IC 1200 P 60 Search Results

A 7800

Abstract: a7800
Contextual Info: FZ 1200 R 12 KF 1 Transistor Thermische Eigenschaften Transistor Rthjc Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 1200 A Ic Thermal properties DC, pro B a u ste in /p e r m odule 0,016 °C/W pro Baustein / per module 0,008 °C/W

free ic 555

Abstract: H9140
Contextual Info: 1200 -1 6 0 0 MHz Standard Hybrid Amplifier P a ra m e te rs 1200-1600 M H z bandwidth Ann a nfiR ^£Drl~4UUO S p e c if ic a t io n Temperature +25 Frequency range dB + I.0/-I.0 dB M ax dB M ax p-p Gain flatness 1.0 1.0 Reverse isolation 11 1 VSW R °c MHz

Contextual Info: nixYS Common Cathode Fast Recovery Epitaxial Diode FRED DSEK30 r— v nsM V v RRM V 1200 1200 ~l Type I -N -. f 4 " — A DSEK 30-12A iFAVM ic V,RR M 2x26 A 1200 V t„ 40 ns TO-247 AD Î A A C (TAB) Symbol Test C onditions ^FRMS "^"vj IpAVM ^FRM JPdt P,o,

siemens igbt BSM 300

Abstract: siemens igbt BSM 75 gb 100 siemens igbt BSM 100 gb bsm 50 Gb 120 IGBT GAL 200 gb BSM 15 GB C67070-A2111-A70 C67076-A2006-A70 C67076-A2109-A siemens igbt BSM
Contextual Info: IGBTLeistungsmodule Typ Type IGBTPower Modules Vce V Ic A ^thJC K/W Aöt W Halbbrücken P^CEsantyp. V Bestellnummer Ordering Code Bild Figure Half-Bridges BSM 25 GB 120 DN 2 1200 2x25 <0.6 200 2.7 C67076-A2109-A70 17b BSM 35 GB 120 DN 2 1200 2x35 <0.44 280

D61500

Contextual Info: APPENDIX A S P E C IF IC A T IO N S Single-Pulse Peak Current Ratings Per Safety Agency Certification Testing CSAC22.2 VAC Range 120-150 180-300 320-580 620-1000 D58 na na na na D73 1200 1200 na na D61 2000 2000 2000 na Disk Series Designation D71 D62 D69

LVJ DIODE

Contextual Info: FF 600 R 12 KF 1 Transistor Transistor Elektrische Eigenschaften Electrica] properties VcES Maximum rated values 1200 Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro Baustein /p e r module 0,016 DC, pro Z w e ig /p e r arm 0,032 RthCK pro B austein/p e r module

actel 5962

Abstract: ACTEL 1020B MAX4437 6ba1 5602m e/actel 1240a
Contextual Info: Æ ic te - m H i R e i F P G A ! v 2 .0 s Features 3 2 0 0 DX • H ighly P re d ic ta b le P erform ance w ith 100 Percent A utom atic P lacem ent and Routing • 100 M H z System Logic In teg ratio n • • Device Sizes from 1200 to 20,000 gates

Contextual Info: -L e L j W ' _ c a u n n n COMPONENTS ft AC1218 10 TO 1200 MHz A d 219 T0~ 8CASCADABLE AC1218 T yp ic a l V alues High Dynamic Range . High Output P o w e r .

WESTCODE SW

Contextual Info: T E C H N IC A L P U B L IC A T IO N $ WESTCODE SEMICONDUCTORS D P20 ISSUE 2 May, 1989 — - - - - Stud-Base Silicon Rectifier Diodes Type PCN/PCR020 30amperes average: up to 1200 volts Vr r m RATINGS Maximum values at 175°C Tj unless stated otherwise

RGE 17-18

Abstract: TO220-4 weight
Contextual Info: □ IXYS Advanced Technical Information IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series V CES IC 25 V C E sa t =1200 V = 30 A = 3.8 V = 115 ns t fi( ty p ) Sym bo l T e s tC o n d itio n s V CES ^ = 2 5 °C to 150°C 1200 V V CGR Tj = 25 °C to 150°C ; R GE = 1 M £i

