HN1D02F Search Results

HN1D02F Price and Stock

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Toshiba America Electronic Components HN1D02FU,LF DIODE ARRAY GP 80V 100MA US6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	HN1D02FU,LF	Cut Tape	8,590		1	1 $0.3 10 $0.195 100 $0.1059 1000 $0.08766 10000 $0.08766	Buy Now
	HN1D02FU,LF	Digi-Reel	8,590		1	1 $0.3 10 $0.195 100 $0.1059 1000 $0.08766 10000 $0.08766	Buy Now
	HN1D02FU,LF	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.05099	Buy Now
Avnet Americas	HN1D02FU,LF	Reel		20 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.0468	Buy Now
Mouser Electronics	HN1D02FU,LF		2,459			1 $0.3 10 $0.195 100 $0.09 1000 $0.081 10000 $0.05	Buy Now
Quest Components	HN1D02FU,LF		2,400			1 $0.36 10 $0.36 100 $0.108 1000 $0.072 10000 $0.072	Buy Now
Toshiba America Electronic Components HN1D02FU(T5L,F,T) DIODE ARRAY GP 80V 100MA ES6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	HN1D02FU(T5L,F,T)	Cut Tape	8		1	1 $0.38 10 $0.38 100 $0.38 1000 $0.38 10000 $0.38	Buy Now
	HN1D02FU(T5L,F,T)	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	HN1D02FU(T5L,F,T)	Digi-Reel			1	1 $0.39 10 $0.39 100 $0.39 1000 $0.39 10000 $0.39	Buy Now
Toshiba America Electronic Components HN1D02F(TE85L,F) DIODE ARRAY GP 80V 100MA SM6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	HN1D02F(TE85L,F)	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.05596	Buy Now
	HN1D02F(TE85L,F)	Cut Tape			1	1 $0.41 10 $0.261 100 $0.1483 1000 $0.09795 10000 $0.09795	Buy Now
	HN1D02F(TE85L,F)	Digi-Reel			1	1 $0.41 10 $0.261 100 $0.1483 1000 $0.09795 10000 $0.09795	Buy Now
Mouser Electronics	HN1D02F(TE85L,F)		7,907			1 $0.41 10 $0.275 100 $0.156 1000 $0.098 10000 $0.053	Buy Now
Toshiba America Electronic Components HN1D02FE,LF Small Signal Switching Diodes Switching diode, 80V ES6 0.1A High Speed
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	HN1D02FE,LF		3,000			1 $0.38 10 $0.228 100 $0.144 1000 $0.095 10000 $0.061	Buy Now
Toshiba America Electronic Components HN1D02FU,LF(B HN1D02FU,LF(B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	HN1D02FU,LF(B		2,850		863	1 - 10 - 100 - 1000 $0.0848 10000 $0.0823	Buy Now
Quest Components	HN1D02FU,LF(B		2,280			1 $0.48 10 $0.48 100 $0.216 1000 $0.144 10000 $0.144	Buy Now

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HN1D02F Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
HN1D02F	Toshiba	Common Cathode Diode Array	Original	PDF
HN1D02F	Toshiba	Japanese - Diodes	Original	PDF
HN1D02F	Toshiba	DIODE	Scan	PDF
HN1D02FE	Toshiba	Quad Silicon Epitaxial Planar Diode	Original	PDF
HN1D02FE,LF	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CC 6 ES6	Original	PDF
HN1D02F(TE85L,F)	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CC 6 SM6	Original	PDF
HN1D02FU	Toshiba	Common Cathode Diode Array	Original	PDF
HN1D02FU	Toshiba	Japanese - Diodes	Original	PDF
HN1D02FU	Unknown	Silicon Diode	Scan	PDF
HN1D02FU	Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF
HN1D02FU	Toshiba	DIODE	Scan	PDF
HN1D02FU,LF	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 80V 100MA US6	Original	PDF
HN1D02FU(T5L,F,T)	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CC 6 US6	Original	PDF

