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    HY51V18164 Price and Stock

    SK Hynix Inc HY51V18164CJC-60

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    Bristol Electronics HY51V18164CJC-60 297
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    SK Hynix Inc HY51V18164CJC-60DR

    IC,DRAM,EDO,1MX16,CMOS,SOJ,42PIN,PLASTIC (Also Known As: HY51V18164CJC-60)
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    Quest Components HY51V18164CJC-60DR 1,000
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    HY51V18164CJC-60DR 1,000
    • 1 $1.875
    • 10 $1.875
    • 100 $1.875
    • 1000 $0.8625
    • 10000 $0.8625
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    HY51V18164 Datasheets Context Search

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    HY51V18164B

    Abstract: HY51V18164
    Text: HYM5V64124A Q-Series Unbuffered SO DIMM 1Mx64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOPII and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy


    Original     		PDF HYM5V64124A 1Mx64-bit 64-bit HY51V18164B HYM5V64124AQG/ATQG/ASLQG/ASLTQG DQ0-DQ63) 1CE16-10-APR96 144pin HY51V18164

    Untitled

    Abstract: No abstract text available
    Text: HY51V18164C,HY51V16164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY51V18164C HY51V16164C 1Mx16, 16-bit 1Mx16

    HY51V18164

    Abstract: hy51v18164c
    Text: HY51V18164C,HY51V16164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY51V18164C HY51V16164C 1Mx16, 16-bit 1Mx16 10/Sep HY51V18164

    HY51V18164C

    Abstract: No abstract text available
    Text: HY51V18164C,HY51V16164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY51V18164C HY51V16164C 1Mx16, 16-bit 1Mx16

    HY51V18164C

    Abstract: HY51V18164 hy51v18
    Text: HY51V18164C,HY51V16164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY51V18164C HY51V16164C 1Mx16, 16-bit 1Mx16 10/Sep HY51V18164 hy51v18

    HY51V18164B

    Abstract: hy51v18 HY51V16164B
    Text: HY51V18164B,HY51V16164B 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY51V18164B HY51V16164B 1Mx16, 16-bit 1Mx16 hy51v18 HY51V16164B

    Untitled

    Abstract: No abstract text available
    Text: • • H Y U N D A I * HY51V18164B,HY51V16164B > 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		PDF HY51V18164B HY51V16164B 1Mx16, 16-bit A0-A11) DQ0-DQ15)

    HY51V18164B

    Abstract: No abstract text available
    Text: «HYUNDAI HY51V18164B Series 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V18164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18164B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF HY51V18164B 16-bit 16-bit. 04711-20Cf) 1AD60-10-MAY95 HY51V18164BJC

    HY51V18164B

    Abstract: No abstract text available
    Text: H Y 51V 18164BSeries •HYUNDAI 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V18164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF 16-bit HY51V18164B 16-bit. 470C11 10X168} 4b750Ã 1AD60-10-MAY95

    Untitled

    Abstract: No abstract text available
    Text: “HYUNDAI HYM5V64124A R-Series Unbuffered 1M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 j.F


    OCR Scan     		PDF HYM5V64124A 64-bit HY51V18164B HYM5V64124ARG/ATRG/ASLRG/ASLTRG DQ0-DQ63) 62K1S 0157MOO)

    HY51V181648

    Abstract: No abstract text available
    Text: ‘ HYUNDAI HYM5V64224A X-Series 2M x 64-bit CMOS ORAM MODULE DESCRIPTION The HYM5V64224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY51V181648 in 42/42 pin SOJ and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22nF


    OCR Scan     		PDF HYM5V64224A 64-bit HY51V181648 16-bit HYM5V64224AXG/ASLXG/ATXG/ASLTXG 1ED01-10-AUG95 DQ0-DQ63)

    HYM5V64414

    Abstract: No abstract text available
    Text: As of ’96.3Q TYPE SIZE 8 -Byte 8M B DESCRIPTION. 1M x 64 EDO.SL D IM M PART HO. HYM5V64104AR/ATR SPEED REF. 60/70/80 4K H Y 51 V I6164BJ/BT x 4 IK HY51V18164BJ/BT x 4 IK HY51V18164BJ/BT x 4 HYM5V64124AR/ATR 1M x 72 Unbuffered EDO,SL,ECC HYM5V72A124AR/ATR


    OCR Scan     		PDF HYM5V64104AR/ATR HYM5V64124AR/ATR HYM5V72A124AR/ATR HYM5V64204AR/ATR HYM5V64214AF/ATF HYM5V64224AR/ATR I6164BJ/BT HY51V18164BJ/BT HY51V4404BJ/BT HYM5V64414

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM5V64124A Q-Series SO DIMM 1M _ X 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM m odule consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy printed circuit


    OCR Scan     		PDF HYM5V64124A 64-bit HY51V18164B HYM5V64124AQG/ATQG/ASLQG/ASLTQG 70Capacitance DQ0-DQ63) 1CE16-10-APR96

    HY51V18164B

    Abstract: HY51V18164
    Text: • 'H Y U N D A I HY51V18164B, HY51V16164B 1M x 16bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode


