HY57V561620 Search Results

HY57V561620T

Abstract: HY57V561620
Contextual Info: HY57V561620T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V561620 is organized as 4 banks of

Contextual Info: IC INFORMATION Function DRAM CMOS Type HY57V561620BLT-H Model AVIC-DRV150 VDD1 1 54 VSS3 DQ0 2 53 DQ15 VDDQ1 3 52 VSSQ4 DQ1 4 DQ2 5 VSSQ1 6 DQ3 7 DQ4 8 VDDQ2 9 DQ5 10 DQ6 11 J 1/1 E 51 DQ14 A0-A11 : Address input BA0-BA1 : Bank select address DQ0-DQ15 : Data input/output

Contextual Info: HY57V561620B L T-I 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B-I is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16.

54PIN

Abstract: 54pin TSOP HY57V561620C HY57V561620CT HY57V561620ctp
Contextual Info: HY57V561620C L T(P) 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C(L)T(P) Series is organized as 4banks of 4,194,304x16.

HY57V561620

Abstract: HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620T HY57V561620T-8 HY57V561620T-H HY57V561620T-HP HY57V561620T-P HY57V561620T-S
Contextual Info: HY57V561620 L T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16.

HY57V561620C

Abstract: HY57V561620CT
Contextual Info: HY57V561620C L T(P) 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C(L)T(P) Series is organized as 4banks of 4,194,304x16.

Contextual Info: HY57V561620 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of

HY57V561620A

Abstract: HY57V561620AT-H HY57V561620AT
Contextual Info: HY57V561620AT 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V561620A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620A is organized as 4banks of 4,194,304x16.

HY57V561620CT-6

Abstract: HY57V561620C HY57V561620CLT-6 HY57V561620CLT-H HY57V561620CLT-K HY57V561620CT-8 HY57V561620CT-H HY57V561620CT-K HY57V561620CT-P HY57V561620CT-S
Contextual Info: HY57V561620C L T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16.

Contextual Info: HY57V561620HT 16Mx16-bit, SK Ref., 4Banks, 3.3V DESCRIPTION The HY57V561620HT is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620HT is organized as 4banks of 4,194,304x16.

HY57V561620B

Abstract: HY57V561620BT-H
Contextual Info: HY57V561620B L/S T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16.

HY57V561620B

Abstract: HY57V561620BT-H
Contextual Info: HY57V561620B L T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16.

256MO

Contextual Info: HY57V561620 L T 16Mx16-blt, 8K Ref., 4Banks, 3.3V DESCRIPTION The H Y 5 7 V 5 6 16 2 0 is a 2 68,435,456b it C M O S Synchronous DRA M , ideally suited for the main memory applications which require large m em ory density and high bandwidth. H Y 5 7 V 5 6 16 2 0 is organized as 4 banks of 4 ,1 9 4,30 4 x 16 .

HY57V561620HT

Contextual Info: HY57V561620H L T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620HT is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620HT is organized as 4banks of 4,194,304x16.

HY57V561620CT-7

Abstract: HY57V561620ct-6 hy57v561620ctp
Contextual Info: HY57V561620C L T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16.

HY57V561620

Contextual Info: HY57V561620 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of

Contextual Info: HY57V561620T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of

Contextual Info: HY57V561620C L T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16.

hynix hy

Abstract: 57v561620
Contextual Info: HY57V561620 L T-I 16Mx16-bitf 8K Ref., ABanks, 3.3V DESCRIPTION The Hynix HY 57V 561 620 is a 2 6 8 , 4 3 5 , 4 5 6 b i t C M O S S y n c h r o n o u s D R A M , i d e a l l y s u i t e d f o r t he M o b i l e a p p l i c a t i o n s which require low power co nsum ption

HY57V561620

Abstract: HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620T HY57V561620T-8 HY57V561620T-H HY57V561620T-HP HY57V561620T-P HY57V561620T-S
Contextual Info: HY57V561620 L T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16.

HY57V561620

Abstract: HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620T HY57V561620T-8 HY57V561620T-H HY57V561620T-HP HY57V561620T-P HY57V561620T-S
Contextual Info: HY57V561620 L T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16.

Contextual Info: HY57V561620B L/S T 4 Banks x 4M x 16Bit Synchronous DRAM Doucment Title 4 Bank x 4M x 16Bit Synchronous DRAM Revision History Revision No. History Draft Date 1.4 143MHz Speed Added July 14. 2003 Remark This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for

HY57V561620

Abstract: HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-S HY57V561620T-8 HY57V561620T-H HY57V561620T-S
Contextual Info: HY57V561620 L T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16.

refresh logic

Contextual Info: HY57V561620H 4 Banks x 4M x 16Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V561620H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620H is organized as 4banks of 4,194,304x16.