HN1C01F Search Results
HN1C01F Price and Stock
Toshiba America Electronic Components HN1C01FU-GR,LXHFTRANS 2NPN DUAL 50V 150MA US6 |
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HN1C01FU-GR,LXHF | Reel | 6,000 | 3,000 |
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HN1C01FU-GR,LXHF | Reel | 36 Weeks | 3,000 |
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HN1C01FU-GR,LXHF | 5,700 |
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HN1C01FU-GR,LXHF | Reel | 3,000 |
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Toshiba America Electronic Components HN1C01FE-Y,LXHFTRANS 2NPN DUAL 50V 150MA ES6 |
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HN1C01FE-Y,LXHF | Reel | 4,000 | 4,000 |
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HN1C01FE-Y,LXHF | Reel | 36 Weeks | 4,000 |
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HN1C01FE-Y,LXHF | 8,000 |
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HN1C01FE-Y,LXHF | Reel | 4,000 |
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Toshiba America Electronic Components HN1C01FE-GR,LXHFTRANS 2NPN DUAL 50V 150MA ES6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HN1C01FE-GR,LXHF | Reel | 4,000 | 4,000 |
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HN1C01FE-GR,LXHF | Reel | 36 Weeks | 4,000 |
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HN1C01FE-GR,LXHF | 7,932 |
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HN1C01FE-GR,LXHF | Reel | 4,000 |
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Toshiba America Electronic Components HN1C01FU-GR,LFTRANS 2NPN DUAL 50V 150MA US6 |
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HN1C01FU-GR,LF | Cut Tape | 3,023 | 1 |
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HN1C01FU-GR,LF | Reel | 16 Weeks | 3,000 |
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HN1C01FU-GR,LF | 9,255 |
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Toshiba America Electronic Components HN1C01FU-Y,LXHFTRANS 2NPN DUAL 50V 150MA US6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HN1C01FU-Y,LXHF | Reel | 3,000 | 3,000 |
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HN1C01FU-Y,LXHF | Reel | 36 Weeks | 3,000 |
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HN1C01FU-Y,LXHF | 5,772 |
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HN1C01FU-Y,LXHF | Reel | 3,000 |
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HN1C01F Datasheets (53)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| HN1C01F |
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NPN Multi-Chip Composite Transistor Pair | Original | 190.54KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01F |
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Japanese - Transistors | Original | 366.19KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01F | Unknown | The Transistor Manual (Japanese) 1993 | Scan | 86.16KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01FE |
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Transistor Silicon NPN Epitaxial Type (PCT Process) | Original | 181.87KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01FEGR |
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TRANS GP BJT NPN 50V 50A 6(2-2N1G) | Original | 181.88KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01FE-GR,LF |
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2NPN 50V 0.15A ES6 | Original | 210.29KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01FE-GR(5L,F,T |
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Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN DUAL NPN 50V 0.15A ES6 | Original | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01FE-GR,LXHF |
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AUTO AEC-Q NPN + NPN TR VCEO:50V | Original | 215.58KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01FE-Y,LF |
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2NPN 50V 0.15A ES6 | Original | 210.29KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01FE-Y,LXHF |
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AUTO AEC-Q NPN + NPN TR VCEO:50V | Original | 215.58KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01FE-Y(T5L,F,T |
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Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN DUAL NPN 50V 0.15A ES6 | Original | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01FGRTE85L |
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HN1C01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | Original | 237.67KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01F-GR(TE85L,F |
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2NPN 50V 0.15A SM6 | Original | 224.35KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01F-GRTE85LF |
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HN1C01F - Trans GP BJT NPN 50V 0.15A 6-Pin SM T/R | Original | 237.67KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| HN1C01F-GR(TE85L,F) |
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Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRANS NPN 50V 150MA SM6 | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01FGRTE85N |
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HN1C01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | Original | 237.67KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01FGRTE85R |
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HN1C01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | Original | 237.67KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01F(T5L:T) |
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TRANS GP BJT NPN 50V 0.15A 6(2-3N1A) T/R | Original | 206.6KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01F(TE85L) |
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TRANS GP BJT NPN 50V 0.15A 6(2-3N1A) | Original | 206.6KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01FTE85L |
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HN1C01 - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal | Original | 237.67KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1C01F Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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HN1C01FContextual Info: HN1C01F シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ HN1C01F ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 z z z z z 単位: mm スーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。 |
