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    Toshiba America Electronic Components HN1A01FE-GR,LXHF

    AUTO AEC-Q PNP + PNP TR VCEO:-50
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    Toshiba America Electronic Components HN1A01FE-Y,LF

    TRANS 2PNP 50V 0.15A ES6
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    Toshiba America Electronic Components HN1A01FU-Y,LXHF

    AUTO AEC-Q PNP + PNP TR VCEO:-50
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    Toshiba America Electronic Components HN1A01FE-GR,LF

    TRANS 2PNP 50V 0.15A ES6
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    Toshiba America Electronic Components HN1A01FU-GR,LF

    TRANS 2PNP 50V 0.15A US6-PLN
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    HN1A01F Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN1A01F Toshiba Silicon PNP Epitaxial Type (PCT Process) Transistor Original PDF
    HN1A01F Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    HN1A01F Toshiba PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) Scan PDF
    HN1A01FE Toshiba TRANS GP BJT PNP 50V 0.15A 6ES6 Original PDF
    HN1A01FEGR Toshiba TRANS GP BJT PNP 50V 0.15A 6ES6 Original PDF
    HN1A01FE-GR,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2PNP 50V 0.15A ES6 Original PDF
    HN1A01FE-GR(5L,F,T Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN DUAL PNP -50V -0.15A ES6 Original PDF
    HN1A01FE-GR,LXHF Toshiba America Electronic Components AUTO AEC-Q PNP + PNP TR VCEO:-50 Original PDF
    HN1A01FEY Toshiba TRANS GP BJT PNP 50V 0.15A 6ES6 Original PDF
    HN1A01FE-Y,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2PNP 50V 0.15A ES6 Original PDF
    HN1A01FE-Y,LXHF Toshiba America Electronic Components AUTO AEC-Q PNP + PNP TR VCEO:-50 Original PDF
    HN1A01FE-Y(T5L,F,T Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN DUAL PNP -50V -0.15A ES6 Original PDF
    HN1A01FGRTE85L Toshiba HN1A01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1A01F-GR(TE85L,F Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN DUAL PNP -50V -0.15A SM6 Original PDF
    HN1A01FGRTE85N Toshiba HN1A01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1A01FGRTE85R Toshiba HN1A01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1A01FTE85L Toshiba HN1A01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1A01FTE85N Toshiba HN1A01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1A01FTE85R Toshiba HN1A01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1A01FU Toshiba PNP Monolithic Transistor Pair Original PDF

    HN1A01F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FE Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = −50V, IC = −150mA (max) z High hFE: hFE = 120 to 400


    Original
    PDF HN1A01FE 150mA

    HN1A01FE

    Abstract: No abstract text available
    Text: HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FE Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = −50V, IC = −150mA (max) z High hFE: hFE = 120~400


    Original
    PDF HN1A01FE -150mA HN1A01FE

    HN1A01F

    Abstract: No abstract text available
    Text: HN1A01F シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ HN1A01F ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 z z z z z 単位: mm スーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。


    Original
    PDF HN1A01F 150mA 100mA, HN1A01F

    Untitled

    Abstract: No abstract text available
    Text: HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FU Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO =−50V, IC =−150mA (max) z High hFE: hFE = 120 to 400


    Original
    PDF HN1A01FU 150mA

    HN1A01F

    Abstract: No abstract text available
    Text: HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = −50 V, IC = −150 mA (max) High hFE: hFE = 120~400


    Original
    PDF HN1A01F HN1A01F

    Untitled

    Abstract: No abstract text available
    Text: HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = −50 V, IC = −150 mA (max) z High hFE: hFE = 120 to 400


    Original
    PDF HN1A01F

    HN1A01F

    Abstract: No abstract text available
    Text: HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = −50 V, IC = −150 mA (max) z High hFE: hFE = 120~400


    Original
    PDF HN1A01F HN1A01F

    HN1A01FE

    Abstract: No abstract text available
    Text: HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FE Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = −50V, IC = −150mA (max) z High hFE: hFE = 120~400


    Original
    PDF HN1A01FE -150mA HN1A01FE

    HN1A01FU

    Abstract: No abstract text available
    Text: HN1A01FU シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ HN1A01FU ○ 低周波増幅用 z z z z z 単位: mm ウルトラスーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。 高耐圧です。 : VCEO = -50V


    Original
    PDF HN1A01FU 150mA 100mA, HN1A01FU

    HN1A01F

    Abstract: No abstract text available
    Text: HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = −50 V, IC = −150 mA (max) z High hFE: hFE = 120~400


    Original
    PDF HN1A01F HN1A01F

    HN1A01FU

    Abstract: No abstract text available
    Text: HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FU Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO =−50V, IC =−150mA (max) z High hFE: hFE = 120~400


    Original
    PDF HN1A01FU -150mA HN1A01FU

    HN1A01FU

    Abstract: No abstract text available
    Text: HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FU Unit: mm Audio Frequency General Purpose Amplifier Applications l Small package (Dual type) l High voltage and high current : VCEO =−50V, IC =−150mA (max) l High hFE: hFE = 120~400


    Original
    PDF HN1A01FU -150mA HN1A01FU

    HN1A01FE

    Abstract: No abstract text available
    Text: HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FE Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = −50V, IC = −150mA (max) High hFE: hFE = 120~400


    Original
    PDF HN1A01FE -150mA HN1A01FE

    HN1A01FU

    Abstract: No abstract text available
    Text: HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FU Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO =−50V, IC =−150mA (max) z High hFE: hFE = 120~400


    Original
    PDF HN1A01FU -150mA HN1A01FU

    HN1A01FE

    Abstract: No abstract text available
    Text: HN1A01FE 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 HN1A01FE ○ 低周波増幅用 単位: mm z エクストリームスーパーミニ (6 端子) パッケージに 2 素子を内蔵してい ます。 z 高耐圧です。


    Original
    PDF HN1A01FE -150mA -10mA HN1A01FE

    HN1A01FU

    Abstract: No abstract text available
    Text: HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FU Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO =−50V, IC =−150mA (max) High hFE: hFE = 120~400


    Original
    PDF HN1A01FU -150mA HN1A01FU

    HN1A01F

    Abstract: No abstract text available
    Text: HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01F Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = −50V, IC = −150mA (max) High hFE: hFE = 120~400


    Original
    PDF HN1A01F -150mA HN1A01F

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE HN1A01F U nit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER + 0.2 2.8 -0 .3 APPLICATIONS. + 0.2 1 . 6 - 0.1 • Small Package Dual Type -s • High Voltage and High Current : VCEO= -50V , I q = —150mA (MAX.) &• -EE 2 -E3-


    OCR Scan
    PDF HN1A01F --150mA

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A H N 1A 0 1F TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HN1A01F A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • Small Package (Dual Type) • High Voltage and High Current : VC E0= —50V, le = - 150mA (MAX.)


    OCR Scan
    PDF HN1A01F 150mA 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1A01F TO SHIBA TRANSISTOR n1 F SILICON PNP EPITAXIAL TYPE PCT PROCESS H N 1A Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • Small Package (Dual Type) • High Voltage and High Current : V c E O = -5 0 V , I c = -150m A (MAX.)


    OCR Scan
    PDF HN1A01F -150m 961001EAA2'

    HN1A01F

    Abstract: No abstract text available
    Text: TOSHIBA HN1A01F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HN 1A 0 1 F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER + 0.2 2.8-0.3 APPLICATIONS. + 0.2 1 . 6 - 0.1 • Small Package (Dual Type) • High Voltage and High Current : VcEO = - 50V, I c = - 150mA(MAX.)


    OCR Scan
    PDF HN1A01F 150mA 961001EAA2' HN1A01F

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE HN1A01FU U nit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 1 .2510.1 . • Small Package Dual Type • High Voltage and High Current : V c e O = -5 0 V , Ic = - 150mA (MAX.) • High hpE : hpE = 120—400 • Excellent hjrj; Linearity


    OCR Scan
    PDF HN1A01FU 150mA -100eC

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1A01FU TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HN1 AÍ11FII U nit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2.1 ± 0.1 1.25 ±0.1 • Small Package (Dual Type) P 3 - £ s • High Voltage and High C urrent


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    PDF HN1A01FU 11FII --150mA 961001EAA2'

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


    OCR Scan
    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737