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    HY5117400B

    Abstract: HY5116400B HY5117400 4Mx4 DRAM
    Text: HY5117400B,HY5116400B 4Mx4, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


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    PDF HY5117400B HY5116400B HY5116400B HY5117400 4Mx4 DRAM

    PP-T20

    Abstract: HY5117400B bel power QBS
    Text: HY5117400B Series HYUNDAI 4M X 4-bit CM O S DRAM DESCRIPTION The HY5117400B is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY5117400B HY5117400B Y5117400B 4b750fl 1AD46-00-MAY9S GG0457E HY5117400BJ HY5117400BSLJ PP-T20 bel power QBS

    HY5116400BT

    Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
    Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC


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    PDF 256KX4) HY531000AJ HY531000ALJ HY534256AJ HY534256ALJ HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY5116400BT HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ hy51v65804 HY5117400BJ

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


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    PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260

    HY5117400BT

    Abstract: HY5117400B
    Text: HY5117400B, HY5116400B -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed random access of memory cells within the same row.


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    PDF HY5117400B, HY5116400B HY5117400BJ HY5117400BSLJ HY5117400BT HY5117400BSLT HY5116400BJ HY5116400BSLJ HY5116400BT HY5116400BSLT HY5117400B

    HY5117400B

    Abstract: 1AD4
    Text: HY5117400B Series “H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400B is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY5117400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY5117400B 12T/BSC 1A048-00-MAY9S 5117400BJ HY5117400BSLJ HY5117400BT 1AD4

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY5117400B ,H Y 5116400B 4Mx4, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -bit configuration w ith Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


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    PDF HY5117400B 5116400B

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


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    PDF 256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