HN58S256AT Search Results

Hitachi DSAUTAZ005

Contextual Info: HN58S256A Series Package Dimensions HN58S256AT Series TFP-28DB Unit: mm 8.00 8.20 Max 15 1 14 11.80 28 0.55 0.22 ± 0.08 0.10 M 0.20 ± 0.06 0.45 Max 0.80 13.40 ± 0.30 Dimension including the plating thickness Base material dimension 16 +0.07 0.13 –0.08

Hitachi DSAUTAZ005

Contextual Info: HN58S256AI Series Package Dimensions HN58S256ATI Series TFP-28DB Unit: mm 8.00 8.20 Max 15 1 14 11.80 28 0.55 0.22 ± 0.08 0.10 M 0.20 ± 0.06 0.45 Max 0.80 13.40 ± 0.30 Dimension including the plating thickness Base material dimension +0.07 0.13 –0.08

A1015

Contextual Info: HN58S256A Series Ordering Information Type No. Access time Package HN58S256AT-15 HN58S256AT-20 150 ns 200 ns 28-pin plastic TSOP TFP-28DB Pin Arrangement HN58S256AT Series A2 A1 A0 I/O0 I/O1 I/O2 VSS I/O3 I/O4 I/O5 I/O6 I/O7 CE A10 15 16 17 18 19 20 21 22

A1015

Contextual Info: HN58S256AI Series Ordering Information Type No. Access time Package HN58S256ATI-15 HN58S256ATI-20 150 ns 200 ns 28-pin plastic TSOP TFP-28DB Pin Arrangement HN58S256ATI Series A2 A1 A0 I/O0 I/O1 I/O2 VSS I/O3 I/O4 I/O5 I/O6 I/O7 CE A10 15 16 17 18 19 20

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

Hitachi DSA00171

Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry

Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry

Renesas mnos

Abstract: TBL Series HN58S256A HN58S256AT HN58S256AT-15 HN58S256AT-15E HN58S256AT-20 HN58S256AT-20E
Contextual Info: HN58S256A Series 256 k EEPROM 32-kword x 8-bit REJ03C0150-0300Z (Previous ADE-203-692B (Z) Rev.2.0) Rev. 3.00 Feb.26.2004 Description The HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has

HN58S256A

Abstract: HN58S256AT HN58S256AT-15 HN58S256AT-20 Hitachi DSA0047
Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-692A Z Rev. 1.0 Sep. 9, 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology. It also

Hitachi DSA002713

Contextual Info: HN58S256A Series 256 k EEPROM 32-kword x 8-bit ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROMÕs organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology.

Hitachi DSA00164

Contextual Info: HN58S256AI Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-669B Z Rev. 2.0 Sep. 17, 1997 Description The Hitachi HN58S256AI is electrically erasable and programmable ROM organized as 32768-word × 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS

transistor 669A

Abstract: Hitachi DSA00171
Contextual Info: HN58S256AI Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-669A Z Rev. 1.0 May. 20, 1997 Description The Hitachi HN58S256AI is electrically erasable and programmable ROM organized as 32768-word × 8-bit. It has realized high speed, low power consumption and high reliability

Contextual Info: HN58S256AI Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-669B Z Rev. 2.0 Sep. 17, 1997 Description The Hitachi HN58S256AI is electrically erasable and programmable ROM organized as 32768-word x 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS

Contextual Info: HN58S256AI Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-669A Z Rev. 1.0 May. 20,1997 Description The Hitachi HN58S256AI is electrically erasable and programmable ROM organized as 32768-word x 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS

Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry

vco ss

Contextual Info: HN58S256AI Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-669A Z Rev. 1.0 May. 20, 1997 Description The Hitachi HN58S256AI is electrically erasable and programmable ROM organized as 32768-word x 8-bit. It has realized high speed, low power consumption and high reliability

HN58S256ATI-15

Abstract: HN58S256ATI-20 TDL200 Hitachi DSA0047
Contextual Info: HN58S256AI Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-669B Z Rev. 2.0 Sep. 17, 1997 Description The Hitachi HN58S256AI is electrically erasable and programmable ROM organized as 32768-word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS

692b

Abstract: HN58S256A HN58S256AT HN58S256AT-15 HN58S256AT-20 Renesas mnos ADE-203-692B
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-word x 8-bit employing advanced MNOS memory technology and CMOS process

Contextual Info: HN58S256A Series 256 k EEPROM 32-kword x 8-bit HITACHI ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROMÔs organized as 32768word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology.

Contextual Info: HN58S256AI Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-669B Z Rev. 2.0 Sep. 17, 1997 Description The Hitachi HN58S256AI is electrically erasable and programmable ROM organized as 32768-word X 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS

HN58C1001FPI-15

Abstract: HN58C1001FPI-15 hitachi M5M5V216ATP-55HI M5M51008DFP-55HI BGA-165 M5M5W817 TSOP 28 SPI memory Package flash BGA165 SRAM 512K*8 BIT SOP32 M5M5256DFP-70LL
Contextual Info: Memory Products Reliable specialty, advanced and mainstream commodity memory devices for digital storage applications Renesas, the #3 semiconductor supplier worldwide, offers an extensive range of memory ICs for temporary and permanent digital storage in all kinds