LH53517 Search Results

flash 64m

Contextual Info: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161

A12E

Contextual Info: LH53517 CMOS 512K 6 4 K x 8 MROM FEATURES PIN CONNECTIONS • 65,536 words x 8 bit organization 28-PIN DIP 28-PIN SOP • Access time: 150 ns (MAX.) TOP VIEW C ' • Low-power consumption: Operating: 165 mW (MAX.) Standby: 550 |aW (MAX.) AisC 1* 28 □ v cc

Contextual Info: LH53517 FEATURES CMOS 512K 6 4 K x 8 MROM PIN CONNECTIONS • 65,536 words x 8 bit organization • Access time: 150 ns (MAX.) 28-PIN DIP 28-PIN SOP TOP VIEW / • Low-power consumption: Operating: 165 mW (MAX.) Standby: 550 [iW (MAX.) A ,5 n 1• \ 28 ^ Vcc

Contextual Info: LH53517 FEATURES CMOS 512K 64K x 8 MROM PIN CONNECTIONS • 65,536 words x 8 bit organization • Access time: 150 ns (MAX.) TOP VIEW 28-PIN DIP 28-PIN SOP S • Low-power consumption: Operating: 165 mW (MAX.) A15C 1• N 28 □ V qc A12IZ 2 27 Zl a 14 a 7C

LH53517

Abstract: LH53517D TSOP028-P-0813
Contextual Info: LH53517 FEATURES • 65,536 words x 8 bit organization • Access time: 150 ns MAX. CMOS 512K (64K × 8) MROM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP • Low-power consumption: Operating: 165 mW (MAX.) Standby: 550 µW (MAX.) A15 1 28 VCC A12 2 27

TSOP028-P-0813

Abstract: LH53517 LH53517D
Contextual Info: LH53517 CMOS 512K 64K x 8 Mask-Programmable ROM FEATURES • 65,536 words × 8 bit organization • Access time: 150 ns (MAX.) PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP • Low-power consumption: Operating: 165 mW (MAX.) Standby: 550 µW (MAX.) A15

536G

Abstract: LH534600
Contextual Info: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)

lh57257

Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Contextual Info: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429

LH231G

Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
Contextual Info: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200

LQ070T5BG01

Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
Contextual Info: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66

IR3Y29B

Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
Contextual Info: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX

LH53517

Abstract: LH53517D TSOP028-P-0813 1LD22 1LD2
Contextual Info: CMOS 512K 64K x 8 M ask-Program m able ROM FEATURES PIN CONNECTIONS • 65,536 words x 8 bit organization 28-PIN DIP 28-PIN SOP TOP VIEW "N Z ' 1• 28 A i 2C 2 27 □ a 7I= 3 26 □ a 13 Agd 4 25 □ a 5C 5 24 ID Ag A-isEI Standby: 550 \l\N (MAX.) • Static operation

48 tsop flash pinout

Abstract: LH23512
Contextual Info: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)

lh5359

Abstract: e5bx
Contextual Info: Ffe MASK ROM * ★ • MASK ROMs New product Under development * Features • Product lineup covers 11 capacity ranges from 256 k-bit to 128 M-bit. • Product variations with 3 types o f pinout including JEDEC standard EPROM, Mask ROM specific and Flash memory compatible pinout.

lh5s4

Abstract: LH-MN47XX lh5s4axx LH5359 LH5s lh5317 LH532CXX 32DIP
Contextual Info: MEMORIES • JEDEC Standard EPROM Pinout • Low voltage operation 3 V, 1.8 V Access time Bit Capacity configuration 1M 2M 4M Model No. LH53V1ROON/T LH53V2R00AN/AT LH53V2T00E LH53V2YOONÆ LH53V4T00E LH53V4R00AN/AT LH53V4Y00NÆ x 8 x 8 x 8 User’s No. Supply

Contextual Info: CMOS 512K 64K x 8 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 65,536 words x 8 bit organization • Access time: 150 ns (MAX.) 2 8 -P IN D IP 2 8 -P IN SO P T O P V IE W / - A15C • Low-power consumption: Operating: 165 mW (MAX.) 28 ^ v cc

GI9332

Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
Contextual Info: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8