U 3870

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS n ic K ic o z i series • Dimensions 160V 2C Cap. ( m F) 390 470 560 680 820 1000 1200 1500 1800 2200 2700 Size /DXL(mm) B a te d rip p le (m A ) 20 X 2 5 20X30 22X25 200V (2D) tan S LeakageCurrent (mA) Code 1190 0.15 0.74

7SR10

Abstract: FF75R10KF2 75r10kf2
Contextual Info: FF 75 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte VcES Maximum rated values 1200 Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,11 DC, pro Z w e ig /p e r arm

Contextual Info: FS 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Thermal properties Rthjc DC, pro B a u ste in /p e r module 0,068 °C/W DC, pro Z w e ig /p e r arm 0,410 °C/W Maximum rated values V q ES Ic 1200

7SR10

Contextual Info: FF 75 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte VcES Maximum rated values 1200 Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,11 DC, pro Z w e ig /p e r arm

Contextual Info: FZ 400 R 12 KF 2 Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein /p e r module 0,052 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 400 A pro Baustein / per module Ic 0,03 °C/W

General electric SCR C147M

Abstract: C147N C147pb SCR C147PB GE C147P GE C150 C147 C52U C147D GE C147S
Contextual Info: 109 PHASE CO N T R O L SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2 N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S |V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1}

General Electric SCR C52T

Abstract: C52 SCR General electric SCR c50 General electric SCR C52 c52m 50 20 500 C52T scr c52u scr C50 C52 "SCR" C52E
Contextual Info: 109 PHASE CO N T R O L SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2 N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S | V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1}

c45 scr

Abstract: scr C50 C46U C46C C46M TRANSISTOR D1651 2N1909 C147 C147U C350
Contextual Info: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 2N 1909-16 2 N 1792-98 JEOEC C 60, 62 C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S |V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1} 500 -13 00

SGCT

Abstract: mitsubishi SGCT scr gate driver ic 600 A igbt types 6000v MITSUBISHI GATE TURN-OFF THYRISTOR scr GTO thyristor driver m57962l GTO thyristor 1200V 50A SGCT 400A NATIONAL IGBT
Contextual Info: News of Importance to Power Semiconductor Users www.pwrx.com SPRING 2002 Powerex Expands HVIGBT Line U P C O M I N G TRADE SHOWS A N D CONFERENCES HVIGBT LINE-UP Ic: A Vce(V) 50 75 100 150 200 300 400 600 800 900 1200 1600 1800 CM800HA34H CM1200HA- CM1600HC- CM1800HC34H

C520D

Abstract: C530A C600PB scr high current C520C C530 C530B C501PS C520A GE SCR 1000
Contextual Info: PHASE CONTROL SCR’s HIGH CURRENT 850 TO 1400 AM PERES GE TYPE C501 C530 C520 C600 C601 C602 700 -1700 100 - 600 100 - 400 500 - 1200 1100-1700 1600 - 2600 E L E C T R IC A L S P E C IF IC A T IO N S V O LTAG E RANGE FORW ARD C O N D U C T IO N I t |»ms

chn 521

Abstract: BA 7277 chn 548 carrier detect phase shift CHN 65 chn233 SCR 2122 Integrated 7246 MICRONAS BSP carrier detect phase shift key
Contextual Info: * MICRONAS MAS 2122 300/1200 BPS FULL DUPLËX MODEM P IN C O N F IG U R A T IO N S A P P L IC A T IO N S Extended M ode - /j P C ontrolled Bell 212 A, 103 and 113 Modems EXTENDED CCITT V.22 A, B and V.21 Modems DB7 Dialing DB6 DBS Call Progress Tone Monitoring

800A

Contextual Info: FZ 800 R 12 KF 1 Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e rm o d u le 0,02 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 800 A pro Baustein / per module Ic °C/W

Contextual Info: HIGH VOLTAGE, HIGH CURRENT ULTRA-FAST RECOVERY SILICON RECTIFIER DIODES P RV 1200 1500 1800 TYPE 3RUS2120 3RUS4120 3RUS2150 3RUS4150 3RUS2180 3RUS4180 ELECTRICAL C H A R A C T E R IST IC S at T a =25°C Unless Otherwise Specified 3RUS2 3RUS4 1.25 Amp 1.50 Amp

Contextual Info: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 50 A Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B austein/p e r module 0,155 C/W ’C/W DC, pro Zweig / per arm 0,31 C/W