IAA 550 Search Results

Contextual Info: W * CYPRESS ADVANCED INFORMATION CY7C1021 64K x 16 Static R A M Features • High speed — Iaa = 12 n s • CMOS for optimum speed/power • Low active power — 1020 mW • Available in 450 x 550-mil LCC • Automatic power-down when deselected • Easy memory expansion with CEi.

145-BBNH

Abstract: iaa 550 IAA-550B 6298
Contextual Info: 13 II 12 A S S 'Y PROC. A 1 9 7 8 6 1 2145 3 1 2 1 l.4± .5 NOTES T E R M IN A L S PARTS (3.96 HOUSING 52±.05) T E R M IN A L 6. A S S 'Y D IA , 100 2 145 - ¥ * N * * * ARE TO IN F O R M A T IO N rs ( 3 . 3 5 * . IQ) -DIA PACKAGING >'Y. PROCEDURE PRODUCT.

aa9a

Abstract: i507 ramps 1.4
Contextual Info: 13 II 12 A S S 'Y PROC. A 1 9 7 8 6 1 2145 3 1 2 1l.4±.5 NOTES T E R M IN A L S PARTS (3.96 HOUSING 52±.05) T E R M IN A L 6. A S S 'Y D IA , 100 2 145 - ¥ * N * * * ARE TO IN F O R M A T IO N rs ( 3 . 3 5 * . IQ) -DIA PACKAGING >'Y. PROCEDURE PRODUCT.

micron HEADBOARD

Abstract: MT9V111
Contextual Info: MT9V111: Automotive Addendum Applications 1/4-Inch SOC VGA CMOS Active-Pixel Digital Image Sensor MT9V111 Automotive Addendum Table 1: Key Performance Parameters Parameter Figure 1: Ball Assignment Typical Value Optical format Active imager size Active pixels

DAKT

Abstract: RY74 Scans-001793
Contextual Info: ry-74B rEHEPATOPHbIM TETPOfl TETRODE T eH epaTopH biM T e T p o fl ry-74B n p e flH a 3 H aneH ,qrm y c u n e H u n m o ih h o c t m b m n p o K o n o n o c H b ix H e n e p e c T p a n B a e M b ix y c m ii/iT e n a x i/i A f in yc u n e H M a m o u ^h o c t u O flH o n o n o c H o ro cm m a n a b C T a q n o H a p H b ix n nepe,qBM>KHbix p a flMOTeXHUMeCKMX y c T p o iic T B a x .

CBC-1

Contextual Info: PHILIPS CBC1 DOUBLE DIODE-TRIODE for use as L.F. amplilier, sig­ nal detector, A.G.C. and other purposes DOUBLE DIODE-TRIODE pour utilisation comme amplifi­ catrice B.F.,détectrice de signaux, C.A.V. et d'au­ tres applications DOPPELDIODE-TRIODE zur Verwendung als N.F. Verstär­

LH53517

Abstract: LH53517D TSOP028-P-0813 1LD22 1LD2
Contextual Info: CMOS 512K 64K x 8 M ask-Program m able ROM FEATURES PIN CONNECTIONS • 65,536 words x 8 bit organization 28-PIN DIP 28-PIN SOP TOP VIEW "N Z ' 1• 28 A i 2C 2 27 □ a 7I= 3 26 □ a 13 Agd 4 25 □ a 5C 5 24 ID Ag A-isEI Standby: 550 \l\N (MAX.) • Static operation

Contextual Info: PART NUMBER REV. SLX—LX5093UW C/C REV, 0 5 .9 0 E.C.N. B NUMBER AND REVISION COMMENTS DATE A E.C.N. # 1 1 1 8 9 . 1 2 .0 3 .0 4 B E.C.N. # 1 1 3 9 2 . 01.1 7.07 C0O.232] 05.00 WO.1 9 7 ] ELECTRO -OPTICAL CHARACTERISTICS Ta = 2 5 T PARAMETER SYMBOL MIN PEAK WAVELENGTH

Contextual Info: MT9V112 - SOC VGA DIGITAL IMAGE SENSOR Features 1/6-Inch SOC VGA CMOS Digital Image Sensor MT9V112I2ASTC For the latest data sheet, refer to Aptina’s Web site: www.aptina.com Features Table 1: • System-On-a-Chip SOC —Completely integrated camera system

7550N

Contextual Info: UNCONTROLLED DOCUMENT SC :0 .0 5 CAUTION: STATIC SENSITIVE DEVICE PART NUMBER REV. SM L—LXFZ0603UW W -TR P3 FOLLOW PROPER ES.D. HANDLING PROCEDURES CAUTION: MOISTURE SENSITIVE DEVICE p r b j m Jn a r y 1. SHELF UFE M SEALED BAG; 12 MONTHS ST < 4 0 C AND < 9 0 X RELATIVE HUNDITY RH .

MT9M111

Contextual Info: MT9V112 - SOC VGA DIGITAL IMAGE SENSOR Features 1/6-Inch SOC VGA CMOS Digital Image Sensor MT9V112I2ASTC For the latest data sheet, refer to Aptina’s Web site: www.aptina.com Features Table 1: • Aptina DigitalClarity CMOS Imaging technology • System-On-a-Chip SOC —Completely integrated

Contextual Info: HM62832UH Series 32,768-Word x 8-Bit High Speed CMOS Static RAM I FEATURES High speed Access time 15/20 ns max. Low power Standby: 15 (typ.) (L-version) Operation: 550/400 mW (typ.) Single 5V supply Completely static memory No clock or timing strobe required

upd4217405-60

Abstract: NEC 4217405-60
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 42S 17405, 4217405 16 M -BIT D Y N A M IC R A M 4 M -W O R D B Y 4-BIT, E D O D escription T h e ìì P D 4 2 S 1 7 4 0 5 , 4 2 1 7 4 0 5 a re 4 ,1 9 4 ,3 04 w o rd s b y 4 b its C M O S d yn a m ic R A M s with o p tio n a l E D O .

TSOP 54 PIN

Contextual Info: IBM0164160B 4M x 16 DRAM A d van ce Features • 4 ,1 9 4 ,3 0 4 word by 16 bit organization • Single 3 .3 ± 0 .3 V pow er supply • Low P ow er Dissipation - Active: 3 9 6 m W /3 6 0 m W /3 2 4 m W m ax - S tandby (L V T TL Inputs): 7 .2 m W (m ax)

uf41

Abstract: Philips KS 40 LA 4636 UF 41 572H philips B
Contextual Info: c JU n iu k ä t" [ÜF4Ï PENTODE with variable mutaal conductance for use as H.F. and I.F. amplifier PENTHODE à pente variable pour l'utilisation co:n:r.e amplificatrice H.F. ou M.F. PENTH0D2 mit veränderlicher Steilheit -zur Verwendung als H.?.- und Z.F. Verstärker

Contextual Info: ^ Dense-Pac Microsystems, I n c ^ ^ ^ DPS8X16A H |C H s p EEp ^ x 16 C M O S SR A M P G A M O D U L E PRELIMINARY DESCRIPTION: The DPS8X16A is a 40-pin Pin Grid Array P G A consisting of two 8K X 8 SRAM devices in ceram ic LC C packages surface mounted on a co-fired ceram ic

Contextual Info: ULTRA BRIGHT RED SOLID STATE LAMPS MEMUM TPRÖFILE 4.60 FLANGELESS „ LITEm LTL-10263W TAIWAN LI TON ELECTRONIC 4 ^ E j> flfl3Sfa«?5 0003431 05b • T L I T FEATURES • • • • • U L T R A BRIGHTNESS. NEW S T U R D Y LEADS. 1C CO M PATIBLE/LO W CURRENT

BA8H

Abstract: BA 5205 L BA7H I3B2 C2145 145-BBNH BA6H ag9a
Contextual Info: 13 II 12 A S S 'Y PROC. A 1 9 7 8 6 1 2145 3 1 2 1 l.4± .5 NOTES T E R M IN A L S PARTS (3.96 HOUSING 52±.05) T E R M IN A L 6. A S S 'Y D IA , 100 2 145 - ¥ * N * * * ARE TO IN F O R M A T IO N rs ( 3 . 3 5 * . IQ) A = RIG H T PRODUCT. (.30 )7 .0 1 2

ECH71

Abstract: J24H 103h
Contextual Info: Triode-Heptode für • ZF- und NF- Verstärkung Mischung, Phasenumkehr ECH 71 T R H, <0 J kj 5 m Gewicht ca. 35g 1 I 31$-* 4 1 .Heizerwerte für Parallelspeisung Heizspannung Heizstrom Oxydkatode, indirekt geheizt ü, h 6 .3 V oa• 0 | ^5 A 2 .Betrie bswerte

ECH71

Abstract: 1c3h j 11950 ScansU9X25 CA35G
Contextual Info: Triode-Heptode für • ZF- und NF- Verstärkung Mischung, Phasenumkehr ECH 71 T R H, <0 J kj 5 m Gewicht ca. 35g 1 .Heizerwerte für Parallelspeisung ü, Heizspannung Heizstrom h Oxydkatode, indirekt geheizt 1 I 31$-* 4 6.3 oa• 0|^5 V A 2 .Betrie bswerte

MV5353

Abstract: 100-C
Contextual Info: m ulticom p ALL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPR ESS WRITTEN CONSENT OF SPC TECHNOLOGY. REVISIONS DCP # REV DOC. NO. S P C - F 0 0 5 * Effective: 7 / 8 / 0 2 DESCRIPTION DRAWN DATE

Contextual Info: 1206 SMD TYPE LED O P T O E L E C T R O N IC S lighting:theway VAOL-S12GT4 Features • Fit automatic placement equipment. • Fit Compatible with infrared and vapor phase reflow solder process. • Pb-free. • RoHS compliant. Descriptions • • • •

Contextual Info: m ulticom p ALL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPR ESS WRITTEN CONSENT OF SPC TECHNOLOGY. REVISIONS DCP # REV DOC. NO. S P C — F 0 05 DESCRIPTION 1908 DRAWN DATE EO 6/7/06 RELEASED

Contextual Info: 0603 SMD TYPE LED O P T O E L E C T R O N IC S lighting:theway V A O L -S6G T 4 Features • Fit automatic placement equipment. • Fit Compatible with infrared and vapor phase reflow solder process. • Pb-free. • RoHS compliant. Descriptions • • •