HY5DV651622TC-G55
Abstract: HY5DV651622 HY5DV651622TC
Text: HY5DV651622T 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM DESCRIPTION The Hynix HY5DV651622 is a 67,108,864-bit CMOS Double Data Rate DDR Synchronous DRAM, ideally suited for the point to point applications which require high bandwidth. HY5DV651622 is organized as 4 banks of 1,048,576x16.
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HY5DV651622T
16Bit
HY5DV651622
864-bit
576x16.
400mil
66pin
HY5DV651622TC-G55
HY5DV651622TC
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HY5DV651622
Abstract: HY*651622
Text: HY5DV651622 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM DESCRIPTION The Hynix HY5DV651622 is a 67,108,864-bit CMOS Double Data Rate DDR Synchronous DRAM, ideally suited for the point to point applications which require high bandwidth. HY5DV651622 is organized as 4 banks of 1,048,576x16.
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Original
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PDF
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HY5DV651622
16Bit
HY5DV651622
864-bit
576x16.
400mil
66pin
HY*651622
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HY5DV651622
Abstract: No abstract text available
Text: HY5DV651622 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM DESCRIPTION The Hyundai HY5DV651622 is a 67,108,864-bit CMOS Double Data Rate DDR Synchronous DRAM, ideally suited for the point to point applications which require high bandwidth. HY5DV651622 is organized as 4 banks of
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Original
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PDF
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HY5DV651622
16Bit
HY5DV651622
864-bit
576x16.
400mil
66pin
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hynix dram numbering
Abstract: DDR SDRAM HY DDR266A hynix hy HYNIX DDR200 DDR266 DDR266B DDR333 DDR400
Text: Last Updated: Oct. 2004 DDR SDRAM PART NUMBERING HY XX X XX XX X X X X X X X - XX X TEMPERATURE HYNIX MEMORY Blank : Commercial 0℃~70℃ E : Extended (-25℃~85℃) I : Industrial (-40℃~85℃) PRODUCT FAMILY 5D : DDR SDRAM SPEED D5 D43 D4 J M K H L PROCESS & POWER SUPPLY
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DDR500
DDR400
DDR333
DDR266
DDR266A
DDR266B
DDR200
hynix dram numbering
DDR SDRAM HY
hynix hy
HYNIX
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HY5DV651622
Abstract: HY5DV651622TC
Text: HY5DV651622 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM PRELIMINARY DESCRIPTION The Hyundai HY5DV651622 is a 67,108,864-bit CMOS Double Data Rate DDR Synchronous DRAM, ideally suited for the point to point applications which require high bandwidth. HY5DV651622 is organized as 4 banks of
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Original
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PDF
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HY5DV651622
16Bit
HY5DV651622
864-bit
576x16.
400mil
66pin
HY5DV651622TC
|
HY5DV651622
Abstract: No abstract text available
Text: HY5DV651622 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM DESCRIPTION The Hyundai HY5DV651622 is a 67,108,864-bit CMOS Double Data Rate DDR Synchronous DRAM, ideally suited for the point to point applications which require high bandwidth. HY5DV651622 is organized as 4 banks of
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Original
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PDF
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HY5DV651622
16Bit
HY5DV651622
864-bit
576x16.
400mil
66pin
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SDRAM 64MX64
Abstract: 2MX32 16MX8 8MX16 DDR266A
Text: I. TABLE OF CONTENTS TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE DDR SDRAM Part Numbering 11 Direct-Rambus DRAM Part Numbering 12 DDR SDRAM Module Part Numbering 13 Direct-Rambus DRAM Module Part Numbering 14 Ordering Information
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64M-brt
HY5DV651622T
HY5DU641622AT
HY5DV641622AT
HY5DU663222Q
HY5DU663222Q-7M
HY5DU643222AQ
4Mx16,
SDRAM 64MX64
2MX32
16MX8
8MX16
DDR266A
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hynix dram numbering
Abstract: DDR266A 200pin SO DIMM ddr 200pin SO DIMM HYMR26416H-XXX hynix hy 16MX8 HY5DV
Text: 2 . PR O D U C T Q U IC K REFERENCE PRODUCT QUICK REFERENCE New DDR SDRAM PAR f l'» * ’ 1 HY X X X XX XX X X X X X PRODUCT QUICK REFERENCE |gj j| XX SPEED HYNIX MEMORY PRODUCT GROUP 5D : DDR SDRAMs PROCESS & POWER SUPPLY 33 300MHz 36 275MHz 4 250MHz 43
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OCR Scan
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300MHz
275MHz
250MHz
233MHz
222MHz
200MHz
183MHz
166MHz
DDR266A
DDR266B
hynix dram numbering
200pin SO DIMM
ddr 200pin SO DIMM
HYMR26416H-XXX
hynix hy
16MX8
HY5DV
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