I4821 Search Results
I4821 Price and Stock
Anytek Technology Corporation Ltd YI4821510000GTERM BLK 12P SIDE ENT 5.08MM PCB |
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YI4821510000G | Bulk | 2,004 |
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YI4821510000G |
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Amphenol Corporation YI4821510000G- Bulk (Alt: YI4821510000G) |
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YI4821510000G | Bulk | 111 Weeks | 2,004 |
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YI4821510000G |
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YI4821510000G | 16 Weeks | 2,004 |
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HAHN BV EI 482 1244Transformer: encapsulated; 12VA; 230VAC; 24V; 500mA; PCB; BVEI |
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BV EI 482 1244 | 63 | 1 |
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HAHN BV EI 482 1242Transformer: encapsulated; 12VA; 230VAC; 15V; 15V; 400mA; 400mA; PCB |
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BV EI 482 1242 | 36 | 1 |
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HAHN BV EI 482 1238Transformer: encapsulated; 12VA; 230VAC; 9V; 9V; 667mA; 667mA; PCB |
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BV EI 482 1238 | 36 | 1 |
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I4821 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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200w power amplifier circuit diagramContextual Info: M ay 1997 Micro Linear ML4821 Powef Factor Controller GENERAL DESCRIPTION FEATURES The M I4821 provides complete control for a “boost" type power factor correction system using the average current sensing method. Special care has been taken in the design |
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I4821 ML4821 120pF 91ktt 825kft 1N5406 750pF ML4821CP 200w power amplifier circuit diagram | |
Contextual Info: Large Area >8 kV SiC GTO Thyristors with innovative Anode-Gate designs Siddarth G. Sundaresan, Hany Issa, Deepak Veereddy and Ranbir Singh GeneSiC Semiconductor, Inc., 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA sid@genesicsemi.com Keywords: Silicon Carbide, GTO, Thyristors, High-Voltage, High-Current, Pulsed Power. |
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DE-FG02-07ER84712) |