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    HUF75307D3ST Search Results

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    HUF75307D3ST Price and Stock

    Rochester Electronics LLC HUF75307D3ST

    MOSFET N-CH 55V 15A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75307D3ST Bulk 740
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    • 1000 $0.41
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    onsemi HUF75307D3ST

    MOSFET N-CH 55V 15A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75307D3ST Reel
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    Rochester Electronics LLC HUF75307D3ST_NL

    N-CHANNEL POWER MOSFET
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    DigiKey HUF75307D3ST_NL Bulk 919
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    • 1000 $0.33
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    Fairchild Semiconductor Corporation HUF75307D3ST

    TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,15A I(D),TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HUF75307D3ST 1,967
    • 1 $1.3055
    • 10 $1.3055
    • 100 $1.3055
    • 1000 $0.5222
    • 10000 $0.4569
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    HUF75307D3ST 928
    • 1 $1.3055
    • 10 $1.3055
    • 100 $0.6528
    • 1000 $0.5222
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    HUF75307D3ST 921
    • 1 $0.7833
    • 10 $0.7833
    • 100 $0.7833
    • 1000 $0.3264
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    Rochester Electronics HUF75307D3ST 110,110 1
    • 1 $0.39
    • 10 $0.39
    • 100 $0.3666
    • 1000 $0.3315
    • 10000 $0.3315
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    ComSIT USA HUF75307D3ST 2,400
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    Win Source Electronics HUF75307D3ST 2,500
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    • 1000 $0.2584
    • 10000 $0.2239
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    Intersil Corporation HUF75307D3ST

    TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,15A I(D),TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HUF75307D3ST 662
    • 1 $1.3055
    • 10 $1.3055
    • 100 $0.6528
    • 1000 $0.5222
    • 10000 $0.5222
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    Find more HUF75307D3ST price and stock on Findchips.com

    HUF75307D3ST Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75307D3ST Fairchild Semiconductor 15A, 55V, 0.090 Ohm N-Channel UltraFET Power MOSFETs Original PDF
    HUF75307D3ST Fairchild Semiconductor 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75307D3ST Intersil MOSFET, Enhancement, N Channel, 55V, TO-252, 3-Pin Original PDF
    HUF75307D3S/T Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75307D3ST_NL Fairchild Semiconductor 15A, 55V, 0.090 Ohm N-Channel UltraFET Power MOSFETs Original PDF

    HUF75307D3ST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    75307

    Abstract: 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75307P3, HUF75307D3, HUF75307D3S 75307 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334

    75307D

    Abstract: AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334 75307P KP-03
    Text: HUF75307P3, HUF75307D3, HUF75307D3S S E M I C O N D U C T O R 13A, 55V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs April 1998 Features Description • 13A, 55V • Ultra Low On-Resistance, rDS ON = 0.090Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original     		PDF HUF75307P3, HUF75307D3, HUF75307D3S TB334, 1-800-4-HARRIS 75307D AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334 75307P KP-03

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A

    75307D

    Abstract: 75307 transistor 75307D TA75307 AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TB334
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75307P3, HUF75307D3, HUF75307D3S 43cts 75307D 75307 transistor 75307D TA75307 AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TB334

    rh-24v

    Abstract: JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C
    Text: Date Created: 2/24/2004 Date Issued: 4/8/2004 PCN # 20040802 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF RFG70N06 RFP45N06 HRF3205 HUF75307D3ST HUF75309D3S HUF75309T3ST HUF75321D3ST HUF75321S3ST R4908 HUF75329D3ST rh-24v JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C

    HUF75309D3ST

    Abstract: HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference
    Text: Date Created: 3/8/2004 Date Issued: 3/23/2004 PCN # 20041001 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0030402-A. ClinF75345P3 HUF75345S3ST RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 HUF75309D3ST HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference

    75307D

    Abstract: HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334 TC114E
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75307P3, HUF75307D3, HUF75307D3S 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334 TC114E

    DPAK JEDEC OUTLINE

    Abstract: 12SNOFC Tamac4 eme6600cs KFC 1/2H 90Pb10Sn ISL9N2357D3ST application notes ISL9N306AD TAMAC-4 fdd6512a
    Text: Date Created: 3/3/2004 Date Issued: 3/11/2004 PCN # 20033404-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0033404-A fairchildsem419D3ST HUF76429D3S HUF76609D3S HUF76619D3S HUF76629D3S ISL9N306AD3 ISL9N308AD3 ISL9N310AD3ST ISL9N315AD3 DPAK JEDEC OUTLINE 12SNOFC Tamac4 eme6600cs KFC 1/2H 90Pb10Sn ISL9N2357D3ST application notes ISL9N306AD TAMAC-4 fdd6512a

    75307

    Abstract: 75307d transistor 75307D AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 75307*p
    Text: HUF75307P3, HUF75307D3, HUF75307D3S S E M I C O N D U C T O R 13A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 13A, 55V The HUF75307 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original     		PDF HUF75307P3, HUF75307D3, HUF75307D3S HUF75307 1-800-4-HARRIS 75307 75307d transistor 75307D AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 75307*p

    75307D

    Abstract: No abstract text available
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75307P3, HUF75307D3, HUF75307D3S 75307D

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    75307D

    Abstract: 75307 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75307P3, HUF75307D3, HUF75307D3S HUF75307 HUF75307D3S 75307D 75307 HUF75307D3 HUF75307D3ST HUF75307P3 TA75307 TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75307P3, HUF75307D3, HUF75307D3S HUF75307

    75307D

    Abstract: 75307P TA75307 HUF75307D3
    Text: HUF75307P3, HUF75307D3, HUF75307D3S in t e r s il J u n e !99 9 D a ta S h e e t 15A, 55V, 0.090 Ohm, N-ChanneI UitraFET Power MOSFETs Th ese N-Channel power M O SFETs are manufactured using the File N u m b e r 4 3 5 3 .6 Features • 15A, 55V • Simulation Models


    OCR Scan     		PDF HUF75307P3, HUF75307D3, HUF75307D3S HUF75307D3S AN7254 AN7260. 75307D 75307P TA75307 HUF75307D3

    75307D

    Abstract: TA75307
    Text: HUF75307P3, HUF75307D3, HUF75307D3S in te fs il D a ta S h e e t J u n e 19 99 15A, 55V, 0.090 Ohm, N -Channel UltraFET Power MOSFETs Ultras These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan     		PDF HUF75307P3, HUF75307D3, HUF75307D3S HUF7S307P3, AN7254 AN7260. 75307D TA75307