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    9633E

    Abstract: 3107E-01 3520E-11 805E-01 853e HYB39S64800T max 8734E 1600E-03 SIEMEMS transistor 702E
    Contextual Info: INFORMATION NOTE IBIS MODELS FOR SIEMENS DRAM and SDRAMs 9.96 InfIBIS.DOC IBIS MODELS I/O-Buffer Information Specification IBIS Behavioral IBIS is an emerging standard for electronic behavioral specifications of digital integrated circuit input/output (I/O) analog characteristics. IBIS


    Original     		982e-01 814e-01 677e-01 602e-01 570e-01 640e-01 828e-01 126e-01 528e-01 027e-01 9633E 3107E-01 3520E-11 805E-01 853e HYB39S64800T max 8734E 1600E-03 SIEMEMS transistor 702E PDF

    3165805AT-60

    Abstract: Q67100
    Contextual Info: SIEMENS Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Ordering Code Page HYB 3116160BSJ-50 on request 618 HYB 311616QBSJ-60 on request 618 HYB 3116160BSJ-70 on request 618 HYB 3116160BST-50 on request 618 HYB 3116160BST-60


    OCR Scan     		3116160BSJ-50 311616QBSJ-60 3116160BSJ-70 3116160BST-50 3116160BST-60 3116160BST-70 3116165BSJ-50 3116165BSJ-60 3116165BSJ-70 3116165BST-50 3165805AT-60 Q67100 PDF

    HYB39S16400T

    Abstract: hyb39s16800t 314100BJBJL 3165805AT Siemens Multibank DRAM HYB5118160BS 4K x 1 DRAM
    Contextual Info: SIEMENS 4M Product View 4M Product View 4M DRAM 1M X 4 4M X 1 256kX 16 HVB 314100BJ/BJL HYB 314400BJ/BJL HYB314405BJ/BJL HYB 314171BJ/BJL HYB 314175BJ/BJL HYB 514100BJ/BJL HYB 514400BJ/BJL HYB 514405BJ/BJL HYB 314265BJ/BJL HYB 514171 BJ/BJL HYB 514175BJ/BJL


    OCR Scan     		256kX 314100BJ/BJL 314400BJ/BJL HYB314405BJ/BJL 314171BJ/BJL 314175BJ/BJL 514100BJ/BJL 514400BJ/BJL 514405BJ/BJL 314265BJ/BJL HYB39S16400T hyb39s16800t 314100BJBJL 3165805AT Siemens Multibank DRAM HYB5118160BS 4K x 1 DRAM PDF