HSHI Search Results
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Analog Devices Inc SMARTMESH-SHIELD02-PBFDUST - RF SHIELD |
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SMARTMESH-SHIELD02-PBF | Tube |
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SMARTMESH-SHIELD02-PBF | 1,272 |
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Analog Devices Inc SMARTMESH-SHIELD02-TRPBFSMARTMESH RF SHIELD FOR ETERNA |
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SMARTMESH-SHIELD02-TRPBF | Reel |
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SMARTMESH-SHIELD02-TRPBF | 1,128 |
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ADLINK Technology Inc THSH-IB-BL- Bulk (Alt: THSH-IB-BL) |
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ADLINK Technology Inc THSH-IBE2-BL- Bulk (Alt: THSH-IBE2-BL) |
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ADLINK Technology Inc THSH-IBR-BTL- Bulk (Alt: THSH-IBR-BTL) |
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THSH-IBR-BTL |
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HSHI Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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s-parameter
Abstract: S11S22-S12S21 fa12 mark RF S-parameters RF transistors with s-parameters s-parameter s11 s12 s21 FA12 FB12 agilent ads cst microwave studio
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coreless substrate
Abstract: SDD11 coreless Coreless pcb transformer
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40-Gbps CP-01038-1 10-Gbps coreless substrate SDD11 coreless Coreless pcb transformer | |
50n03
Abstract: 6030L 70N03 P transistor Comparison Tables 70N03
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351nF DesignCon 2010 Analysis FPGA Noise Propagation Package Modeling Altera Corporation
Abstract: 400um XCItepi powersi 50GHZ 351nF Design Seminar Signal Transmission Fabrication process steps metal core pcb
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PH C24Contextual Info: Evaluations of Package Technologies for Power Distribution Network Decoupling by Measurement and Correlation Nikolai Fediakine and Hong Shi Altera Corp 101 Innovation Dr., San Jose, CA, 95134 Email: nfediaki@altera.com, hshi@altera.com. Abstract A design of the proper frequency behavior of a power |
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electrical engineering projectsContextual Info: DesignCon 2008 Process and Temperature Variations on Electrical Parameters of Wire-Bond BGA Packages: an Impact Analysis Using Simulation-Based DOE Methodology Hui Liu, Altera Corporation hliu@altera.com Hong Shi, Altera Corporation hshi@altera.com CP-01040-1.0 |
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CP-01040-1 electrical engineering projects | |
g1962-01
Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
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100lux 2856K 1Q-90% G1117 G1120 G2711 G1735 G1736 G1737 G1738 g1962-01 u1116 G1126-02 hamamatsu PIN TO5 3x1015 | |
TMS34061FNL
Abstract: lad1-5v TMS34070NL S3406 TL 413 SPVU001 MJ340 TA2625
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32-Bit 128-Megabyte 16-Bit 64-Bit 256-Byte TMS34061FNL lad1-5v TMS34070NL S3406 TL 413 SPVU001 MJ340 TA2625 | |
Contextual Info: 10 1 NOTES: A ± m i/ 2 = is a *^(2Bfflo APPLY FOR (CIRCUIT/2) =EVEN. . S 7 # 4 MATERIAL 4. tt/a T I# I 5 1 3 3 8 0 4 - 0 C l / I - L k H T U T 7- ( L C P ) ;+lL.AWW U L 9 4 V - 0 ( H ) MATE WITH : 5 I338 SERIES. WAFER: LIQUID CRYSTAL POLYMERIGLASS FILLED) |
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UL94V-0 08MAXIMUM 00A/02/20 SD-55909-003 EN-02JA | |
TDA8172 equivalent
Abstract: IR430F smps 10kW EHT CABLE 25KV shielded BC557 BC547 working APPLICATION TRANSISTOR TDA8172 smps 1kW smps 10w 12V R65-R66 smps transformer
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TDA9103 TDA8172) TDA9103 TDA8172 TDA8172 equivalent IR430F smps 10kW EHT CABLE 25KV shielded BC557 BC547 working APPLICATION TRANSISTOR TDA8172 smps 1kW smps 10w 12V R65-R66 smps transformer | |
HY57V161610BContextual Info: C » « Y U H D f t P - - - - - - - - - - • H Y 57V 161610B 2 Banks x S12K X 16 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V161610B is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V161610B is organized as 2banks of |
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161610B HY57V161610B 216-bits 288x16 400mil 1Mx16 47M11 1SD22- | |
AN442
Abstract: IC LM7805 OF BLOCK diagram TDA1082 tda4880 M34ECL10X36 LM324 preamp circuit DIAGRAM IC LM7805 FEATURES uVGA HORIZONTAL TDA4880 IC LM7805
