HY57V1294020 Search Results

Contextual Info: HY57V1294020 4Banks x 8M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V1294020 is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V1294020 is organized as 4banks of

Contextual Info: HY57V1294020 4Banks x 8M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V1294020 is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V1294020 is organized as 4banks of

Contextual Info: HY57V1294020 4Banks x 8M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V1294020 is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V1294020 is organized as 4banks of

KM48S8030BT-GL

Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
Contextual Info: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.

HYM71V73C3201

Contextual Info: 32Mx72 bit SDRAM Registered DIMM N-Series with PLL & PC/133 SDRAM Specification Supporting based on 32Mx4 SDRAM, LVTTL, 4-Banks & 4K Refresh HYM71V73C3201 PRELIMINARY DESCRIPTION The HYM71V73C3201 N-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of

Contextual Info: 32Mx72 bit SDRAM Registered DIMM N-Series with PLL & PC/100 SDRAM Specification Supporting based on 32Mx4 SDRAM, LVTTL, 4-Banks & 4K Refresh HYM71V75S3201 PRELIMINARY DESCRIPTION The HYM71V75S3201 N-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of

HY57V16161

Abstract: hy57v168010b 1MX16BIT 4MX16
Contextual Info: •’HYUNDAI - • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE S D R A M Fart Numbering Ordering Information 3. DRAM DATA SHEETS 4M-bit S D R A M Page HY57V41610TC- 256Kx16-bit, 1K Ref. 2Bank, 3.3V-• Timing Diagram

Contextual Info: " H Y U N D A I • ^ HY 57V 1294020 4Banks x 8M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai H Y57V 1294020 is a 134. 217, 728bit C M O S Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth, H Y 57V 1294020 is organized as 4banks ot

PC100

Abstract: PC133 54-PIN HYM71V653201
Contextual Info: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH

PC100

Abstract: 54-PIN
Contextual Info: 2 . PR O D U C T Q U IC K REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X XX X X PRO DUCT Q UICK REFERENCE New SDRAM PART NUMBERING XX I : Industrial Tem perature E: Extended Tem perature HY NIX M EM OR Y SPEED PRODUCT G ROUP 57 : SDRAM s PROCESS & PO W ER SUPPLY

HYM71V75S3201TN

Contextual Info: 32Mx72 bit SDRAM Registered DIMM N-Series with PLL & PC/100 SDRAM Specification Supporting based on 32Mx4 SDRAM, LVTTL, 4-Banks & 4K Refresh HYM71V75S3201 PRELIMINARY Rev 0.2 DESCRIPTION The HYM71V75S3201 N-Series are high speed 3.3-Volt synchro-nous dynamic RAM Modules composed