HSCH9101 Search Results

Contextual Info: HSCH9101 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage800m @I(FM) (A) (Test Condition)1m @Temp. (øC) (Test Condition)25

L 9101

Abstract: HSCH-9101 HSCH-9201 HSCH-9251 VF10 HSCH9201
Contextual Info: Agilent HSCH-9101/9201/9251 GaAs Beam Lead Schottky Barrier Diodes Data Sheet Features • Gold tri-metal system for improved reliability • Low capacitance • Low series resistance • High cutoff frequency • Polyimide passivation HSCH-9201 Description

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

L 9101

Abstract: ups 700 HSCH-9201 HSCH-9251 VF10 HSCH-9101 Avago Technologies Schottky HSCH9201
Contextual Info: HSCH-9101/9201/9251 GaAs Beam Lead Schottky Barrier Diodes Data Sheet Description The HSCH-9101 single, the HSCH-9201 series pair, and the HSCH-9251 anti-parallel pair are advanced gallium arsenide Schottky barrier diodes. These devices are fabricated utilizing molecular beam epitaxy MBE

HSCH9201

Contextual Info: What HEW LETT* miltm PACKARD GaAs Beam Lead Schottky Barrier D iodes Technical Data HSCH-9101 HSCH-9201 HSCH-9251 Features HSCH-9101 • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency

24so2

Abstract: HSCH9201
Contextual Info: H E W L E T T - P A C K A R D n C M PN TS HEW LETT 'Í2J P A C K A R D SGE D 4447SÖ4 Q0D5bS3 G HSCH-9101 HSCH-9201 HSCH-9251 TXVW-9101 TXVW-9201 TXVW-9251 GaAS BEAM LEAD SCHOTTKY BARRIER DIODES Features GOLD TRI-METAL SYSTEM For Improved Reliability 2S0m.QE

L346

Contextual Info: • M4 M7 S ö 4 GODTbOl HEWLETT-PACKARD/ 31T «HPA C MP NTS f X - « HEW LETT blE D PACKARD GaAs Beam Lead Schottky Barrier Diodes Technical Data HSCH-9101 HSCH-9201 HSCH-9251 Features • Gold Tri-M etal System For Improved Reliability • Low C apacitance

04B SOT363

Abstract: 35 micro-X Package MARKING CODE F
Contextual Info: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)

HSCH-8201

Abstract: schottky diodes Anti parallel HSCH9201
Contextual Info: fh p \ HEWLETT mi'HM PACKARD GaAs Beam Lead Schottky Barrier Diodes Technical Data HSCH-9101 HSCH-9201 HSCH-9251 Features • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation

9351

Abstract: HSCH-9301 9301 9301 rohs HSCH-9351 HSCH-9101 HSCH-9201 HSCH-9251 HSCH9201
Contextual Info: Beam Lead GaAs Schottky Barrier Diodes Rs Part Ctotal Number pF (Ohms) HSCH-9101 HSCH-9201 HSCH-9251 HSCH-9301 HSCH-9351 0.040 0.040 0.040 0.075 0.075 6 6 6 6 6 Bv @ -10 µA (V) VF @ 1 mA (mV) Type Page >4.5 >4.5 >4.5 >4.5 >4.5 700 700 700 700 700 single

micro-x marking code E1

Abstract: 0004E4 SOT 86 MARKING E4
Contextual Info: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)

5082-3188

Abstract: HP 5082-3081 hp 5082* guide
Contextual Info: Non-Surface Mount PIN and Schottky␣ Diodes Selection Guide General Purpose Glass Schottky Diodes Typical Specifications @ 25°C Case Temperature Part Number Applications Vbr (V) Vf @ 1 mA (mV) Ct (pF) Ir (nA) 5082-2800 (1N5711) High level detecting, mixing, switching, gating, sampling, wave shaping

micro-x marking code E1

Abstract: SOT363 marking 12X DRR1-23XX DRR1-38XX DRT1-23XX HSCH-9101 HSCH-9161 HSCH-9201 SOT 86 MARKING E4 sot-23 6121
Contextual Info: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

HSCH-9201

Abstract: HSCH9201
Contextual Info: GaAs Beam Lead Schottky Barrier Diodes Technical Data HSCH-9101 HSCH-9201 HSCH-9251 Features HSCH-9101 • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation • Multiple Configurations

HSCH-9101

Abstract: HSCH-9201 HSCH-9201TC494 HSCH-9251 VF10 HSCH9201
Contextual Info: Agilent HSCH-9101, -9201, and -9251 GaAs Beam Lead Schottky Barrier Diodes Data Sheet Features • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation • Multiple Configurations

5082-2830

Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

SCHOTTKY DIODE SOT-143

Abstract: sot 23 x 316 HSCH-5312 HSMS-285A HSMS-280X HSMS-281X HSMS-282X HSMS-285X HSMS-286X HSMS-8101
Contextual Info: Schottky Diode Selection Guides SOT-23/-143 General Purpose Schottky-Barrier Diodes Part VBR V VF (mV) VF @ IF (V @ mA) Number (min) (max) (max) HSMS-282X HSMS-281X HSMS-280X 15 20 70 340 400 400 Ct (pF) (max) RD (Ω) (typ) Page 1.0 1.2 2.0 12 15 35 3-36

LNA ku-band

Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

diode hp 2800 SMD

Abstract: diode hp 2800 smd schottky diode T4 HSMP-2810 gold metal detectors diode hp 2810 HSMS-2862 TAG 9101 Waveform Clipping With Schottky diode hp 5082-2751
Contextual Info: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf

HSCH9201

Contextual Info: WhttI H EW L E T T mXM PA CK A R D GaAs Beam Lead Schottky Barrier D iodes Technical Data HSCH-9101 HSCH-9201 HSCH-9251 Features HSCH-9101 • Gold Tri-M etal System For Improved Reliability • Low C apacitance • Low S eries R esistance • High C u toff Frequency

Contextual Info: Thnl HEWLETT WFEM PACKARD Schottky Diode Selection Guides SOT-23/-143 General Purpose Schottky-Barrier Diodes Vf mV VF @ IF(V @ mA) Part VBr (V) (m in) (m ax) (m ax) Number 15 20 70 HSMS-282X HSMS-281X HSMS-280X 340 400 400 Ct (p F ) (m ax) RD(£i) (ty p )

HSCH-9551

Contextual Info: Schottky Diode Selection Guides SOT-23/-323 Schottky-Barrier Diodes Part VBR V Number (min) HBAT-540X HSMS-270X 30 15 VF (mV) (max) CT (pF) (max) RS (Ω) (typ) τ (ps) (typ) 800 550 3.0 6.7 2.4 0.65 100 100 In a SOT-23 package, the “X” in the above part numbers is replaced by “0” for a single diode configuration, and a “2” for