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    HN1D01F Price and Stock

    Toshiba America Electronic Components HN1D01FU,LF(T

    DIODE ARRAY GP 80V 100MA US6
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    DigiKey HN1D01FU,LF(T Cut Tape 3,107 1
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    HN1D01FU,LF(T Digi-Reel 3,107 1
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    HN1D01FU,LF(T Reel 3,000
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    Avnet Americas HN1D01FU,LF(T Reel 20 Weeks 3,000
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    Mouser Electronics HN1D01FU,LF(T
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    Toshiba America Electronic Components HN1D01F(TE85L,F)

    DIODE ARRAY GP 80V 100MA SM6
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    DigiKey HN1D01F(TE85L,F) Reel 3,000 3,000
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    HN1D01F(TE85L,F) Digi-Reel 1
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    HN1D01F(TE85L,F) Cut Tape 1
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    Mouser Electronics HN1D01F(TE85L,F) 8,868
    • 1 $0.35
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    Toshiba America Electronic Components HN1D01FE(TE85L,F)

    DIODE ARRAY GP 80V 100MA ES6
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    DigiKey HN1D01FE(TE85L,F) Cut Tape 153 1
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    HN1D01FE(TE85L,F) Reel 4,000
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    HN1D01FE(TE85L,F) Digi-Reel 1
    • 1 $0.38
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    Mouser Electronics HN1D01FE(TE85L,F)
    • 1 $0.32
    • 10 $0.208
    • 100 $0.136
    • 1000 $0.134
    • 10000 $0.056
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    EBV Elektronik HN1D01FE(TE85L,F) 13 Weeks 4,000
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    Toshiba America Electronic Components HN1D01FU(T5L,F,T)

    Small Signal Switching Diodes 85V Vrm 80VR 300mA 2A IFSM 0.92V VF
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    Mouser Electronics HN1D01FU(T5L,F,T)
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    Toshiba America Electronic Components HN1D01FU,LF(B

    HN1D01FU,LF(B
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    Verical HN1D01FU,LF(B 1,300 329
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    Quest Components HN1D01FU,LF(B 1,040
    • 1 $0.86
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    • 100 $0.387
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    Find more HN1D01F price and stock on Findchips.com

    HN1D01F Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN1D01F Toshiba Common Anode Diode Array Original PDF
    HN1D01F Toshiba DIODE Scan PDF
    HN1D01FE Toshiba Original PDF
    HN1D01FE(TE85L,F) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CA 6 ES6 Original PDF
    HN1D01F(TE85L,F) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CA 6 SM6 Original PDF
    HN1D01FU Toshiba Diode, Ultra High Speed Switching Application Original PDF
    HN1D01FU Toshiba Japanese - Diodes Original PDF
    HN1D01FU Toshiba Diodes Original PDF
    HN1D01FU Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    HN1D01FU Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) Scan PDF
    HN1D01FU,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 80V 100MA US6 Original PDF
    HN1D01FU,LF(T Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 80V 100MA US6 Original PDF
    HN1D01FU(T5L,F,T) Toshiba HN1D01FU - Diode Switching 85V 0.3A 6-Pin US T/R Original PDF

    HN1D01F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF 3 = 0.92 V (typ.) z Fast reverse recovery time: trr = 1.6 ns (typ.) z Small total capacitance: CT = 2.2 pF (typ.)


    Original     		PDF HN1D01FU

    HN1D01F

    Abstract: No abstract text available
    Text: HN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra-High-Speed Switching Applications Unit: mm z Small package z Low forward voltage : VF 3 = 0.92 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 2.2 pF (typ.)


    Original     		PDF HN1D01F HN1D01F

    Untitled

    Abstract: No abstract text available
    Text: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance


    Original     		PDF HN1D01FE HN1D02FU

    HN1D01FU

    Abstract: No abstract text available
    Text: HN1D01FU 東芝ダイオード シリコンエピタキシャルプレーナ形ダイオード HN1D01FU ○ 超高速スイッチング用 単位: mm z ウルトラスーパーミニ 6 端子 パッケージにアノードコモンを 2 ユニッ トを内蔵しています。


    Original     		PDF HN1D01FU 100mA HN1D01FU

    HN1D01F

    Abstract: 030619EAA
    Text: HN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra-High-Speed Switching Applications Unit: mm Small package Low forward voltage : VF 3 = 0.92 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 2.2 pF (typ.)


    Original     		PDF HN1D01F HN1D01F 030619EAA

    HN1D01F

    Abstract: No abstract text available
    Text: HN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra-High-Speed Switching Applications Unit: mm z Small package z Low forward voltage : VF 3 = 0.92 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 2.2 pF (typ.)


    Original     		PDF HN1D01F HN1D01F

    HN1D01FE

    Abstract: No abstract text available
    Text: HN1D01FE 東芝ダイオード シリコンエピタキシャルプレーナ形ダイオード HN1D01FE ○ 超高速スイッチング用 単位: mm z エクストリームスーパーミニ 6 端子 パッケージにアノードコモンを 2 ユニットを内蔵しています。


    Original     		PDF HN1D01FE 100mA HN1D01FE

    HN1D01FU

    Abstract: No abstract text available
    Text: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit in mm z Small package z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.)


