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    Text: TOSHIBA HN2D02FU TOSHIBA DIODE H • ■ N m 'm SILICON EPITAXIAL PLANAR TYPE 7 n mmr f l 7 F 1 1 ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm HN2D02PU is composed of 3 independent diodes. TT A m T /m _ \ Low Forward Voltage : vj?’ 3 = U.30V Viyp.;


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    PDF HN2D02FU HN2D02PU 961001EAA2'