HY57V2571620 Search Results

HY57V2571620

Abstract: HY57V25
Contextual Info: HY57V2571620 4Banks x 4M x 16Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V2571620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V2571620 is organized as 4banks of

Contextual Info: 16Mx64 bit SDRAM SO DIMM X-Series PC/100 SDRAM Specification Supporting based on 16Mx16 SDRAM, LVTTL, 4-Banks & 8K-Refresh HYM72V65M1631 PRELIMINARY DESCRIPTION The HYM72V65M1631 X-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 16Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a 144-pin Zig Zag

Hynix Cross Reference

Abstract: dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v
Contextual Info: DRAM Cross Reference DDR SDRAM Winbond P/N W946432AD W942504AH W942508AH W942516AH Density 64Mb 256Mb 256Mb 256Mb Org. 2Mx32 64Mx4 32Mx8 16Mx16 Samsung K4D62323HA K4H560438B K4H560838B K4H561638B Hynix Hyundai HY57V643220CT HY5DU56422T HY5DU56822T HY5DU561622T

Contextual Info: 16Mx64 bit SDRAM Unbuffered DIMM X-Series PC/100 SDRAM Specification Supporting based on 16Mx16 SDRAM, LVTTL, 4-Banks & 8K Refresh HYM72V651631 PRELIMINARY DESCRIPTION The HYM72V651631 X-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four

Contextual Info: 32Mx64 bit SDRAM SO DIMM X-Series PC/100 SDRAM Specification Supporting based on 16Mx16 SDRAM, LVTTL, 4-Banks & 8K-Refresh HYM72V65M3231 PRELIMINARY DESCRIPTION The HYM72V65M3231 X-Series are high speed 3.3-Volt Synchronous DRAM Modules composed of eight 16Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit E2PROM on a 144-pin Zig Zag