HN3C11 Search Results

Contextual Info: TO SHIBA HN3C11F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C11F Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS h 0.2 • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TO SHIBA HN3C11F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C11F Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS h 0.2 • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TOSHIBA HN3C11F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3r 11F • ■ 'm ■ m tr ■ ■ ■ V H F - U H F B A N D LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X I M U M RATINGS (Ta = 25°C)

Silicon NPN Epitaxial Planar Type

Abstract: WM 6
Contextual Info: HN3C11 FU TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 1 1 FU Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US 6 Ultra Super Mini Type with Leads 2-1 + 0.1 6 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TOSHIBA HN3C11FU T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE H N 3 C 1 1 FU Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads 2.1 ± 0.1 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA HN3C11FU T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3ri1Fll • ■ u 'm mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: HN3C11 FU TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 1 1 FU Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US 6 Ultra Super Mini Type with Leads 2-1 + 0.1 6 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

HN3C11F

Contextual Info: TOSHIBA HN3C11F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C11F V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

HN3C11F

Abstract: N3C11
Contextual Info: TOSHIBA HN3C11F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C11F Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS + 0.2 • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

tbf819

Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
Contextual Info: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表 次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 保守品種 1 形 名 代替品種 形 名 代替品種

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入