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87C751 BCM87C751 87C751 PCF8582EP-EEPROM TDA8444 TDA8444. 70kHz. AN442 LM7805 AN442 IC LM7805 OF BLOCK diagram TDA1082 tda4880 M34ECL10X36 LM324 preamp circuit DIAGRAM IC LM7805 FEATURES uVGA HORIZONTAL TDA4880 IC LM7805 | |
tda95xx
Abstract: siemens CAPACITOR gpf TDA 8840 free scr NBC gpf CAPACITOR IC PRESET TV TUNING RBL 43 P TRANSISTOR siemens handbook tube fm radio diagram 80C51
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TDA955X/6X/8X tda95xx siemens CAPACITOR gpf TDA 8840 free scr NBC gpf CAPACITOR IC PRESET TV TUNING RBL 43 P TRANSISTOR siemens handbook tube fm radio diagram 80C51 | |
Contextual Info: § 5 -= MHS IlM ll AIATRA-HARRIS SEMICONDUCTOR HM 6116/6116 L 2K x 8 CM OS STATIC RAM C k V rsx Features • MILITARY/INDUSTRIAL : FAST A C C E SS TIME : 120 ns • ASYNCHRONOUS • STAND BY CURRENT : 100 pA max • OPERATING SU PPLY CURRENT : SO mA max • BATTERY BACK UP OPERATION : 2V mln - SO jiA max |
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6116L 6116/6116L | |
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ac voltage stabilizer circuit diagram
Abstract: TDA3654 equivalent automatic change over switch circuit diagram pulse circuit SL 100 NPN Transistor TV horizontal Deflection Systems 25 automatic stabilizer circuit diagram BAX12 equivalent inverter 12 V to 220 V phase sequence detector
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TDA2579C ac voltage stabilizer circuit diagram TDA3654 equivalent automatic change over switch circuit diagram pulse circuit SL 100 NPN Transistor TV horizontal Deflection Systems 25 automatic stabilizer circuit diagram BAX12 equivalent inverter 12 V to 220 V phase sequence detector | |
tda 9381 ps
Abstract: TDA 9361 PS TDA 9350 PS tda 9381 ps n2 ic tda 9381 TDA 9351 PS tda 9350 ps/n2 tda 9381 tda 9386 ps philips colour television picture tube pin volt
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TDA935X/6X/8X theTDA935X/6X/8X tda 9381 ps TDA 9361 PS TDA 9350 PS tda 9381 ps n2 ic tda 9381 TDA 9351 PS tda 9350 ps/n2 tda 9381 tda 9386 ps philips colour television picture tube pin volt | |
PCB 3d SURROUND sound system
Abstract: TDA6107A TDA120xxH tda120XX PHILIPS UOC PHILIPS UOCIII uocIII TDA6108A uoc chip Tone control subwoofer
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Contextual Info: BSP 318S In fin e o n technologies SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 ^DS V ^bs on 0.09 n b 2.6 |
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BSP318S OT-223 Q67000-S127 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T | |
DR-B 2003
Abstract: sw 2604 ic ic sw 2604 YC 2604 sw 2604 SI 1125H DIODE S4 76A TA1360AFG DR26A sw68
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TA1360AFG TA1360AFG 80-pin 525I/60, 625I/50, 525P/60, 625P/50, 1125I/50, 1125I/60, DR-B 2003 sw 2604 ic ic sw 2604 YC 2604 sw 2604 SI 1125H DIODE S4 76A DR26A sw68 | |
cxa1587s
Abstract: cxa1587 ic cxa1587s CXA-1587S sony tv vertical deflection circuit sony crt tv protect sony transmitter CXA 1587S sony dsp CXD2018AQ
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CXD2018AQ CXD2018AQ 48PIN QFP-48P-L04 QFP048-P-12t2-B 0G14b27 cxa1587s cxa1587 ic cxa1587s CXA-1587S sony tv vertical deflection circuit sony crt tv protect sony transmitter CXA 1587S sony dsp | |
TDA 9567 equivalent
Abstract: tda 9580 tda 9581 tda 9567 PW3V TDA 9551 equivalent transistor npn m 9587 625WST TDA 9583 siemens CAPACITOR gpf
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TDA955X/6X/8X TDA 9567 equivalent tda 9580 tda 9581 tda 9567 PW3V TDA 9551 equivalent transistor npn m 9587 625WST TDA 9583 siemens CAPACITOR gpf | |
MCM511001-85
Abstract: MCM511001-12 MCM511001
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MCM511001 MCM511001 Number----------511001 MCM511001P85 MCM511001P10 MCM511001P12 MCM511001J85 MCM511001J10 MCM511001-85 MCM511001-12 | |
Contextual Info: 10 «* NOTES 2. 3. 0.47±0.03 3±0.03 CüâgHM» 0„9±0.03 ro O O +i ltd 0.4±0.03 4. 5. MATERIAL ¡\ 0Vy3 : B ^ 'J V - U L 9 4 V - 0 HOUSING : LIQUID CRYSTAL POLYMER [LCP] UL94V-0 5-5^-jl : me# TERMINAL : COPPER ALLOY —JL • NAIL : COPPER ALLOY PLATING |
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UL94V-0 SD-500024-020 EN-02JAI021) | |
SDA and SCL share
Abstract: PCE84C486 PCE84C487 SDIP32 SDIP42 PWM130 T3B5 D20-instruction T3B6 PWM44
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PCE84C486; PCE84C487 SDA and SCL share PCE84C486 PCE84C487 SDIP32 SDIP42 PWM130 T3B5 D20-instruction T3B6 PWM44 |