I PT 0 0 7N 0 6 N Search Results

Contextual Info: REVISIO NS A J DNEN90N5 ARE IN INCHES FIG. 1 -0 1 : ONE PLACE DECIMALS: ± .1 TWO PLACE DECIMALS: ± .01 THROUGH HOLE - N O. OF POS. x .0787 [2.00] ± .005 [.13] (SEE NOTE 7) DO NO T SCALE FROM THIS P R IN T X 2 mm - - < L - 01 : IN PROCESS SM M -XX-D-S m m -m -n -n

Contextual Info: 6 I 4 5 AP PR O V ED : DATE: _ TITLE: n cq 2,54 ! 'ten* W vD CD CO Ö 3 P IN BRASS 1 G OLD 2 IN S U L A T O R TEFLO N' 1 NONE 1 BO DY BRASS 1 G O LD NO. D E S C R IP T IO N M A T E R IA L Q ’T Y F IN IS H 6 5 ö T 0L 4 -Key I A lM T description 5217

Q300

Abstract: A600 GLLC01C
Contextual Info: F O - 5 5 1 1 1 -A HONEYWELL PART NUMBER GLLC01C REV DOCUMENT B 0016843 CHANGED KRB BY 0 7N O V 05 CHECK RJ N O M IN A L T R A V E LS Item s PLATED COPPER ALLOY 010 .393 -10 (.393) B OF (max) fOoeratina force) RF (min) (Release force) PT (max) (Pre-Travet)

Contextual Info: DWG NO: REVISIONS I AD I FIG. -0 1 : 1 ONE PLACE DECIMALS; ± .1 TWO PLACE DECIMALS: ± .01 THROUGH HOLE THREE PLACE DECIMALS: ± .0 0 5 FOUR PLACE DECIMALS: ± .0 0 2 0 - N O . OF POS. x .0 7 8 7 [2 .0 0 ] ± ,0 0 5 [.1 3 ] - 2 mm ANGLES ± H S O C K E T STRIP

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01116 (XN1116) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Basic Part Number 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu

Contextual Info: 9 2 NOTES: j 1. HOUSING MATL. POLYESTER PBT 15% GLASS FILLED TO UL 94 V-0, BLACK. 2. TER. MATL. BRASS 0.28 /.0 11 THK PLATING. TIN: (l.2 7u m )/50 u" MIN NICKEL UNDER ( 4 - 6 u m ) / I6 0 - 2 4 0 U " TIN 3. APPL. CLASS TO DIN 40040 HME C-25°C/+ I00°C) 4. PIN PUSH FORCE MIN 7N

G2JS

Abstract: 2SC4550 Immo transistor t 2190 U/25/20/TN26/15/850/G2JS
Contextual Info: ~r — $ • y — h /\°7 - Silicon Power Transistor 2SC4550 N 2 S C 455o iî , i i i i x - f P N I f c - v i - v - r m ÿ X j ' t ' L ow VcE sat Iife i ^ t L v x m T . i l ' J f i ÿ y ì i i i i r t z ' - t v - h \ - 7 7 > ' / X > m ^iO T" D C /D C ^ > /S;'— Ÿ ^?~T y7

DIP20

Abstract: TSSOP14 TSSOP16 196-M
Contextual Info: [ 1 5 ] fâlI'É7~‘—£ TOSHIBA U W ft 6ooc n m m fît i t m Psi & Pt m* h Ea = 0.8eV (pcs) 60°C (Fit) 17660 1 8 6 1 .2 3 x 1 0 6 6 2.3 & m m ft Ta = 125°C V c c = 6V is] >m ¡£ ÍÍE -f y 7 Ta = 125°C V c c = 6V Ta = 150°C V c c = 6V IS] /im fa

Contextual Info: HB56U832 Series, HB56U432 Series 8,388,608-word x 32-bit High Density Dynamic RAM Module 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-736A Z Rev. 1.0 Feb. 7, 1997 Description The HB56U832 is a 8M x 32 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM (HM5117405)

Contextual Info: Preliminary Technical Information GenX3TM 1200V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH50N120C3 High speed PT IGBTs for 20 - 50 kHz switching 1200V 50A 4.2V 64ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

TIL78

Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

2SC4175

Abstract: M-0262
Contextual Info: > IJ 3 V h =7 > Silicon T ra n sisto r N & P N ¡ 5 m I r ì ' T x & J l ' ì & cf c V ì s 'm V & m □ > . X ' = 7 > i> h f - m y f > W o ' , Ï I mm) ' ' i 7* 1) -y KICffl t L T J r i i l T ' t o 2 .1 ± o . i o ^ ffi'II.f Ini ArfeH t s = 2 0 ns MA X .

