HP RF MICROWAVE Search Results

8449B

Abstract: HP 8447D 8349b HP 8347A HP 8348A HP 8447A 8349A 8447A 8447D 8348A
Contextual Info: IN99SEC029.QXD MiXmedia Sign-off: 8/25/98 10:03 AM Page 315 Client: Hewlett Packard [ ] as is Project: HP Test & Measurment 98 Catalog [ ] with changes mark in red [ / / ] date Amplifiers RF and Microwave Amplifiers 315 HP HP HP HP HP HP HP 8347A and HP 8447A/D Amplifiers

ina series

Abstract: Signal Path Designer AN-S003
Contextual Info: INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process. These devices are 50 ohm

INA-03170

Abstract: INA-01170 INA-02170 INA-03 6679 az ina series AN-S003 INA-10386 mmic ina INA-01
Contextual Info: INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process. These devices are 50 ohm

transistor rf type M 2530

Abstract: signal path designer INA02170
Contextual Info: f T J I H EW LETT 1WM P A C K A R D INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process.

Tekelec Temex

Abstract: Tekelec HP 8753 Tekelec diode WILTRON HP83620A
Contextual Info: RF & MICROWAVE MODULES Introduction Introduction TEKELEC TEMEX designs, develops and manufactures standard and custom IF, RF and microwave modules for military and professional applications. TEKELEC TEMEX has the engineering ressources and production capacity of a large company, as well as the flexibility to rapidly deliver small quantities

diode A14B

Contextual Info: W fio l H E W L E T T mÜKM P A C K A R D HP 71708A M icrow ave Source HP 70428A M icrow ave Source M odule Technical Data Variable frequency source w ith lowest phase noise i’ourtosy of McDonnell Douglas The HP 71708A microwave source provides signals with

33144A

Abstract: 33190B HP 33144A HP 33134a 33140 33142A MIL-STD-883 METHOD 1009 MIL-E-5400R 33144A hp
Contextual Info: W hß%HEWLETT mL/ÍM P A C KA RD Fast Microwave SPST Switches and Attenuators DC-18 GHz Technical Data Features • 5 ns Sw itching • TTL Com patible D river • H erm etic • Low In sertio n Loss • H igh Isolation • Low B ias C u rren t Description

construction of varactor diode

Abstract: voltage controlled oscillator circuit with op amp oscillator circuit diagram in modulation techniques VT0-8060 motorola varactor varactor diode datasheet VTO-9000 varactor high power motorola rf book testing of varactor diode
Contextual Info: Voltage Controlled Oscillators The Hyperabrubt Varactor A hyperabrupt varactor diode differs from the conventional or abrupt varactor used in microwave oscillators in that the concentration of the N-type material in the depletion region is made non-uniform through

Contextual Info: H Avantek Products Threshold Detector 10 to 2000 MHz Technical Data UTD-2002 Features Description Pin Configuration • Externally Set Threshold The UTD-2002 is a sensitive microwave threshold detector which provides efficient and accurate RF level measurement at

Contextual Info: APSIN20G Specification 2.0 July 2014 Portable 20 GHz Microwave Signal Generator with Options HP, PE3, NM 1 Introduction The APSIN20G is a low-noise and fast-switching microwave signal generator covering a continuous frequency range from as low as 100 kHz up to 20.5 GHz with a 0.001 Hz

33322H

Abstract: 33322G HP programmable attenuator 33321H 33320H hp 33322g 33320G 33323K 33321G HP DC POWER CONNECTOR
Contextual Info: PDFINFO H5 5 9 8 - 0 1 Microwave Switch/Step Attenuator Driver HP E1370A Technical Specifications ● ● ● ● ● Switching and attenuation up to 26.5 GHz Drive any HP 8766K/67K/68K/69K microwave switch Drive any HP 3332XG prog. step attenuator Programmable 1 or 10 dB steps up to 110 dB

E1368A

Abstract: E1369 E1370A
Contextual Info: PDFINFO H5 5 9 6 - 0 1 18 GHz Microwave Switch 3 channels HP E1368A Technical Specifications ● ● ● ● ● Signal switching from dc to 18 GHz Three internal SPDT 50 Ω terminated switches Two additional external switches allowed High isolation >90 dB provided