    OCR Scan     		PDF HY51V18164B, HY51V16164B 16bit HY51V18164BJC HY51V18164BSLJC HY51V18164BTC HY51V18164BSLTC HY51V16164BJC HY51V16164BSLJC HY51V16164BTC HY51V18164B HY51V18164

    hy51v18164b

    Abstract: No abstract text available
    Text: -HYUNDAI HYM5V64124A Q-Series SO DIMM 1M x 64-bit CMOS DRAM MODULE _with EXTENDED DATA OUT DESCRIPTION The HYM5V64124Ais a 1M x 64-bit ED O mode C M O S DRAM module consisting of four HY51V18164B in 42/42 pin SO J or 44/50 pin TSOP-II and one 2048 bit EEPR O M on a 144 Zig Zag Dual pin glass-epoxy printed circuit


    OCR Scan     		PDF HYM5V64124A 64-bit HYM5V64124Ais HY51V18164B HYM5V64124AQG/ATQG/ASLQG/ASLTQG 1CE16-10-APR96 HYM5V64124AQG HYM5V64124ASLQG

    hy51v18164b

    Abstract: No abstract text available
    Text: "H YU N D A I HYM5V72A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE _with EXTENDED DATA OUT DESCRIPTION The HYM5V72A224A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of two HY51V4404B in 20/26 pin SOJ or TSOP-II, four HY51V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168


    OCR Scan     		PDF HYM5V72A224A 72-bit HY51V4404B HY51V18164B HYM5V72A224ARG/ASLRG/ATRG/ASLTRG 1EC07-10-JUNS6

    5v RAS 0610

    Abstract: No abstract text available
    Text: •HYUNDAI HYM5V64124A R-Series Unbuffered 1M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO m ode CMOS DRAM m odule consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1


    OCR Scan     		PDF HYM5V64124A 64-bit HY51V18164B TheHYM5V64124ARG/ATRG/ASLRG/ASLTFiG DQ0-DQ63) 06-10-APR95 1EC06-10-MAR96 5v RAS 0610

    RAS 0610

    Abstract: ras - 0610 RAS- 0610 PA 0610 D5 HY51V18164 hy51v18164b
    Text: »HYUNDAI HYM5V72A124A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V72A124A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of two HY51V4404B in 20/26 pin SOJ or TSOP-II, four HY51V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168


    OCR Scan     		PDF HYM5V72A124A 72-bit HY51V4404B HY51V18164B 2048bit HYM5V72A124ARG/ASLRG/ATRG/ASLTRG DQ0-DQ71) 1EC06-10-APR95 RAS 0610 ras - 0610 RAS- 0610 PA 0610 D5 HY51V18164

    Untitled

    Abstract: No abstract text available
    Text: "HYUNDAI HY51V18164C, HY51V16164C 1M x 16bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode


    OCR Scan     		PDF HY51V18164C, HY51V16164C 16bit HY51V18164CJC HY51V18164CSLJC HY51V18164CTC HY51V18164CSLTC HY51V16164CJC HY51V16164CSLJC HY51V16164CTC

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I HYM5V72A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V72A224A is a 2M x 72-bit EDO mode CMOS DRAM module consisting of two HY51V4404B in 20/26 pin SOJ or TSOP-II, four HY51V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168


    OCR Scan     		PDF HYM5V72A224A 72-bit HY51V4404B HY51V18164B HYM5V72A224ARG/ASLRG/ATRG/ASLTRG 17itance DQ0-DQ71) 4b750flfl

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM5V64124A X-Series 1M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42pin SOJ or 44/50pin TSOP-II, two 16-bit and one 8-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed


    OCR Scan     		PDF HYM5V64124A 64-bit HY51V18164B 42/42pin 44/50pin 16-bit YM5V64124AXG/ASLXG/ATXG/ASLTXG DQ0-DQ63)

    hy51v18164b

    Abstract: No abstract text available
    Text: "HYUNDAI HYM5V32124A X-Series IM X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM5V32124A i s a l M x 32-bit E D O mode C M O S DRAM module consisting of two HY51V18164B in 44/50 pin TSO PII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22jiF decoupling capacitor is


    OCR Scan     		PDF HYM5V32124A 32-bit HY51V18164B 22jiF HYM5V32124ATXG/ASLTXG DQ0-DQ31) 1DC01-10-SEP95

    Untitled

    Abstract: No abstract text available
    Text: »fl Y U H Dfl I * HY51V18164C,HY51V16164C 1U xie, Extended Data O ut mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		PDF HY51V18164C HY51V16164C 16-bit 18-bit A0-A11) DQ0-DQ15)

    d 100 d

    Abstract: Y514100A HYM532220
    Text: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"


    OCR Scan     		PDF HYM5V64104AX/ATX HYM5V64124AX/ATX HYM5V64100AN/ATN HYM5V64100AX/ATX HYM5V64120AX/ATX HYMSV72103AN/ATN HYM5V72A100ATN HYM5V72A120ATX HY51V16164B HY51V18164BJ/BT d 100 d Y514100A HYM532220