HUF75631S3ST Search Results

75631p

Abstract: 75631 AN9321 AN9322 HUF75631P3 HUF75631S3ST TB334
Contextual Info: HUF75631P3, HUF75631S3ST Data Sheet August 2000 File Number 4720.3 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF75631P3 HUF75631S3ST Features

75631P

Abstract: AN7254 AN9321 AN9322 HUF75631P3 HUF75631S3ST TB334
Contextual Info: HUF75631P3, HUF75631S3ST TM Data Sheet August 2000 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs File Number 4720.3 Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF75631P3 HUF75631S3ST Features

75631P

Abstract: AN9321 AN9322 HUF75631P3 HUF75631S3ST TB334
Contextual Info: HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF75631P3 HUF75631S3ST Features • Ultra Low On-Resistance

75631P

Abstract: 75631S AN9321 AN9322 HUF75631P3 HUF75631S3S HUF75631S3ST TB334
Contextual Info: HUF75631P3, HUF75631S3S TM Data Sheet July 2000 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET File Number 4720.2 Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF75631P3 HUF75631S3S Features

12SnOFC

Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
Contextual Info: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will

Contextual Info: HUF75631S3S October 2013 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 33 A, 40 mΩ Packaging Features JEDEC TO-263AB DRAIN FLANGE GATE SOURCE • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

PCF75652W

Abstract: RFD14N05LSM9A FAIRCHILD SMD MARKING Fairchild wafer fab pcf7 100C AECQ101 HUF75652G3 JESD22-A102 HUF766
Contextual Info: Date Created: 12/8/2003 Date Issued: 1/26/2004 PCN # 20034903 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will