Contextual Info: DWG. I 0. S D -5 5 5 6 0 -0 0 6 DO NOT SCALE DRAWING REVISED J2010-17A1 J DRWN: Y.ONO '10/03/01 CH'K: S.MARUYAMA _APPR= S.MARUYAMA ec co REVISED J2010-1529 DRWN: Y.ONO '10/01/27 CH'K: S.MARUYAMA APPR: M.SASAO ec H no . no . REVISED G EC NO. J 2 0 0 3 - 2 5 I7

ail4m

Abstract: FIM1L4M 1h0565 M31 marking transistor TRANSISTOR IFW la 5531 FN1L4M
Contextual Info: ± I /7N I ih Compound Transistor F N 1 L4 M i&ijtrtMPNPxfc 4# .' mm it o ^ r x L ^ ^ L T v ^ - r . 2 . 8 + 0.2 R i = 47 k£2, R 2= 47 kQ) o F A 1 L 4 M t 3 y y >J 9 y ? ') (T a = H £ to 2 5 °C ) B& g ^r 5e #r # z V CBO -6 0 V =i W 9 9 • J- = -y 9m 'M l±

VM-34AB

Abstract: VM130-01-08 VM131-01-01S VM230-02-34R VFM300 VM132-M5-33 VM120-01-00 VM130-01-32R VR2110 VG32
Contextual Info: Mechanical Valve VM Series Model Dimensions mm VM1000 Side piping Bottom piping 11 X 36 X 16 11 X 28 X 25 VM100 Side piping Bottom piping 17 X 44 X 25 17 X 44 X 30 VM200 25 X 40 X 52 Basic Roller Lever One Way Roller Lever Straight Plunger Roller Plunger

2SK822

Abstract: 2sk82
Contextual Info: M MOS o s M u n t t o ^ r ? - F ie ld E ffe ct P o w e r T ra n s is to r 2SK822 N ft^ ;U / '° 7 j i m 2S K8 2 2 i, FET m N f t i w i / X > A > X S > h M ''*'r7 — MOS F E T V * V ffiÎÆ ^ fS < , 7 f > / m # -M O S X ' i v f- > (^ - ii 0 , it lH iS x ^

jb 5531

Abstract: JV19 mk 5013 2SA1395 2SC3567 T108 TC-5915 T-25-TS x11A
Contextual Info: 5 P — S 7 • 5^— K SEC m '> « ;□> yxor7 S ilic o n P o w e r T ra n s is to r f * T i\ r x 2SC3567 lif f l h'/-? < 7- 2 S C 3 5 6 7 i i i f F i l Ë l ï i X -i v & y ÿ " m t l- 7 > x x n - , X ^ y f > 7 - u J f i U - i ' , 0 H Ï2 IH Jp - fï : m m

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01116 Silicon PNP epitaxial planar type For digital circuits • Package • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)

Transistor BC 227

Abstract: transistor bc 541 JT MARKING MSA 0154 fnil4m bc 107 transistor b0299 f b f 41 s p s 7 n 60 b TRANSISTOR BC 456 FA1L4M
Contextual Info: L I .7\ I IK V • NEC Æ C o m p o u n d T ra n s is to r m = * = r iv r x FAI L4M W at /ScNPN m m h^ 9 *S it ^ - iî O ^ M T x f f i t f C 4-1*1 j l L T ^ i - T o ( R ! = 47 k f ì , ; mm 2 . 8 + 0.2 R 2 = 47 k Q ) 0.65TS: 1.5 o F N 1L 4M t ^ >7 °')/ > 9 '} T'f-ÏJi] T" ë i T 0

2SB799

Abstract: jl-026 5491B 2SD1000 2SD100 h5ms TEB-528 2SD1000
Contextual Info: • ~ / - h S ilico n T r a n s is to r 2SB799 n T if ili m . O t — T 'i t T K 7 > A # ÌÈ . • mm ^ I x U S iS 'ü - f □ o 2SD 1000 t 3 > T U 9 > 9 ') T-~t0 O ^ T P r f r ± è (. i77j É Ì l + . T ' " Ì ~ o P t = 2.0 W(0.7 mmX 16 cm2-fe7 ì •/y7 6'ÌÌ;fflH#), V Ceo > — 50 V

pa1476h

Abstract: PA1476H nec PA1476 UPA1476H R2 KL
Contextual Info: ^ / \ ° 7 - C o m p o u n d P o w e r T ran s is to r AR R A Y / j P NPNX ¥ 7 1 4 7 6 -V J IM 'S V =3> /^P A 1 476ti 4 * Ÿ r t M N P N S ÿ > v 'X £ T U -f T% 7°U > 2 • £ -f 7° 7 -i 2 • 7 A (3 M & : m m ? V 5 U • E C R U C O g l U ^ i î ^ , VTR • 7 v

2SB624

Abstract: 2SD596 marking ll
Contextual Info: NEC Silicon T ran sisto r S ïf/ \ T 7 2SB624 P N P i t f f + S s T J U M S s y □> h # it 9 K w m ' , W V ' J v K IC ffl > L - riftilT - T o o h FE* fÎ 5 ^ 0 hpE : 200 T Y P . V 2 .8 ± 0.2 1.5 = - 1 .0 V , I c = -100 mA) c e O 2SD596 t =i > 7 °'l 9 > 9 'J T t o

Contextual Info: Preliminary ßEROFLEX Cl HCUIT TECHNOLOGY Features www.aeroflex.com/act1.htm • +5 / ±12 Volt Supply Operation General Description • Low Power Dissipation • Small Size & Light Weight • Dual Transceivers Saves Space & Cost • Outstanding MIL-STD-1553 performance

d78310

Abstract: D78312 d78p312a d78312a D78310A iPD78312A MANUAL ANDO AF-9704 EPROM PROGRAMMER pD78312 nec 78312 a PD78312A
Contextual Info: D ATA S H E E T MOS INTEGRATED CIRCUIT jüPD78310A A , 78312AIA) 16/8 BIT SINGLE-CHIP M ICROCOM PUTER The^PD78312A(A) is a CMOS 16/8-bit microcomputer. It contains a high-performance 16-bit CPU, enabling highly advanced internal arithmetic/logical operations. Up to 56K bytes of external memory can be added.