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    HSB1386J Search Results

    HSB1386J Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    HSB1386J
    		Hi-Sincerity Mocroelectronics PNP Bipolar Transistor Original PDF 47.01KB 4

    HSB1386J Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TL 434

    Abstract: y1 marking code transistor HSB1386J
    Contextual Info: HI-SINCERITY Spec. No. : HJ200301 Issued Date : 2001.11.30 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386J LOW FREQUENCY TRANSISTOR -20V, -4A Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) • Excellent DC current gain characteristics.


    Original     		HJ200301 HSB1386J O-252 183oC 217oC 260oC TL 434 y1 marking code transistor HSB1386J PDF

    y1 marking code transistor

    Abstract: y2 marking HSB1386J HSD2118J TL 434 transistor y1 MARK Y1 Transistor marking Y1 transistor
    Contextual Info: HI-SINCERITY Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HSD2118J LOW VCE sat TRANSISTOR (20V, 5A) Feature • Low VCE(sat), VCE(sat)=0.6V(Typ.)(IC=4A/IB=0.1A) • Excellent DC Current Gain Characteristic


    Original     		HJ200205 HSD2118J HSB1386J O-252 183oC 217oC 260oC y1 marking code transistor y2 marking HSB1386J HSD2118J TL 434 transistor y1 MARK Y1 Transistor marking Y1 transistor PDF