAM module, mounted eight 1-Mbit DRAM HM511000JP sealed in SOJ package. An outline of the HB56A18 is 30-pin single in-line package having Lead types

Contextual Info: HB56A18A/AT/B-6H/7H/8A/10A/12A 1,048,576-Word x 8-Bit High Density Dynamic RAM Module The HB56A18 is a 1M x 8 dynamic RAM module, mounted eight 1-Mbit DRAM HM511000JP sealed in SOJ package. An outline of the HB56A18 is 30-pin single in-line package having Lead types

HB56A19B

Abstract: HB56A19B8A zp 1401 HB56A19B10A SIMM 30-pin HB56A19A-12 HB56A19A-12A HB56A19
Contextual Info: HB56A19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM HM511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types (HB56A19A, HB56A19AT), Socket type

HM511000J

Contextual Info: HB56D136B/S Series 1,048,576-W ord x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B 5 6 D 1 3 6 B /S B /B R /S B R /B S /S B S is a 1M x 36 dy­ namic RAM module, mounted 8 pieces of 4 Mbit DRAM H M 514400JP/AJ sealed in S O J package and 4 pieces of

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

DATA SHEET OF IC 317

Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
Contextual Info: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,

Contextual Info: HITACHI/ LOGIC/ARRAYS/HEH S1E J> MM1bED3 DGlRlfib 577 IHIT2 HB56D136B/S Series-1,048,576-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56D136B/SB/BR/SBR/BS/SBS is a 1M x 36 dy­ namic RAM module, mounted 8 pieces of 4 Mbit DRAM

HM511000J

Contextual Info: • 44C,b2D3 nonni =i2s «hits HB56D236B S eries 2,097,152-Word x 36-Bit High Density Dynamic RAM Module ■ DESCRIPTION The HB56D236B is a 2M x 36 dynamic RAM module, mounted 16 pieces of 4 Mbit DRAM HM514400JP sealed in SOJ package and 8 pieces of 1 Mbit DRAM

Contextual Info: HITACHI/ LOGIC/ARRAYS/HEH M41t.E03 S1E 0011500 7b6 HB56D236B/SB Series-n r - 2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56D236B/SB/BS/SBS is a 2M x 36 dynamic RAM module, mounted 16 pieces of 4 Mbit DRAM

Contextual Info: HB56D136B Series 1,048,576-Word x 36-Bit High Density Dynamic RAM Module I • DESCRIPTION PIN OUT The HB56D136B is a 1M x 36 dynamic RAM module, mounted 8 pieces of 4 Mbit DRAM HM514400JP sealed in SOJ package and 4 pieces of 1 Mbit DRAM (HM511000AJP) sealed in SOJ package. An outline of the

free transistor equivalent book 2sc

Abstract: HA13108 HL7801G HL7801E free thyristor equivalent book 2sc 2SC1707 HIGH POWER HIGH FREQUENCY CVD DIAMOND CHIP RESISTORS footprint HD44237 semi catalog pic micro weighing scale code example
Contextual Info: RELIABILITY 1. 1.1 R E L IA B IL IT Y R E L IA B IL IT Y C H A R A C T E R IS T IC S F O R S E M IC O N D U C T O R D E V IC E S Hitachi semiconductor devices are designed, manufactured and inspected so as to achieve a high level of reliability. Accordingly, system reliability can be improved by com­

514400J

Abstract: 511000a
Contextual Info: HB56D236B-8/10/12-2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION PIN OUT T h e H B 56D 236B is a 2M x 36 dynam ic RA M module, mounted 16 pieces of 4M bit DR AM H M 514400JP sealed in SOJ package and 8 pieces of 1Mbit ORAM (HM 511000AJP) sealed in SOJ package. An

Contextual Info: HB56D136B-8/10/12 36-Bit DRAM 1,048,576-Word RAM Module x 36-Bit High Density Dynamic • PIN OUT ■ DESCRIPTION The HB56D136B is a 1M x 36 dynamic RAM module, mounted 6 pieces of 4Mbit DRAM HM514400JP sealed in SOJ package and 4 pieces of 1Mbit DRAM (HM511000AJP) sealed in SOJ package. An

514400j

Abstract: 236b 511000a
Contextual Info: HB56D236B Series 2,097,152-Word x 36-Bit High Density Dynamic RAM Module • PIN OUT ■ DESCRIPTION T h e H B56D 236B is a 2M x 36 dynam ic R AM m odule, m ounted 16 pieces o f 4 M bit DRAM H M 514400JP sealed in SOJ package and 8 pieces o f 1 M bit DRAM

101490

Abstract: P22n HM50464P-12 50464 ram
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY

HM511000AJP8

Abstract: HM511000-12 HM511000P10S HM511000A HM511000AJP-10 HM511000 HM511000P-12 HM511000P HM511000S 11000AP
Contextual Info: H M S 1 1000S Series H M S 1 1000A Series 1048576-word x 1-bit C M O S Dynamic R A M The Hitachi HM511000S/A series is a CMOS dynamic RAM organized 1048576-word x 1-bit. HM511000S/A has realized higher density, higher performance and various functions by employing 1.3 ^tm CMOS process technology and some new

HB56D136br

Contextual Info: HB56D136B/S Series-1,048,576-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B56D 136B /S B/B R /S BR /B S /S BS is a 1M x 36 dy­ namic RAM module, mounted 8 pieces of 4 Mbit DRAM HM514400JP/AJ sealed in SOJ package and 4 pieces of

HM511000

Abstract: dynamic ram 8 bit hm511000 HM511000P M511000 HM511000-12 HM511000-10 HM511000JP-12 DG 402 rp HM511000ZP-12 ir 2210 ic
Contextual Info: HM511000 Series 1048576-word x 1-bit CMOS Dynamic Random Access Memory The Hitachi HM511000 Series is a CMOS dynamic RAM organized 1,048,576-word x 1-bit. HM511000 has realized higher density, higher performance and various functions by employing 1.3/im CMOS process technology and some new CMOS circuit