HN1D02F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SILICON EPITAXIAL PLANAR TYPE HN1D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Unit in mm HN1D02FU is composed of2 unit of cathode common. Low Forward Voltage : Vp 3 = 0.90V (Typ.) Fast Reverse Recovery Time : trr = 1.6ns (Typ.) Small Total Capacitance	OCR Scan	HN1D02FU HN1D02FU HN1D02FU-	PDF
4558 dd Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN Contextual Info: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300	OCR Scan	1SS308 1SS181 1SS309 1SS184 HN1D01F HN1D01FU HN1D02F HN1D02FU 1SS184X2 4558 dd 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN	PDF
Contextual Info: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit: mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)	Original	HN1D02FU HN1D02FU	PDF
HN1D02FU Contextual Info: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)	Original	HN1D02FU HN1D02FU	PDF
HN1D02FE Abstract: HN1D02FU Contextual Info: HN1D02FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application Unit in mm z The HN1D02FU is composed of 2 common cathode units. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)	Original	HN1D02FE HN1D02FU HN1D02FE	PDF
HN1D02FE Abstract: HN1D02FU Contextual Info: HN1D02FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application Unit in mm z The HN1D02FU is composed of 2 common cathode units. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)	Original	HN1D02FE HN1D02FU HN1D02FE	PDF
Contextual Info: TOSHIBA HN1D02F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D02F Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN1D02F is composed of 2 unit of cathode common. Low Forward Voltage : Vp 3 = 0.90V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.)	OCR Scan	HN1D02F 961001EAA2'	PDF
Contextual Info: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance	Original	HN1D01FE HN1D02FU	PDF
Contextual Info: TOSHIBA HN1D02F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h N1 n ni F m m m 'm m mmr w • ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.2 • HN1D02F is composed of 2 u n it of cathode common. Z.0-0.3 • Low Forward Voltage : V f 3 —0.90V (Typ.)	OCR Scan	HN1D02F HN1D02F 961001EAA2'	PDF
Contextual Info: TOSHIBA HN1D02F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D02F Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN1D02F is composed of 2 unit of cathode common. Low Forward Voltage : Vp 3 = 0.90V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.)	OCR Scan	HN1D02F HN1D02F 961001EAA2'	PDF
Contextual Info: HN1D02FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN1D02FU is composed of 2 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Unit in mm unit of cathode common.	OCR Scan	HN1D02FU D02FU HN1D02FU 961001EAA2'	PDF
HN1D02F Contextual Info: TOSHIBA HN1D02F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D02F Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN1D02F is composed of 2 unit of cathode common. Low Forward Voltage : Vp 3 = 0.90V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.)	OCR Scan	HN1D02F HN1D02F 961001EAA2'	PDF
Contextual Info: HN1D02F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02F Unit: mm Ultra-High-Speed Switching Applications z The HN1D02F is composed of two 2 cathode common units. z Low forward voltage : VF (3) = 0.90 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.)	Original	HN1D02F HN1D02F	PDF
HN1D02F Contextual Info: HN1D02F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02F Unit: mm Ultra High Speed Switching Application HN1D02F is composed of 2 unit of cathode common. Low forward voltage : VF 3 = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance	Original	HN1D02F HN1D02F	PDF

HN1D02FU Contextual Info: TOSHIBA HN1D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • HN1D02FU is composed of 2 unit of cathode common. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. • Small Total Capacitance	OCR Scan	HN1D02FU N1D02FU HN1D02FU 961001EAA2'	PDF
Contextual Info: HN1D02FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN1D02FU is composed of 2 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Unit in mm unit of cathode common.	OCR Scan	HN1D02FU D02FU HN1D02FU 961001EAA2'	PDF
Contextual Info: HN1D02FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application Unit: mm z The HN1D02FU is composed of 2 common cathode units. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)	Original	HN1D02FE HN1D02FU	PDF
Contextual Info: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)	Original	HN1D01FE HN1D02FU	PDF
HN1D02F Contextual Info: HN1D02F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02F Unit: mm Ultra High Speed Switching Application l HN1D02F is composed of 2 unit of cathode common. l Low forward voltage : VF 3 = 0.90V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance	Original	HN1D02F HN1D02F	PDF
HN1D02FE Abstract: HN1D02FU Contextual Info: HN1D02FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application Unit in mm The HN1D02FU is composed of 2 common cathode units. Low forward voltage : VF 3 = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.)	Original	HN1D02FE HN1D02FU HN1D02FE	PDF
Contextual Info: SILICO N EPITAXIAL PLA N A R T Y P E HN1D02F ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm + 0.2 2 .8 -0 3 . HN1D02F is composed of 2 unit of cathode common . Low Forward Voltage +02 Vp=0.90V Typ. 1 .6 - 0 .1 . Fast Reverse Recovery Time trr= l .6ns(Typ.)	OCR Scan	HN1D02F HN1D02F 100mA	PDF
HN1D01FE Abstract: HN1D02FU Contextual Info: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance	Original	HN1D01FE HN1D02FU HN1D01FE	PDF
Contextual Info: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF 3 = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance	Original	HN1D02FU HN1D02FU	PDF
HN1D02F Contextual Info: HN1D02F 東芝ダイオードシリコンエピタキシャルプレーナ形ダイオード HN1D02F ○ 超高速スイッチング用 z z z z 単位: mm カソードコモンを 2 ユニット内蔵順方向特性が良い。 : VF 3 = 0.90V (標準)	Original	HN1D02F SC-74 100mA HN1D02F	PDF

HN1D02F Search Results

HN1D02F Price and Stock

Toshiba America Electronic Components HN1D02FU,LF

Toshiba America Electronic Components HN1D02FU(T5L,F,T)

Toshiba America Electronic Components HN1D02F(TE85L,F)

Toshiba America Electronic Components HN1D02FE,LF

Toshiba America Electronic Components HN1D02FU,LF(B

HN1D02F Datasheets (13)

HN1D02F Datasheets Context Search

4558 dd

HN1D02FU

HN1D02FE

HN1D02FE

HN1D02F

HN1D02F

HN1D02FU

HN1D02F

HN1D02FE

HN1D01FE

HN1D02F