HSMS0005 Search Results

HSCH-9161

Contextual Info: What H E W L E T T * mLlíM P A C K A R D Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features Applications • Low Junction Capacitance • Lower Temperature Coefficient than Silicon • Durable Construction— Typical 6 gram beamlead strength

ZERO Bias diode

Abstract: 12Xl HSCH-9161
Contextual Info: What HEW LETT mLfiM P A C K A R D Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features • Low Junction Capacitance • Lower Temperature Coefficient than Silicon • Durable Construction— Typical 6 gram beamlead strength • Operation to 110 GHz

HSCH-9161

Abstract: United Detector silicon diode application note 979
Contextual Info: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Features Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through 110 GHz. It

RFID 5.8Ghz

Abstract: phase shift detector at 2.45GHz rf power detector voltage doubler HSMS-286K ATC100A101MCA50 AN1124 ATC100A1 rfid reader 915MHZ microstrip Antenna 5.8ghz ct 4060
Contextual Info: HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optim­ized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications

DIODE 839

Abstract: HSCH-9161 zero bias schottky diode detector zero bias diode
Contextual Info: TOSI WLEMHEWLETT PACKARD Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features • Low Junction Capacitance • Lower Tem perature C oefficient than Silicon • Durable C onstruction— Typical 6 gram beam lead strength • O peration to 110 GHz

Contextual Info: What HEW LETT* miltm PACKARD Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data HSMS-0005/06 HSMS-8002/12 Features Description/Applications • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation

AGILENT TECHNOLOGIES 9161

Abstract: HSCH-9161 application note 979 HSMS-2850
Contextual Info: Agilent HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Features • Low junction capacitance • Lower temperature coefficient than silicon 231 9.1 Description Agilent’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified

FR4 substrate fiberglass

Abstract: AV02-1388EN schottky diode application sot-23 diode common anode t4 HSMS-2865 HSMS-286C
Contextual Info: HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optim­ized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications

Circuit integrated 8002

Abstract: HSMS0005 HSMS2850 HSMS8002 Hewlett-Packard microwave pin diode sn 8002
Contextual Info: Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data HSMS-0005/06 HSMS-8002/12 Features Description/Applications • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation • Uniform Electrical Characteristics

IAM-81008

Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

HSCH-9161

Abstract: HSMS-2850 United Detector silicon diode
Contextual Info: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through

HSCH-9162

Abstract: zero bias diode detector diode AGILENT TECHNOLOGIES 9162 HSMS-2850 zero bias schottky diode detector
Contextual Info: Agilent HSCH-9162 Zero Bias Beamlead Detector Diode Data Sheet Features • Low junction capacitance • Lower temperature coefficient than silicon 231 9.1 Description Agilent’s HSCH-9162 is a GaAs beamlead detector diode, fabricated using the modified

HSCH-9161

Contextual Info: Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features Applications • Low Junction Capacitance At room temperature and frequencies under 10 GHz, the silicon zero bias Schottky detectors HSMS-0005 and HSMS-2850 offer comparable performance. However, the HSCH-9161 yields

Contextual Info: Agilent HSCH-9161, -9162 Zero Bias Beamlead Detector Diodes Data Sheet Features • Low junction capacitance • Lower temperature coefficient than silicon 231 9.1 Description Agilent’s HSCH-9161 and HSCH-9162 are GaAs beamlead detector diodes, fabricated using

Contextual Info: Who mLftM 1 HEW LETT PACKARD Zero Bias Schottky Diode Chip for Hybrid Integrated Circuits Technical Data HSMS-0005 Features • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation • High Detection Sensitivity

h51 diode

Contextual Info: ^ HEWLETTPA C K A R D Zero B ias Schottky D iode Chip for H ybrid Integrated C ircuits Technical Data HSMS-0005 F ea tu re s C hip O u tlin e • T herm ocom presslon/ T herm osonica lly Bondable • Gold M etallization • Silicon N itrid e P assivation • H igh D etectio n S en sitiv ity

Contextual Info: Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data HSMS-0005/06 HSMS-8002/12 Features Description/Applications • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation • Uniform Electrical Characteristics

HSCH-9161

Contextual Info: warn H EW L E T T* 1 "Em PA CK A R D Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features Applications • Low Junction Capacitance At room temperature and frequen­ cies under 10 GHz, the silicon zero bias Schottky detectors HSMS-0005 and HSMS-2850 offer

HSCH-5337

Abstract: HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

SM 8002 C

Abstract: SM 8002 lm 8002 IC 8002 sm 8012 sn 8002 SM+8002+C
Contextual Info: RmLftm SIHEWLETTA PACKARD S c h o t tk y B arrier Chips for H ybrid I n te g r a te d C ircu its Technical Data H S M S -0 0 0 5 /0 6 H S M S -8 0 0 2 /1 2 F eatures * T h er m o c o m p re ssio n / T h erm osonically B ondable * G o ld M e ta lliz a tio n

HSCH-9161

Abstract: finline HSMS-2850 application note 979 detector diode
Contextual Info: Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features Applications • Low Junction Capacitance At room temperature and frequencies under 10␣ GHz, the silicon zero bias Schottky detectors HSMS-0005 and HSMS-2850 offer comparable performance. However, the HSCH-9161 yields

9161

Abstract: HSCH-9161 839 DIODE
Contextual Info: Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features Applications • Low Junction Capacitance At room temperature and frequencies under 10 GHz, the silicon zero bias Schottky detectors HSMS-0005 and HSMS-2850 offer comparable performance. However, the HSCH-9161 yields

Contextual Info: HEW LETT* 1"KM P A C K A R D Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data HSMS-0005/06 HSMS-8002/12 Features Description/Applications • T herm ocom pressioii/ Therntosonically Bondable • Gold M etallization • Silicon N itride P assivation

IC RFID 2.45 GHz

Abstract: HSMS-286B HSMS-286K 915 MHz RFID c65 schottky ZZ 6-lead 34 sot-363 rf power amplifier FR4 epoxy 286l AN1124
Contextual Info: HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optim­ized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications