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    HUF76145S3ST Price and Stock

    Rochester Electronics LLC HUF76145S3ST

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76145S3ST Bulk 290
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    Fairchild Semiconductor Corporation HUF76145S3ST

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    Bristol Electronics HUF76145S3ST 1,378
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    HUF76145S3ST 20
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    Quest Components HUF76145S3ST 1,102
    • 1 $2.856
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    HUF76145S3ST 16
    • 1 $2.268
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    Rochester Electronics HUF76145S3ST 1,706 1
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    Velocity Electronics HUF76145S3ST 894
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    HUF76145S3ST Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF76145S3ST Fairchild Semiconductor 75A, 30V, 0.045 Ohm, N-Channel, Logic Level UltraFET PowerMOSFETs Original PDF
    HUF76145S3ST Fairchild Semiconductor 75A, 30V, 0.0045 Ohm N-Channel, Logic Level UltraFET Power MOSFET Original PDF

    HUF76145S3ST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    76145P

    Abstract: No abstract text available
    Text: HUF76145P3, HUF76145S3S Data Sheet 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Title UF7 45P UF76 5S3 bt A, V, 045 m, an, gic vel raF wer OSTs utho eyrds ter- These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This


    Original     		PDF HUF76145P3, HUF76145S3S 76145P

    76145P

    Abstract: 76145S TA7614 AN9321 AN9322 HUF76145P3 HUF76145S3S HUF76145S3ST TB334
    Text: HUF76145P3, HUF76145S3S Data Sheet December 2001 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76145P3, HUF76145S3S 76145P 76145S TA7614 AN9321 AN9322 HUF76145P3 HUF76145S3S HUF76145S3ST TB334

    76145S

    Abstract: 76145P TA7614 AN9321 HUF76145P3 HUF76145S3S HUF76145S3ST TB334
    Text: HUF76145P3, HUF76145S3S TM Data Sheet August 2000 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76145P3, HUF76145S3S 76145S 76145P TA7614 AN9321 HUF76145P3 HUF76145S3S HUF76145S3ST TB334

    76145S

    Abstract: 76145P HUF76145P3 HUF76145S3S HUF76145S3ST TB334
    Text: HUF76145P3, HUF76145S3S Semiconductor Data Sheet 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the 145P3, innovative UltraFET process. HUF76 This advanced process technology


    Original     		PDF HUF76145P3, HUF76145S3S HUF76 145P3, 145S3S 06e-3 71e-3 07e-2 12e-2 76145S 76145P HUF76145P3 HUF76145S3S HUF76145S3ST TB334

    12SnOFC

    Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
    Text: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF fairchildF76143S3S HUF76145S3S HUF76419S3ST HUF76432S3S HUF76439S3S HUF76445S3ST HUF76639S3S HUF76645S3ST ISL9N303AS3 ISL9N306AS3ST 12SnOFC PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    TA7614

    Abstract: 76145P 671E-3 76145S AN9321 AN9322 HUF76145P3 HUF76145S3S HUF76145S3ST TB334
    Text: HUF76145P3, HUF76145S3S Data Sheet September 1999 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76145P3, HUF76145S3S TA7614 76145P 671E-3 76145S AN9321 AN9322 HUF76145P3 HUF76145S3S HUF76145S3ST TB334

    76145s

    Abstract: 76145p logic gate TA7614 HUF76145S3ST TB334 AN9321 HUF76145P3 HUF76145S3 HUF76145S3S
    Text: HUF76145P3, HUF76145S3, HUF76145S3S Data Sheet December 2003 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUF76145P3, HUF76145S3, HUF76145S3S 76145s 76145p logic gate TA7614 HUF76145S3ST TB334 AN9321 HUF76145P3 HUF76145S3 HUF76145S3S

    76145p

    Abstract: N50 DIODE 76145S TA7614 AN9321 AN9322 HUF76145P3 HUF76145S3S HUF76145S3ST TB334
    Text: HUF76145P3, HUF76145S3S Data Sheet September 1999 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76145P3, HUF76145S3S 76145p N50 DIODE 76145S TA7614 AN9321 AN9322 HUF76145P3 HUF76145S3S HUF76145S3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF76145P3, HUF76145S3, HUF76145S3S Semiconductor Data Sheet 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF76145P3, HUF76145S3, HUF76145S3S O-263AB O-263AB

    76145s

    Abstract: 76145P TA7614 P U 14 HUF76145
    Text: HUF76145P3, HUF76145S3, HUF76145S3S S em iconductor November 1998 Data Sheet 75A, 30 V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan     		PDF HUF76145P3, HUF76145S3, HUF76145S3S O-263AB 76145s 76145P TA7614 P U 14 HUF76145

    76145p

    Abstract: No abstract text available
    Text: HUF76145P3, HUF76145S3S Semiconductor January 1999 Data Sheet 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs t These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF76145P3, HUF76145S3S 00e-5 06e-3 07e-2 12e-2 06e-1 HUF76145 00e-3 50e-3 76145p

    76145p

    Abstract: F76145P3 76145s
    Text: interrii HUF76145P3, HUF76145S3S Dei ta S h e e t 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF76145P3, HUF76145S3S HUF76145S3S AN7260. 76145p F76145P3 76145s