I403 Search Results

5458

Abstract: I403
Contextual Info: OCXO I403 Series Square 26 mm TTL/HCMOS STANDARD SPECIFICATIONS Frequency Cut Output 2.500 to 20.000 MHz AT , SC TTL/HCMOS Compatible ‘0’= 0.4 Vdc Max., ‘1’=2.4 Vdc Min. ‘0’=0.1 Vcc Max., ‘1’=0.9 Vcc Min. 50%±5% <10 ns Level Duty Cycles Rise/Fall Time

mv1401

Abstract: rn550
Contextual Info: MOTOROLA MV1401, MV I403, MV1404, MV1405, SEMICONDUCTOR TECHNICAL DATA H H H H Tuning Diodes H IG H T U N IN G R A T IO V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S SILICON HYPER-ABRUPT TUNING DIODES . . . designed w ith high capacitance and a capacitance change of

TRANSISTOR BC 545 smd

Abstract: IRFN350 irfn44 IRFMG50 IRFN044 IRFN9040
Contextual Info: Data Sheet No. PD-9.711A INTERNATIONAL RECTIFIER llORI REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG5Q N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET Product Summary T h e HEXFE T® technology is the key to International Part Num ber BV q s s Rectifier’s advanced line of power M O S F E T transistors.

Contextual Info: 13 12 11 10 9 CIRCUIT SIZE "A1 J 04 06 I I0 p I2 I4 H I6 I8 J3 20 G 22 24 C .512 .118 .472 13.00 3 .0 0 12.00 .6 3 0 .2 3 6 6 .0 0 .5 9 0 15.00 .748 •354 .709 19.00 9 .0 0 18.00 .8 6 6 .472 2 2 .0 0 12.00 .827 21.00 ■984 .5 9 0 2 5 .0 0 15.00 2 4 .0 0

r9824

Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16

IRF5505

Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
Contextual Info: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT

APPLE A6 CHIP

Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
Contextual Info: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6

1404A shift

Abstract: 1403A shift register 1404a AM2802DM AM1403AHM am2804pc AM1402A AM2804 1402A AM2803HC
Contextual Info: Am1402A/Am1403A/Am1404A Am2802/Am2803/Am2804 1024-Bit Dynamic Shift Registers Distinctive Characteristics Both m ilitary and commercial grade devices available • Quad 256-bit, dual 512-bit, single 1024-bit • 10 MHz frequency operation guaranteed for A m 2802,

UTM ceramic RESISTOR 212-3

Abstract: AD2033 rs 380sh NyQuist 3 axis DAX 3S OP27GN IC BD 540 LYS HTC Desire 816 Dual SIM HTC A5 12SmV cmos cookbook Monsanto 7 segment displays
Contextual Info: General Information ANALOG DEVICES DATA-ACQUISITION DATABOOK 1984 VOLUME I INTEGRATED CIRCUITS Table of Contents Ordering Guide Q Operational Amplifiers Instrumentation & Isolation Amplifiers c Analog Signal Processing Components m a Voltage References Temperature Measurement Components

Contextual Info: PS SERIES 2,54/3.96mm Dttch c« »*•’*Card Edge Connectors ■ORDERING CODE PS42— 44D— 6013— 2 ign number (tor internal use only) No. of poles (No. of leads = No. 2 poles x 2) Terminal type D = Solder dip P an H o . Contact arrangement 4 = Independent contacts on both sides

Contextual Info: NTC THERMISTORS F E N W A L D E L E C T R O N IC S I N C O R P O R A T E D DISCS _ FEATURES • PC. board mountable ■ Lo w cost FIG. I U N C O A TED ■ Rugged design ■ Solderable leads ■ Versatile ■ Available on tape and reel FIG. 2 EPOXY COATED

ic LB1403

Abstract: LB1403 IC 4822 LBI403 lb 1423 n k 1413 40314 FRIA
Contextual Info: L B 1 4 0 3 , 1 4 2 3 , 1 4 1 3 1 4 3 3 IJ ' > ' y m& * vu -?m. ac • * — 9% %<n DC *#* n i x * mm / / •51 co LED CJ: 9 A ^ * * i£ a r * S M * f C * ^ r $ 3>. • M 7 '/ 7 ./ / irl^J/iRU T t ' 6 r c i* AC* DC .* *t ^ -< ;M <-i a r « (0 s:- •

