HYMP112S64M Search Results

Contextual Info: HYMP112S64M8-E3/C4 SERIAL PRESENCE DETECT E3 Function described 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58~61 62 63 Number of SPD Bytes Written during Module Production

Contextual Info: HYMP112S64MP8-E3/C4 SERIAL PRESENCE DETECT E3 Function described 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58~61 62 63 Number of SPD Bytes Written during Module Production

Contextual Info: 128Mx64 bits DDR2 SDRAM SO-DIMM HYMP112S64 L M8 Revision History No. History Date 0.1 Defined Initial target spec. Apr. 2004 0.2 Corrected typo of pin assignment(#140), Deleted “Preliminary” Jul. 2004 Remark This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

Contextual Info: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. This Hynix unbuffered Slim Outline Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based

Contextual Info: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. This Hynix unbuffered Slim Outline Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based

Contextual Info: 128Mx64 bits DDR2 SDRAM SO-DIMM HYMP112S64 L MP8 Revision History No. History Date 0.1 Defined target spec. July 2004 Remark This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

M8C4

Contextual Info: 128Mx64 bits DDR2 SDRAM SO-DIMM HYMP112S64 L M8 Revision History No. History Date 0.1 Defined Initial target spec. Apr. 2004 0.2 1) Corrected typo of pin assignment(#140), Deleted “Preliminary” 2) Corrected Pin assignment table July 2004 Remark This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

HYMP564S64P6-E3

Abstract: DDR2-400
Contextual Info: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. This Hynix unbuffered Slim Outline Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based

Contextual Info: 128Mx64 bits DDR2 SDRAM SO-DIMM HYMP112S64 L M8 Revision History No. History Date 0.1 Initial Release. Apr. 2004 Remark This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

DDR2 sstl_18 class

Abstract: DDR2-400 DDR2-533 HYMP112S64MP8 HYMP512S64MP8 MO-224 PC2-3200 PC2-4300
Contextual Info: 128Mx64 bits DDR2 SDRAM SO-DIMM HYMP112S64 L MP8 Revision History No. 0.1 History 1) Defined target spec. 2) Corrected Pin assignment table Date Remark July 2004 This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

Contextual Info: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. This Hynix unbuffered Slim Outline Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based

128Mbx64

Abstract: HYMP564S64P6 HYMP564S64P6-E3 DDR2-400
Contextual Info: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. This Hynix unbuffered Slim Outline Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based