HYUNDAI DIODE Search Results
HYUNDAI DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUZ30V |
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Zener Diode, 30 V, USC |
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CUZ24V |
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Zener Diode, 24 V, USC |
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CUZ36V |
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Zener Diode, 36 V, USC |
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CUZ20V |
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Zener Diode, 20 V, USC |
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CUZ12V |
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Zener Diode, 12 V, USC |
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HYUNDAI DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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r56 ce
Abstract: OA81 marking code R66 GMS800 GMS81504 labtool 48 MARKING R00
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GMS81504 GMS81504 GMS800 28SOP) 16-bit r56 ce OA81 marking code R66 labtool 48 MARKING R00 | |
S20 K25
Abstract: D113 D114 D115 D116 D117 HL15703 SEG55
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HL15703 HL15703 80pply SEG56) SEG57) S20 K25 D113 D114 D115 D116 D117 SEG55 | |
D223 DIODE
Abstract: SEG55 lcd hyundai m d223 HL15604 D200 POWER DIODES D16813
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HL15604 HL15604 SEG55) SEG56) D223 DIODE SEG55 lcd hyundai m d223 D200 POWER DIODES D16813 | |
HL14203
Abstract: SEG40 diode D83
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HL14203 HL14203 SEG41) SEG42) SEG40 diode D83 | |
Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32. |
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HY57V653220B 32Bit HY57V653220B 864-bit 288x32. 11/Dec 400mil | |
Contextual Info: HY57V643220C 4 Banks x 512K x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V6V3220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V643220C is organized as 4banks of 524,288x32. |
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HY57V643220C 32Bit HY57V6V3220C 864-bit HY57V643220C 288x32. 400mil 86pin | |
hyundai lcd panel 10Contextual Info: HL14104 HL14104 LCD Driver Hyundai Electronics Industries System IC Division 1 HL14104 Contents 1. General Description 2. Features 3. Block Diagram 4. Pin Diagram 5. Pin Description 6. Serial I/O Data Format 7. Registers 8. Key Scan Function 9. LCD Function |
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HL14104 HL14104 SEG40) SEG41) hyundai lcd panel 10 | |
diode D83Contextual Info: HL14203 HL14203 LCD Driver Hyundai Electronics Industries System IC Division 1 HL14203 Contents 1. General Description 2. Features 3. Block Diagram 4. Pin Diagram 5. Pin Description 6. Serial I/O Data Format 7. Registers 8. Key Scan Function 9. LCD Function |
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HL14203 HL14203 SEG41) SEG42) diode D83 | |
Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32. |
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HY57V653220B 32Bit HY57V653220B 864-bit 288x32. 400mil 86pin | |
SCK 164
Abstract: 800T lcd hyundai DIODE D29 -08 diode D83 D150 transistor hyundai lcd panel 10 hyundai panel 10 key scan kin 52
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HL15604 HL14104 HL14104 SEG40) SEG41) SCK 164 800T lcd hyundai DIODE D29 -08 diode D83 D150 transistor hyundai lcd panel 10 hyundai panel 10 key scan kin 52 | |
Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32. |
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HY57V653220B 32Bit HY57V653220B 864-bit 288x32. 400mil 86pin | |
lcd hyundai
Abstract: d168 segment DIODE D180 DIODE D195 SEG55
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HL15604 HL15604 80QFP SEG55) SEG56) lcd hyundai d168 segment DIODE D180 DIODE D195 SEG55 | |
S20 K25
Abstract: lcd hyundai s20 K30
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HL15703 HL15703 80QFP SEG56) SEG57) S20 K25 lcd hyundai s20 K30 | |
SERVICE MANUAL tv hyundai
Abstract: SERVICE MANUAL tv hyundai 29" 42-SDIP GMS81504 t1oi S8160 he007h
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GMS81604/08 6000H S81608 SERVICE MANUAL tv hyundai SERVICE MANUAL tv hyundai 29" 42-SDIP GMS81504 t1oi S8160 he007h | |
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HY57V653220CContextual Info: HY57V653220C 4 Banks x 512K x 32Bit Synchronous DRAM Target Spec. DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32. |
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HY57V653220C 32Bit HY57V653220B 864-bit 288x32. 400mil 86pin HY57V653220C | |
P55i
Abstract: B0000h-BFFFF
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OCR Scan |
16Kbytes, HY29F800 16-bit 16-bit) P-55I, T-55I, R-551 P-55E, T-55E, P55i B0000h-BFFFF | |
14 pin cmos IMAGE SENSOR
Abstract: 27h TRANSISTOR "Image Sensor" analog pixel driver cmos image sensor color sensitive PHOTO TRANSISTOR hyundai Hyundai Semiconductor HB7122B 48 pin clcc
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HB7122B HB7122B 414X314 398X302 DA41990920R 14 pin cmos IMAGE SENSOR 27h TRANSISTOR "Image Sensor" analog pixel driver cmos image sensor color sensitive PHOTO TRANSISTOR hyundai Hyundai Semiconductor 48 pin clcc | |
FPN 2484
Abstract: hyundai 400X300 HB7121B HB7122B hyundai 14 pin cmos IMAGE SENSOR
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HB7121B HB7122B 414X314 400X300 DA21991011R FPN 2484 hyundai HB7121B hyundai 14 pin cmos IMAGE SENSOR | |
FPN 2484
Abstract: hyundai 14 pin cmos IMAGE SENSOR hyundai FPN 82 line cmos image sensor 400X300 HV7121B Hsync Vsync analog to digital convert sensor cmos CLCC 24 pin
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HV7121B HV7121B 414X314 400X300 DA41990615R FPN 2484 hyundai 14 pin cmos IMAGE SENSOR hyundai FPN 82 line cmos image sensor Hsync Vsync analog to digital convert sensor cmos CLCC 24 pin | |
Contextual Info: HYUNDAI HY29F080 Series 8 M eg ab it 1M x 8 , 5 -v o lt O n ly, Flash M em o ry KEY FEATURES 5-Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as low as 55 ns Low Power Consumption - 15 mA typical active read current |
OCR Scan |
HY29F080 S-128 HY29F080 | |
Contextual Info: « Y I I I I VI A I I U HY29F400T/B Series I I 11 f t I 4 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase Ready//Busy - Minimizes system-level power requirements - RY//BY ourput pin for detection of programming or erase cycle completion |
OCR Scan |
HY29F400T/B 48-Pin HY29F400 16-Bit) G-90I T-90I, R-90I G-90E, T-90E, R-90E | |
Contextual Info: •HYUNDAI HY29F002 Series 256K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase • - Minimizes system-level power requirements • • • Uses software commands, pinouts, and packages following industry standards for |
OCR Scan |
HY29F002 C-45I, T-451, R-451 P-45E, C-45E, T-45E, R-45E P-551, C-551, | |
Contextual Info: •HYUNDAI HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 120 ns access tim e Compatible with JEDEC-Standard Comm ands |
OCR Scan |
HY29F040 32-Pin HY29F040 120ns P-121, T-121, R-121 P-12E, | |
Contextual Info: HYU NDA I HV29F08° 8 M eg ab it 1M x 8 , 5 V o lt-o n ly , Flash M em o ry KEY FEATURES 5 Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as fast as 55 ns Low Power Consumption - 15 mA typical active read current |
OCR Scan |
HY29F080 |