I403

Abstract: 39440
Contextual Info: 13 12 PLUG PART NO. ENG. NO. II iO 3191 RECEPTACLE P A R T NO. ENG. NO. 19-09-2048 19-09-2049 19-09-2047 3 I9 I-4 P 19-09- 1049 319 M P I 3 19 I-4P-A 19-09- 1046 19-09-2046 3 I9 I- 4 PI- A 3 19 M R 1 3 19 I-4R 1-A LEGEND 3 191 C IR C U IT S IZ E — P = PLUG

Transformer EI-41

Abstract: EI TRANSFORMER LIST noryl SE1 J PX1700 KA12A120100044U thermal fuse 125 250V 2A E216698 S3 2A 250V
Contextual Info: Part N o: DPA 1201 00-P1-TK -Description: Power Supply C U I INC Date: 8/ 4 / 0 4 Unit: mm page N o; -, of 6 TEST DATA SA M PL E IT E M Primary Exciting C urrent Input 120 V A C , 60 Hz Primary Load C urrent

402P

Contextual Info: DIONICS INC. 6 5 R U S H M O R E S T ., W E S T B U R Y , N Y 11590 5 1 6 » 9 9 7 *7 4 7 4 HIGH VOLTAGE SILICON PNP TRANSISTOR ARRAYS Dl 402P fÿl The Dionics Dl 402P, Dl 602P and Dl 802P Series of High Voltage PNP Transistor arrays are specifically designed for plasma

LH202

Abstract: LH293 motorola mca nor gate using TTL transistor I400 I403 LH201 h54 motorola mpa1
Contextual Info: Ami 850 Mixed ECL/TTL I/O Mask-Programmable Gate Array PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Up to 1800 equivalent gates - 72 internal cells - Up to 80 l/O s H igh-perform ance, low -pow er ECL internal gates - W orst case T pd = 1.2 ns oo cn Large m acrocell library containing over 150 functions

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Motorola mc14433

Abstract: MC1503 1403U 1403 Motorola 1503U MCI403 MC1403AU MC1503U MC1403U mc1403bd
Contextual Info: MOTOROLA MC1403,A MC1503 SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE REFERENCE PRECISION LOW VO LT A G E REFERENCE A precision band-gap vo lta g e reference designed fo r critical in stru m e n ta tio n and D/A co n ve rte r app licatio n s. This u n it is designed to w o rk w ith M o to ro la MC1508 and MC3510 D/A c o n ­

IRLM2402

Abstract: c4977 cf325 NEC c5292 VD357 C5292 nec NEC "C4305" cf406 C4934 C5248
Contextual Info: 8 6 7 2 3 4 5 CK APPD FINO M23 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 19 397409 ENGINEERING RELEASED

SMC1602

Abstract: SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900
Contextual Info: 8 6 7 C B A PAGE PDF 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 2 3

trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Contextual Info: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .

Contextual Info: NTC THERMISTORS F E N W A L D E L E C T R O N IC S NTC / PTC Thermistors DISCS FEATURES 1 PC. board mountable • Low cost FIG. I UNCOATED ■ Rugged design ■Solderable leads 1 Versatile ■Available on tape and reel FIG. 2 EPOXY COATED ■ . 1 inch to .4 inch diameter

1403A shift register

Abstract: AM1403APC AM2802DM AM1403AHM AM1402A AM2802DC V11C AM1402ADM AM1402APC AM2802PC
Contextual Info: Am1402A/Am1403A/Am1404A Am2802/Am2803/Am2804 1024-Bit Dynamic Shift Registers Distinctive Characteristics Both m ilitary and commercial grade devices available • Quad 256-bit, dual 512-bit, single 1024-bit • 10 MHz frequency operation guaranteed for A m 2802,

ISL6258

Abstract: Diode C1280 c1295 battery C2240 3A967 820-2179 U4900 u3150 OZ9956 g5551
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN SCHEM,MLB,M82 PVT 11/14/2007 ENG APPD DESCRIPTION OF CHANGE DATE DATE