HN3C14F Search Results

Contextual Info: HN3C14FU TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FU Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

transistor HD marking

Contextual Info: TOSHIBA TENTATIVE HN3C14F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 • ■ 'm ■ m tr r1AF ■ ■ ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)

transistor marking c3n

Contextual Info: TOSHIBA HN3C14FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 r 1 A F 11 • ■ u 'm mm V H F- U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 U ltra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)

HN3C14FU

Contextual Info: TO SH IBA HN3C14FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 i 0.1 TnrlnHincp T w n T ìpviV ps in TTSÆ ÍTTlt.rn S n n p r M in i T vn p wit.Vi Æ Leads MAXIMUM RATINGS Ta = 25°C)

HN3C14F

Contextual Info: HN3C14F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 14 F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO v EBO ic Ib MARKING

2SC5111

Abstract: HN3C14FT
Contextual Info: T O S H IB A HN3C14FT TENTATIVE T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C14FT Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

HN3C14FU

Contextual Info: T O S H IB A HN3C14FU TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FU Unit in mm V H F - U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X I M U M RATINGS (Ta = 25°C)

Contextual Info: T O SH IB A TENTATIVE HN3C14FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H Mí f 1 dFT • ■ m 'm w ■ ■ ■ ■ Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • 2.1 ±0.1 TWO devices are built in to the super-thin and ultra super

2SC5111

Abstract: HN3C14FT
Contextual Info: TO SH IBA TENTATIVE HN3C14FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FT Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 1.25 ± 0.1

HN3C14FU

Contextual Info: TOSHIBA HN3C14FU TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FU Unit in mm V H F - U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS 2.1 • ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X I M U M RATINGS (Ta = 25°C)

2tj transistor

Contextual Info: TO SHIBA TENTATIVE HN3C14FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 IJ5ÎU.1

HN3C14

Contextual Info: TOSHIBA TENTATIVE HN3C14F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14F Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS + 0.2 2.8 -0 .3 Including Two Devices in SM6 Super Mini Type with 6 Leads t-0.2 - EE MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TO SH IBA TENTATIVE HN3C14FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 1.25 ± 0.1

2SC5111

Abstract: HN3C14FT
Contextual Info: TO SH IBA TENTATIVE HN3C14FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FT Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6 1.25 ± 0.1

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

2SK3075 equivalent

Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Contextual Info: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz