HZM6.2Z Search Results

Contextual Info: HZM6.2Z4MFA Silicon Planar Zener Diode for Surge Absorb REJ03G0202-0100Z Rev.1.00 Mar.29.2004 Features • HZM6.2Z4MFA has four devices in a monolithic, and can absorb surge. • Low capacitance C = 4.0 pF Typ / 4.5 pF max and can protect ESD of signal line.

ADE-208-593A

Abstract: diode 62z DSA003643
Contextual Info: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-593A Z Rev.1 Nov. 2001 Features • HZM6.2ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

diode 62z

Abstract: surge absorb HZM6.2ZWA
Contextual Info: HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-499 Z Rev 0 Features • HZM6.2ZWA has two devices, and can absorb external + and -Surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-593 Z Rev 0 Features • HZM6.2ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-499 Z Rev 0 Features • HZM6.2ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HZM6.2ZMFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-1515 Z Rev.0 May. 2002 Features • HZM6.2ZMFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

HZM6.2Z4MFA

Contextual Info: HZM6.2Z4MFA Silicon Planar Zener Diode for Surge Absorb REJ03G0202-0100Z Rev.1.00 Mar.29.2004 Features • HZM6.2Z4MFA has four devices in a monolithic, and can absorb surge. • Low capacitance C = 4.0 pF Typ / 4.5 pF max and can protect ESD of signal line.

SC-59A

Abstract: HZM6.2ZMWA
Contextual Info: HZM6.2ZMWA Silicon Planar Zener Diode for Surge Absorb REJ03G1208-0100 Previous: ADE-208-1514 Rev.1.00 Jun 08, 2005 Features • HZM6.2ZMWA has two devices in a monolithic, and can absorb surge. • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line.

REJ03G1207-0100

Contextual Info: HZM6.2ZMFA Silicon Planar Zener Diode for Surge Absorb REJ03G1207-0100 Previous: ADE-208-1515 Rev.1.00 Jun 08, 2005 Features • HZM6.2ZMFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line.

diode 62z

Abstract: Hitachi DSA00217
Contextual Info: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-593 Z Rev 0 Nov. 1997 Features • HZM6.2ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

diode 62z

Contextual Info: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-593 Z Rev 0 Features • HZM6.2ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C = 8.5pF max) and can protect ESD of signal line. • MPAK-5 package is suitable for high density surface mounting and high speed assembly.

diode 62z

Contextual Info: HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-499 Z Rev 0 Features • HZM6.2ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C = 8.5pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HZM6.2Z4MFA Silicon Planar Zener Diode for Surge Absorb REJ03G0202-0100Z Rev.1.00 Mar.29.2004 Features • HZM6.2Z4MFA has four devices in a monolithic, and can absorb surge. • Low capacitance C = 4.0 pF Typ / 4.5 pF max and can protect ESD of signal line.

Contextual Info: HZM6.2ZMWA Silicon Planar Zener Diode for Surge Absorb REJ03G1208-0100 Previous: ADE-208-1514 Rev.1.00 Jun 08, 2005 Features • HZM6.2ZMWA has two devices in a monolithic, and can absorb surge. • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line.

Contextual Info: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-593 Z Rev 0 Features • HZM6.2ZFA has four devices, and can absorb external + and -Surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

diode 62z

Abstract: Hitachi DSA002788
Contextual Info: HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-499 Z Rev 0 Features • HZM6.2ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C = 8.5pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HZM6.2Z4MWA Silicon Planar Zener Diode for Surge Absorb REJ03G0368-0100 Rev.1.00 Oct 01, 2004 Features • HZM6.2Z4MWA has two devices in a monolithic, and can absorb surge. • Low capacitance C = 4.0 pF Typ / 4.5 pF Max and can protect ESD of signal line.

Contextual Info: HZM6.2ZMFA Silicon Planar Zener Diode for Surge Absorb REJ03G1207-0100 Previous: ADE-208-1515 Rev.1.00 Jun 08, 2005 Features • HZM6.2ZMFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line.

Contextual Info: HZM6.2Z4MWA Silicon Planar Zener Diode for Surge Absorb REJ03G0368-0100 Rev.1.00 Oct 01, 2004 Features • HZM6.2Z4MWA has two devices in a monolithic, and can absorb surge. • Low capacitance C = 4.0 pF Typ / 4.5 pF Max and can protect ESD of signal line.

diode 62z

Abstract: SC-59A Hitachi DSA0021 Hitachi DSA00217
Contextual Info: HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-499 Z Rev 0 Feb. 1997 Features • HZM6.2ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-593 Z Rev 0 Features • • • HZM6.2ZFA has four devices, and can absorb external + and -surge. Low capacitance (C=8.5pF max) and can protect ESD of signal line. MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

diode 62z

Abstract: DSA003642 hzm62z
Contextual Info: HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-499A Z Rev.1 Nov. 2001 Features • HZM6.2ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.

w410

Abstract: 62z zener
Contextual Info: HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-499 Z Rev 0 Features • • • HZM6.2ZWA has two devices, and can absorb external + and -surge. Low capacitance (C=8.5pF max) and can protect ESD of signal line. MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HZM6.2Z4MWA Silicon Planar Zener Diode for Surge Absorb REJ03G0368-0100 Rev.1.00 Oct 01, 2004 Features • HZM6.2Z4MWA has two devices in a monolithic, and can absorb surge. • Low capacitance C = 4.0 pF Typ / 4.5 pF Max and can protect ESD of signal line.