HMF1200 Search Results

HMF-1200

Abstract: HMF12000-200 hmf-12
Contextual Info: g 1 HARRIS nu SE MIC ONDUCTOR j HARRIS ^bE » • 43G52b1 0D00221 a « H M S H M F -12020 -200 Power Optimized GaAs FET 2-12 GHz PRODUCT DATA Features • +27.5 dBm Output Power with 7 dB Associated Gain at 8 GHz * Chip Devices are Selected from Standard Military Grade Wafers

Contextual Info: SAMSUNG E LE C TR O N IC S IN C bGE ]> • 7Sbm 4E D G llfiM D HABRI8 HMF-12000 Û1E -1 0 0 -20 0 Power Optimized GaAs FET 2-16 GHz PRODUCT DATA Features • +27.5 dBm Output Power -200 with 7.5 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates

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Contextual Info: HARRIS Mül SEMICONDUCTOR r r HARRIS 4hE D 1 • HMS H3DSEbT D 0 0 01 7 3 HMF-12000 -100 -200 Power Optimized GaAs FET 2-16 GHz PRODUCT DATA Features • +27.5 dBm Output Power -200) with 7.5 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates

HMF-1200

Abstract: samsung 1622
Contextual Info: SAMSUNG ELECTRONICS INC h bGE ]> • 7 ^ 4 1 4 2 QQllfi? <104 * 8 H M F -12020 -200 Power Optimized GaAs FET 2-12 GHz PRODUCT DATA Features • +27.5 dBm Output Power with 7 dB Associated Gain at 8 GHz Chip Devices are Selected from Standard Military Grade Wafers

HMF-1200

Abstract: HMF1200 high power FET transistor s-parameters hmf-1202
Contextual Info: T? DE MBOSEb-ì 0000031 3 97D 00031 D T - 3 1'SS H A R R I S MüJ SEMI CONDUCTOR 4 3 0 2 2 6 9 H A R R I S MW S EMI CONDUCT OR r HMF-1200 POWER GaAs FET |~ 2—16 GHz 500 mW 7.5 dB Gain PRODUCT DATA NOVEMBER 1987 HARRIS MICROWAVE SEMICONDUCTOR FEATURES DEVICE OUTLINE

HMF-1200

Abstract: M/SMF-12030-200
Contextual Info: HARRIS MU S E M I C O N D U C T O R 2J HARRIS 4bE D • 4302211=1 D D 0 0 2 2 5 S ■ HM S H M F -12030°° Power Optimized GaAs FET 2-10 GHz PRODUCT DATA Features * +27.5 dBm Output Power with 7 dB Associated Gain at 8 GHz * Chip Devices are Selected from