HMF0330 Search Results

IC ATA 2388

Abstract: HMF0330 ATA 2388 harris 723 TIP 642 transistor
Contextual Info: H A R R IS MU S E M IC O N D U C T O R ~T 7 D E ~ j 4 3 G 2 afc.1 □□□OQDÌ □ | D HMF-0330 HIGH GAIN GaAs FET LOW CURRENT 3y _ 2—20 GHz 8 dB GAIN 25 mW PRODUCT DATA NOVEMBER 1987 HARRIS MICROWAVE SEMICONDUCTOR FEATURES DEVICE OUTLINE -r □ High G ain Under Low Current Conditions

Contextual Info: SAMSUNG ELECTRONICS INC 23 HARRIS tDE D • 7 S h i m S 0DllHb2 M83 H S M £ K HMF-03340 Gain Optimized Low Current GaAs FET 2-14 GHz PRODUCT DATA Features • Low Current Design Provides High dB/mA Performance * Chip Devices are Selected from Standard Military Grade Wafers

Contextual Info: HARRI S fili SEMI CONDUCTOR 3] HARRIS 4bE D • 43022^ DDDD2D1 2 ■ H M F-0 3 3 4 0 Gain Optimized Low Current GaAs FET 2-14 GHz PRODUCT DATA Features * Low Current Design Provides High dB/mA Performance * Chip Devices are Selected from Standard Military Grade Wafers

HMF-03300

Abstract: HMF0330 GAAS FET CROSS REFERENCE
Contextual Info: HARRIS MU S E M I C O N D U C T O R HARRIS PRODUCT DATA MbE D • 430221^ GGG0157 3 ■ HMS HMF-03300 Gain Optimized Low Current GaAs FET 2-20 GHz Features • Low Current Design Provides High ‘dB/mA’ Performance * Large Cross Section Ti/Pt/Au Gates

Contextual Info: SAMSUNG ELECTRONICS INC 2 j HARRIS PRODUCT DATA bOE D • 7^^4142 OGllflEb 442 ■ SMGK HMF-03300 Gain Optimized Low Current GaAs FET 2-20 GHz Features • Low Current Design Provides High ‘dB/mA’ Performance * Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability