HUF76137S3ST Search Results

HUF76137S3ST Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
HUF76137S3ST		Fairchild Semiconductor	75 A, 30 V, 0.009 ohm, N-Channel, Logic Level UltraFET Power MOSFET	Original	PDF	223.98KB	11

HUF76137S3ST Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
76137s Abstract: 76137P TA7613 Contextual Info: interdi HUF76137P3, HUF76137S3S D atti S h e e t 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	HUF76137P3, HUF76137S3S 250jiA HUF76137S3S AN7254 AN7260. 76137s 76137P TA7613	PDF
76137S Abstract: 76137P HUF76137P3 AN9321 AN9322 HUF76137S3S HUF76137S3ST TB334 Contextual Info: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUF76137P3, HUF76137S3S 76137S 76137P HUF76137P3 AN9321 AN9322 HUF76137S3S HUF76137S3ST TB334	PDF
76137P Abstract: 76137S TA7613 75E1 AN9321 AN9322 HUF76137P3 HUF76137S3S HUF76137S3ST TB334 Contextual Info: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUF76137P3, HUF76137S3S 76137P 76137S TA7613 75E1 AN9321 AN9322 HUF76137P3 HUF76137S3S HUF76137S3ST TB334	PDF
Contextual Info: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Title UF7 37P UF76 7S3 bt A, V, 09 m, an, gic vel raF wer OSTs utho eyrds ter- These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.	Original	HUF76137P3, HUF76137S3S	PDF
12SnOFC Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532 Contextual Info: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will	Original	fairchildF76143S3S HUF76145S3S HUF76419S3ST HUF76432S3S HUF76439S3S HUF76445S3ST HUF76639S3S HUF76645S3ST ISL9N303AS3 ISL9N306AS3ST 12SnOFC PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532	PDF
76137P Abstract: 76137s Contextual Info: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUF76137P3, HUF76137S3S 76137P 76137s	PDF
76137s Abstract: M4E1 Contextual Info: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUF76137P3, HUF76137S3S O-263 HUF76137S3S 76137s M4E1	PDF
76137s Abstract: 76137P AN9321 AN9322 HUF76137P3 HUF76137S3S HUF76137S3ST TB334 ta76137 Contextual Info: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUF76137P3, HUF76137S3S 1999ts 76137s 76137P AN9321 AN9322 HUF76137P3 HUF76137S3S HUF76137S3ST TB334 ta76137	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
76137P Abstract: M4E1 DIODE N7 76137s Contextual Info: HUF76137P3, HUF76137S3S Semiconductor Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs * These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	HUF76137P3, HUF76137S3S HUF76137 76137P M4E1 DIODE N7 76137s	PDF
76137s Abstract: 76137P Contextual Info: HUF76137P3, HUF76137S3S in t e ik il D a ta S h e e t 75A, 30V, 0.009 Ohm, N-Channet, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	HUF76137P3, HUF76137S3S AN7254 AN7260. 76137s 76137P	PDF