Untitled
Abstract: No abstract text available
Text: Y U y n ai I N l U R U n i 256Kx HY514460B Sgngs 1 6 _b i t C M 0S DRAM w ith 2 CAS & W PB PRELIMINARY DESCRIPTION The HY514460B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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256Kx
HY514460B
16-bit
400mil
40pin
40/44pin
047HJ001
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 4 4 6 0 B S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS & WPB PRELIMINARY DESCRIPTION The HY514460B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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256KX
16-bit
HY514460B
400mil
40pin
40/44pin
1AC27-00-MAY94
4b750Ã
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r4kf
Abstract: HY53C464LS fr4k HY53C256LS HY531000J
Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S
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256Kx
64Kx4)
HY53C256S
HY53C256LS
HY53C256F
HY53C256LF
HY53C464S
HY53C464LS
HY53C464F
HY53C464LF
r4kf
fr4k
HY531000J
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HY5118160
Abstract: 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit
Text: “HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS 2. PRODUCT QUICK REFERENCE GUIDE
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256K-bits
HY53C256.
HY53C464
HY531000.
DB101-20-MAY94
HY5118160
256K 4bit DRAM
HY514260
HY51426
HY51V16100
HY531000
4K x 1 DRAM
256k 8bit
512k 4bit
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