HYB3117805 Search Results

smd code marking yc 440

Abstract: siemens rw 152
Contextual Info: SIEMENS 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB5117805BJ/BSJ-50/-60 HYB3117805BJ(L)/BSJ(L)-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation

marking wl4

Abstract: smd marking AAAA marking code WL3 HYB3117805 HYB5117805 P-SOJ-28-4 smd code marking wl5
Contextual Info: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB5117805BJ/BSJ-50/-60 HYB3117805BJ(L)/BSJ(L)-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation •

HYB3117805BSJ

Abstract: Q67100-Q1151 Q67100-Q1152
Contextual Info: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB3117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time

HYB3117805BSJ

Abstract: Q67100-Q1151 Q67100-Q1152
Contextual Info: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB3117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time

Contextual Info: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70

Contextual Info: SIEMENS 2M x 72-Bit EDO-DRAM Module ECC - Module HYM 72V2005GS-50/-60 168 pin buffered DIMM Module * 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module for PC main memory applications * 1 bank 2 M x 72 organisation * Optimized for ECC applications

VT244A

Abstract: HYB3117805BSJ SOJ-28
Contextual Info: 2M x 72-Bit Dynamic RAM EDO Module ECC - Module HYM 72V2005GS-50/-60 168 pin buffered DIMM Module Preliminary Information • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 2 M x 72 organisation • Optimized for ECC applications

HYB3117805BSJ

Abstract: SOJ-28
Contextual Info: 2M x 72-Bit EDO-DRAM Module ECC - Module HYM 72V2005GS-50/-60 168 pin buffered DIMM Module Advanced Information • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 2 M x 72 organisation • Optimized for ECC applications •

HYB3117805BSJ

Abstract: SOJ-28
Contextual Info: 2M x 72-Bit EDO-DRAM Module ECC - Module HYM 72V2005GS-50/-60 168 pin buffered DIMM Module • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module for PC main memory applications • 1 bank 2 M x 72 organisation • Optimized for ECC applications

Contextual Info: SIEMENS 2M x 8-Bit Dynamic RAM 2k-Refresh Hyper Page Mode- EDO HYB 3117805BSJ(L)-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 ‘C operating temperature • Performance: -50 -60 -70 ÍRAC RAS access time 50 60 70

Contextual Info: SIEMENS 2M x 72-Bit Dynamic RAM EDO Module ECC - Module HYM 72V2005GS-50/-60 168 pin buffered DIMM Module Preliminary Information • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 2 M x 72 organisation • Optimized for ECC applications