    Original     		PDF HN1D01FU HN1D01FU

    HN1D01F

    Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE
    Text: HN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra High Speed Switching Application Unit in mm Small package Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)


    Original     		PDF HN1D01F HN1D01F TOSHIBA "ULTRA HIGH SPEED" DIODE

    Untitled

    Abstract: No abstract text available
    Text: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN1D01FE HN1D02FU

    HN1D01FE

    Abstract: HN1D02FU
    Text: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance


    Original     		PDF HN1D01FE HN1D02FU HN1D01FE

    Untitled

    Abstract: No abstract text available
    Text: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit in mm Small package Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)


    Original     		PDF HN1D01FU

    HN1D01FU

    Abstract: No abstract text available
    Text: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit in mm z Small package z Low forward voltage: VF 3 = 0.92 V (typ.) z Fast reverse recovery time: trr = 1.6 ns (typ.) z Small total capacitance: CT = 2.2 pF (typ.)


    Original     		PDF HN1D01FU HN1D01FU

    HN1D01F

    Abstract: No abstract text available
    Text: HN1D01F 東芝ダイオード シリコンエピタキシャルプレーナ形ダイオード HN1D01F ○ 超高速スイッチング用 z z z z 単位: mm アノードコモンを 2 ユニットを内蔵 順方向特性が良い。 : VF 3 = 0.92V (標準)


    Original     		PDF HN1D01F 100mA HN1D01F

    4558 dd

    Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN
    Text: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300


    OCR Scan     		PDF 1SS308 1SS181 1SS309 1SS184 HN1D01F HN1D01FU HN1D02F HN1D02FU 1SS184X2 4558 dd 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN

    Untitled

    Abstract: No abstract text available
    Text: S IL IC O N E P IT A X IA L P L A N A R T Y P E HN1D01FU ULTRA HIGH SPEED SW ITCHING APPLICATIO N. Unit in mm • Small Package • Low Forward Voltage • F ast Reverse Recovery Time : • Small Total Capacitance : Vp 3 = 0.92 V (Typ.) 1^ = 1.6ns (Typ.)


    OCR Scan     		PDF HN1D01FU

    diode n1d

    Abstract: HN1D01FU
    Text: TOSHIBA HN1D01FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SW ITCHING APPLICATION. • • • • Unit in mm Small Package Low Forward Voltage : Vjr 3 = 0.92V (Typ.) Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance


    OCR Scan     		PDF HN1D01FU 961001EAA2' diode n1d HN1D01FU

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1D01FU TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SW ITCHING APPLICATIO N. • • • • Unit in mm Small Package Low Forward Voltage : Vjr 3 = 0.92V (Typ.) Fast Reverse Recovery Time : trr = 1.6ns (Typ.) Small Total Capacitance


    OCR Scan     		PDF HN1D01FU

    HN1D01F

    Abstract: cd3m
    Text: TOSHIBA HN1D01F T O S H IB A D IO D E SILICON EPIT A X IA L PLA N A R TYPE HN1D01F Unit in mm U LTRA HIGH SPEED SW IT C H IN G A PPLIC A TIO N . • • • • Small Package Low Forward Voltage : V f 3 = 0.92V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.)


    OCR Scan     		PDF HN1D01F HN1D01F cd3m

    Untitled

    Abstract: No abstract text available
    Text: HN1D01FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Unit in mm Small Package Low Forward Voltage : Vjr 3 = 0.92V (Typ.) Fast Reverse RecoveryTime : trr = 1.6ns (Typ.) Small Total Capacitance


    OCR Scan     		PDF HN1D01FU 961001EAA2'

    m1261

    Abstract: m 1261 HN1D01F
    Text: SILICON EPITAXIAL PLANAR TYPE HN1D01F ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in m m h 0.2 -0 .3 . Small Package + 0.2 1 .6 - 0.1 . Low Forward Voltage : Vp=0.92V Typ. . Fast Reverse Recovery Time : trr= l .6 n s ( T y p .) . Small Total Capacitance


    OCR Scan     		PDF HN1D01F 100mA m1261 m 1261 HN1D01F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HNinniF ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm + • Small Package • Low Forward Voltage • Fast Reverse RecoveryTime : • Small Total Capacitance 2 .8 + : Vp 3 = 0.92V (Typ.) 1. 6


    OCR Scan     		PDF HN1D01F

    e50e

    Abstract: HN1D01FU MARKING TE US6
    Text: TOSHIBA HN1D01FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • Small Package • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. • Small Total Capacitance : Vp (3) = 0.92V (Typ.)


    OCR Scan     		PDF HN1D01FU N1D01 961001EAA2' e50e HN1D01FU MARKING TE US6

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA HN1D01F T O S H IB A D IO D E SILICON EPIT A X IA L PLA N A R TYPE HN1D01F U LTRA HIGH SPEED SW IT C H IN G A PPLIC A T IO N . U nit in mm + 0.2 • Small Package • Low Forward Voltage VF 3 = 0.92V (Typ.) • Fast Reverse Recovery Time trr= 1.6ns (Typ.)


    OCR Scan     		PDF HN1D01F