HY29F040 Search Results

P55i

Abstract: HY29F040A P12-I
Contextual Info: HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements · High performance - 55 ns access time · Compatible with JEDEC-Standard Commands

Contextual Info: “H Y U N D A I HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 120 ns access time • Compatible with JEDEC-Standard Commands

Contextual Info: HY29F040 Series 512K x 8-bit CMOS, 5.0 Volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 90 ns access time • Low Power Consumption - 20 mA typical active read current

Hynix Semiconductor America

Contextual Info: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current

Contextual Info: HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements · High performance - 120 ns access time · Compatible with JEDEC-Standard Commands

Contextual Info: “H Y U N D A I mm • W ■ * mm ■ « ■ HY29F040 Series 5 1 2 K x 8 _b l t CMOS 5.0 volt-only, Sector Erase Flash Memory KEYFEATURES • 5.0 V ' 10% Read, Program, and Erase • - Minimizes system-level power requirements • High performance • Compatible with JEDEC-Standard Commands

Contextual Info: “H Y• U NDAI 1» 11 1 * * 1 1 512K x 8 . b jt CM 0S Series 5 0 v .HY29F040 0 n |y S e c t o r E ra s e F |a s h M e m 0 ry PRELIMINARY DESCRIPTION The HY29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as a 512K x 8 bits each. The HY29F040 is offered in an industry standard 32 pin package which is backward compatible to 1

Contextual Info: » H Y U N D A I H Y 2 9 F 0 4 0 S e r i e s ” 1 W 11 11 * 1 1 512K X 8-bit CMOS 5.0 V-Only, Sector Erase Flash Memory PRELIMINARY DESCRIPTION The HY29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as a 512K x 8 bits each. The HY29F040 is offered in an industry standard 32 pin package which is backward compatible to 1

Contextual Info: «HYUNDAI HY29F040 Series _512K x 8-bit CMOS 5.0 V-Only, Sector Erase Flash Memory Preliminary DESCRIPTION The HY29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as a 512k X 8 bits each. The HY29F040 is offered in an industry standard 32 pin package which is backward compatible to 1 Megabit and also

Contextual Info: •HYUNDAI HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEYFEATURES • 5.0 V * 10% Read, Program, and Erase - • • • Uses software commands, pinouts, and packages following industry standards for single power supply Flash memory

C55E

Abstract: C70E P55i
Contextual Info: “H Y U N D A I HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements High perform ance - 55 ns access tim e Compatible with JEDEC-Standard Comm ands

Contextual Info: «HYUNDAI HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 120 ns access tim e Compatible with JEDEC-Standard Comm ands

Contextual Info: •HYUNDAI HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 120 ns access tim e Compatible with JEDEC-Standard Comm ands

Contextual Info: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current

29F040A

Abstract: hyundai HY29F040A 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits HY29F040AT
Contextual Info: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current

hyundai HY29F040A

Abstract: 29f040a 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits
Contextual Info: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

755IA5

Abstract: synaptics SiS648FX OZ711M1 mPGA478b front panel SIS963 Touch pad synaptics ALC650 8259A-compatible synaptics touch pad
Contextual Info: Chapter 1 General System Description UNIWILL COMPUTER CORP. No. 24 Pei Yuan Road Chung Li Industrial Park, Chung Li City Tao Yuan, Taiwan, R.O.C. TEL: 886-3-461-6000 FAX: 886-3-461-6317 URL: http:// www.uniwill.com.tw/ 755IA5 Rev : A Page 1 - 15 Chapter 1

intel 27c512 eprom

Abstract: W27c256 f29c51002t 27cxxx programming 27c080 transistor N100 ti 27c256 TI 27c010 27C64 EPROM programmer eprom 27c512
Contextual Info: LEAPER-3D USB HANDY FLASH IC WRITER LEAPER-3D is a compact and light programmer, very suitable for the development and servicing or the hobby environment. Combining EPROM and FLASH memory devices programming, LEAPER-3D FLASH IC WRITER supports various 8-Bit devices by its 32-pin ZIF socket.

48pin TSOP

Abstract: 48pin HY29F400TT HY29F200B HY29F200
Contextual Info: •HYUNDAI QUICK REFERENCE GUIDE Flash Memory Quick Refrerence ORGANIZATION 2M bit 256KX8 (256Kx8/128Kx16) 4M bit (512Kx8) (512Kx8/256Kx16) 8M bit (1 Mx8) 98 Flash DATA BOOK PART NUMBER SPEED(ns) FEATURES PACKAGE HY29F002TT HY29F002TR HY29F002BT HY29F002BR

P55i

Contextual Info: •«}] Y U N D A l HY29F002 Series 256K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements Compatible with JEDEC-Standard Comm ands - Uses software comm ands, pinouts, and

M5m27c201j

Abstract: 28F101 w49v002fap W49F002UP-B intel 28F256 gang capacitor am29f020 Fujitsu MBM27C1000 gang capacitor pin details M5M27C101J
Contextual Info: PRODUCT DATA SHEET AD63 479-901 and AD51 (479-810) Package Converters for E(E)PROMs and FLASH etc (PLCC) Product Code Pins on skt Pins on Base Wiring Code Package Base pitch" Miscellaneous AD63 32 32 01 P .6 Clamshell Product Code Pins on skt Pins on Base

ST93C86

Abstract: d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS
Contextual Info: GALEP 4 - device support for GALEP32 software version 1.14.12 ! Bauteile im DIL Gehäuse benötigen keinen Adapter ! Devices in DIL package do not require any adapter -EEPROM