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HN1C01F 150mA 100mA, HN1C01F | |
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Contextual Info: HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FE Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120 to 400 |
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HN1C01FE 150mA | |
HN1C01FContextual Info: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio Frequency General Purpose Amplifier Applications l Small package (Dual type) l High voltage and high current : VCEO = 50V, IC = 150mA (max) l High hFE : hFE = 120~400 |
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HN1C01F 150mA HN1C01F | |
HN1C01FContextual Info: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = 50 V, IC = 150 mA (max) z High hFE : hFE = 120~400 |
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HN1C01F HN1C01F | |
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Contextual Info: SILICON NPN EPITAXIAL TYPE HN1C01FU U nit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • Small Package Dual Type • High Voltage and High Current : Vc e O ~ 50V, 10 = 150mA (MAX.) • High hpE : hpE = 120~400 • Excellent hpE Linearity |
OCR Scan |
HN1C01FU 150mA | |
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Contextual Info: HN1C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FU Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120 to 400 |
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HN1C01FU 150mA | |
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Contextual Info: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = 50 V, IC = 150 mA (max) z High hFE : hFE = 120 to 400 |
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HN1C01F | |
HN1C01FContextual Info: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = 50 V, IC = 150 mA (max) High hFE : hFE = 120~400 Excellent hFE linearity |
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HN1C01F HN1C01F | |
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Contextual Info: TOSHIBA HN1C01 FU T O S H IB A T R A N SISTO R SILICO N NPN E P ITA X IA L TYPE PCT PROCESS HN1C01FU Unit in mm A U D IO FR E Q U E N C Y G ENERAL PURPOSE A M P L IFIE R A P P L IC A T IO N S . 2 . 1± 0.1 1.25 ±0.1 1— D6 11 IT L_L 2 S 9 '0 M A X IM U M |
OCR Scan |
HN1C01 HN1C01FU 150mA | |
UX1000Contextual Info: TOSHIBA HN1C01FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS H N 1 r fl 1 F 11 u u u m Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2 . 1± 0.1 1.2 5 ±0.1 • Small Package (Dual Type) n 6 • High Voltage and High Current |
OCR Scan |
HN1C01FU 150mA 961001EAA2' UX1000 | |
marking N1C
Abstract: TRANSISTOR MARKING TE US6 "MARKING TE" US6 D9ED N1C TRANSISTOR HN1C01FU ed general semiconductor
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OCR Scan |
HN1C01FU 150mA 961001EAA2' marking N1C TRANSISTOR MARKING TE US6 "MARKING TE" US6 D9ED N1C TRANSISTOR HN1C01FU ed general semiconductor | |
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Contextual Info: HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FE Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity |
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HN1C01FE 150mA | |
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Contextual Info: TOSHIBA HN1C01F TOSHIBA TRANSISTOR h SILICON NPN EPITAXIAL TYPE PCT PROCESS N1 r n1 F Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • Small Package (Dual Type) High Voltage and High Current : V(}EO = 50V, Ic = 150mA (Max.) |
OCR Scan |
HN1C01F 150mA 61001EA | |
HN1C01FUContextual Info: HN1C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FU Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 |
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HN1C01FU 150mA HN1C01FU | |
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Contextual Info: SILICON NPN EPITAXIAL TYPE HN1C01F U nit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • Small Package Dual Type High Voltage and High Current : V q ]jo = 50V, I q = 150mA (Max.) High hjrE : hpg = 120—400 Excellent hpE Linearity |
OCR Scan |
HN1C01F 150mA 100mA, | |
HN1C01FUContextual Info: HN1C01FU シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ HN1C01FU ○ 低周波増幅用 z z z z z 単位: mm ウルトラスーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。 高耐圧です。 : VCEO = 50V |
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HN1C01FU 150mA 100mA, HN1C01FU | |
HN1C01FEContextual Info: HN1C01FE 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 HN1C01FE ○ 低周波増幅用 単位: mm z エクストリームスーパーミニ (6 端子) パッケージに 2 素子を内蔵してい ます。 z 高耐圧です。 |
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HN1C01FE 150mA HN1C01FE | |
HN1C01FEContextual Info: HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FE Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 |
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HN1C01FE 150mA HN1C01FE | |
HN1C01FUContextual Info: HN1C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FU Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity |
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HN1C01FU 150mA HN1C01FU | |
HN1C01FContextual Info: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity |
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HN1C01F 150mA HN1C01F | |
HN1C01FUContextual Info: HN1C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FU Unit: mm Audio Frequency General Purpose Amplifier Applications l Small package (Dual type) l High voltage and high current : VCEO = 50V, IC = 150mA (max) l High hFE : hFE = 120~400 |
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HN1C01FU 150mA HN1C01FU | |
HN1C01FEContextual Info: HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FE Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity |
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HN1C01FE 150mA HN1C01FE | |
HN1C01FContextual Info: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = 50 V, IC = 150 mA (max) z High hFE : hFE = 120~400 |
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HN1C01F HN1C01F | |
HN1C01FEContextual Info: HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FE Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 |
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HN1C01FE 150mA HN1C01FE | |