HP 5082-3081

Abstract: HSMP-3814 avago 5188 hsmp3814 HSMP-386x Series KYOCERA RESISTOR NETWORKS mcr10ezhj222 "Common rail" HSMP-38 sot-323 CR21
Contextual Info: A Low-Cost Surface Mount PIN Diode π Attenuator Application Note 1048 Introduction Background Analog attenuators find wide application in RF and microwave networks. Realized as either GaAs MMICs or PIN diode networks, these circuits are used to set the power level of an RF signal from a voltage control. In

33311B

Abstract: Dynatech Microwave Tech 8762B 33312B 33311C 8762B-011
Contextual Info: PDFINFO H5 5 9 7 - 0 1 Microwave Switch Driver HP E1369A Technical Specifications ● ● ● ● ● Signal switching from dc to 26.5 GHz Drive three internal 50 Ω terminated switches Drive two additional external switches Select internal or use external energizing

Avantek yig

Abstract: yig oscillator hp AVANTEK YIG tuned oscillator AVANTEK, yig yig oscillator avantek avantek yig oscillator avantek YTO HP yig oscillator YIG Bandpass Filters yig band filter
Contextual Info: Glossary Terms and Definitions Cascade Aluminum Oxide, Al203 — Alumina ceramic is used as the substrate material on which is deposited thin conductive and resistive layers for thinfilm microwave integrated circuits. A series of microwave amplifier stages connected

Contextual Info: MI CR O W A V E TECHNOLOGY bfc,E D • b l 2 4 1 0 0 0 0 0 0 3 0 4 1T3 « N R W V MwT-13 18GHz HIGH POWER GaAs MESFETCHIP MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES l- 1 • +27 dBm P-1 dB AT 12 GHz

Triangle Microwave

Contextual Info: APSIN12G Specification 1.03 March 14 Portable 12 GHz Microwave Signal Generator 1 Introduction The APSIN12G is a low-noise and fast-switching microwave signal generator covering a frequency range from 100 kHz up to 12 GHz. The APSIN12G a wide and accurately levelled output power range and high spurious

reflectometer

Abstract: F 6256 ap 4502 HP 4502 w-band 77 GHZ Rf Detectors v-band MIL-F-3922/52-034
Contextual Info: 6250.qxd 07/Dec/2004 10:08 Page 1 Microwave 6250 Series Millimieter Wave Reflectometer s The 6250 series adds millimetric wave measurement capability to a standard 6200B series MTS • Accurate Return Loss and Insertion Loss measurements to 110 GHz • Compatible with standard 6200B, 6203B

hfr 20w

Abstract: microwave transmitter 10GHz military resistors catalog datasheet A1206 Fixed Attenuators Surface Mount 30dB microwave product catalog 10ghz attenuator circulator 2.3 2.7 GHz Surface Mount 10 GHz Isolator A1206
Contextual Info: Microwave/High Frequency Product Catalog Microwave/High Frequency Product Catalog November 2008 A subsidiary of TT electronics plc IRC Advanced Film Division IMPEDANCE CONVERTER ATTENUATORS TERMINATORS Microwave/High Frequency Chip Product Selection Guide

MWT1171HP

Abstract: 1171H
Contextual Info: M e M wT -11 16 GHz HIGH POWER GaAs FET ? MicroWave Technology 4268 Solar way Fremont, 94538 510-651-670q f a x s io -651-22Q8 FEATURES »-751 t-73-l ca • 1 WATT POWER OUTPUT AT 12 GHZ • HIGH ASSOCIATED GAIN 343 • 0.3 MICRON REFRACTORY METAL/GOLD GATE

Contextual Info: MICROWAVE TECHNOLOGY bbE usvt I- r m blEMlOQ 00D023A LTS • PIRUV w T - 3 26 GHz High Power GaAs FET 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES r —7Pr l «* ■ M MicroWave Technology t » • +21 DBM OUTPUT POWER AT 12 GHZ

marking I2 SOT23-5

Contextual Info: Thaï mLUMHP AECWKLAERTDT Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface Mount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/|iW at 915 MHz up to 35 mV/jiW at 2.45 GHz

MWT1171HP

Contextual Info: MICROWAVE TECHNOLOGY bbE D • blEMlQG ÜDDDS^b ET7 ■ PIRIdV MwT-11 16 GHz HIGH POWER GaAs FET MicroWave Technology 1-751 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES 1-731 1 WATT POWER OUTPUT AT 12 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY M ETAL/GOLD

marking DIODE 2U 04

Abstract: 386b
Contextual Info: fhlï milita HEWLETT PACKARD Surface Mount PIN Diodes in SOT-323 SC-70 3-Lead Technical Data Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-323