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    Untitled

    Abstract: No abstract text available
    Text: Panasonic 7nt3.— 0hW&iv?yv y y 7 R - O 5 7 J I / 5 L i m i V x V Aluminium Electrolytic Capacitors/S Surface Mount Type Aluminium Electrolytic Capacitors Japan t t S e rie s :S Type: V « «5¡? mmm Surface mount type • • • ■ • m Features & £


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    I000B

    Abstract: 41000B-10L 5m41000 41000BP M5M41000
    Text: MITSUBISHI LSIs M5M41000BP,J,L,VP,RV-7L,-8L,-10L F A S T PAGE MODE 1 04 8 5 7 6 -B IT 1 0 4 8 5 7 6 -W O R D BY 1-BIT DYNAMIC RAM D ESCRIPTIO N PIN C O N F IG U R A T IO N (TOP VIEW) This is a fa m ily of 1048576-word b y 1-bit d y n a m ic R A M s , fab ricated w ith the high perform ance C M O S process, and


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    PDF M5M41000BP 1048576-word M5M41000BP, 1048S76-BiT 1048S76-W 048576-W 1048576-BIT I000B 41000B-10L 5m41000 41000BP M5M41000

    Untitled

    Abstract: No abstract text available
    Text: Panasonic 5 Î/ Series: Type: Style: Aluminium Electrolytic Capacitors/NHG Aluminium Electrolytic Capacitors Radial Lead Type JU U - 7 NHG A (Radial Leads) 04/JIS C 5141 Japan Standard • 45 f t Features • S ttN H E v U -X '£ 3 0 % ~ 4 0 % /M 2 ft • ^aENFPeB : 105 °C 2000 h


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    PDF 04/JIS

    Untitled

    Abstract: No abstract text available
    Text: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Power consumption:


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    PDF LH531000B-S 28-pin, 450-mil 28-PIN I000B OP028-P-0450)

    MCS51 ASSEMBLER

    Abstract: MCS-51 assembler intel MCS-51 ap-69 intel Publication number 9800937 MCS48 instruction set 8031 program reader INTEL 8049 IC mcs48 assembly language The Expanded MCS-48 System intel 8751 architecture
    Text: 1 AP-69 VSS P 1 .0 C 1 40 ID vcc P1.1 C 2 39 Z3 po.o P 1 .2 C 3 38 I3 P 0 .1 37 □ P0.2 P 1 .3 C 4 P 1 .4 C Z 5 P 1 .5 C 36 3 6 8 9 P3 0 R X D C 10 P 3 .1 /T X D C 11 P 3 .2 /IN T O C 12 P 3 .3 .ÍÑ T ÍC 13 P0.3 35 ID P 0 .4 34 ID P 0 .5 P1.6 CZ 7 P1.7 c


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    PDF AP-69 MCS-48â MCS-51â AFN-01502A-32 MCS51 ASSEMBLER MCS-51 assembler intel MCS-51 ap-69 intel Publication number 9800937 MCS48 instruction set 8031 program reader INTEL 8049 IC mcs48 assembly language The Expanded MCS-48 System intel 8751 architecture

    Untitled

    Abstract: No abstract text available
    Text: >i M C -421000B 9 -| 0 4 8 5 7 6 x 9-B IT c m o s d y n a m ic r a m m o d u le w NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The MC-421000B9 is a nibble-m ode 1,048,576-word by 9-bit CMOS dynam ic RAM m odule designed to operate


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    PDF MC-421000B9 576-word /PD421001 MC-421000B9

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs MH2M04BJ-7, -8, -10/ MH2M04BJA-7, -8,-10 FAST PAGE MODE 1 0 4 8 5 7 6 -W 0 R D BY 8 -B IT DYNAM IC RAM DESCRIPTION The MH2M04BJ, JA is 1048576 word x 8 bit dynamic RAM and consists of eight industry standard 1M x 1 dy­ namic RAMs in SOJ. The mounting of SOJ on a single in-line package pro­


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    PDF MH2M04BJ-7, MH2M04BJA-7, MH2M04BJ, 41000B -10/MH2M04BJA-7 -10/MH2M04BJA-7,

    sharp mask rom 44-pin

    Abstract: 1417D lh53
    Text: CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate C M O S process technology. • Access time: 150 ns (MAX.)


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    PDF 28-pin, 600-mil 450-mil 44-pin, 14x14 44-PIN LH531000B 28-PIN sharp mask rom 44-pin 1417D lh53