2SD1309

Abstract: 2SB975 ic 3A hfe 500
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -3A ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD1309

2SC4130

Abstract: FM20 transistor+2sC4130
Contextual Info: 2SC4130 Silicon NPN Epitaxial Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=3A 10 to 30 16.9±0.3 100max IC=25mA IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V Tj

2SC3680

Contextual Info: 2SC3680 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor V IEBO VEB=7V 100max µA V V V(BR)CEO IC=10mA 800min 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 IB 3.5 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A

2SC3890

Abstract: FM20
Contextual Info: 2SC3890 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=3A 10 to 30 IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A

ZUMT617

Abstract: ZUMT717 DSA003732
Contextual Info: Super323  SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT717 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * * * * * IC CONT 1.5A 3A Peak Pulse Current Excellent HFE Characteristics Up To 3A (pulsed) Extremely Low Saturation Voltage

Contextual Info: 2SC4130 Silicon NPN Epitaxial Planar Transistor High Voltage and High Speed Switchihg Transistor 2 PC 30(Tc=25°C) Tj V hFE VCE=4V, IC=3A 10 to 30 A VCE(sat) IC=3A, IB=0.6A 0.5max W VBE(sat) IC=3A, IB=0.6A 1.3max V 150 °C fT VCE=12V, IE=–0.5A 15typ MHz

ic 3A hfe 500

Abstract: IC 3A 2SB601
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -3A

Contextual Info: SEMICONDUCTOR KTA1001 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR CAMERA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A C FEATURES H hFE=100 320 VCE=-2V, IC=-0.5A . G J B E hFE=70(Min.) (VCE=-2V, IC=-3A). Low Collector Saturation Voltage. DIM A

2SD2045

Contextual Info: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max

2SD2045

Contextual Info: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max

FT-210

Abstract: ZUMT618 ZUMT718 DSA003732
Contextual Info: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT618 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * * * * IC CONT 1.25A 3A Peak Pulse Current Excellent HFE Characteristics Up to 3A (pulsed) Extremely Low Equivalent On Resistance; RCE(sat)

KTA1001

Contextual Info: SEMICONDUCTOR KTA1001 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR CAMERA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A FEATURES C H hFE=100 320 VCE=-2V, IC=-0.5A . G J B E hFE=70(Min.) (VCE=-2V, IC=-3A). Low Collector Saturation Voltage. DIM A

transistor a1001

Abstract: KEC SOT89 H1 SOT-89 transistor rf A1001 KTA1001 sot89 E3
Contextual Info: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. KTA1001 EPITAXIAL PLANAR PNP TRANSISTOR CAMERA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES • hFE=100~320 V ce=-2V, Ic=-0.5A . • hFE=70(Min.) (Vce=-2V, Ic=-3A). • Low Collector Saturation Voltage.

2SB1431

Abstract: 2SB143 ic 3A hfe 500
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, IC= -3A) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -3A, IB= -3mA)

ZUMT618

Abstract: ZUMT718
Contextual Info: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT718 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 3A Peak Pulse Current * Excellent HFE Characteristics Up To 3A (pulsed) * Extremely Low Saturation Voltage * Extremely Low Equivalent On Resistance; RCE(sat)

2SC4546

Abstract: FM20 vbe 12v, vce 600v NPN Transistor
Contextual Info: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A

IC 1A datasheet

Abstract: ZUMT618 ZUMT718 DSA003732
Contextual Info:
Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT718 ISSUE 2 - JUNE 2000 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 3A Peak Pulse Current * Excellent HFE Characteristics Up To 3A (pulsed) * Extremely Low Saturation Voltage * Extremely Low Equivalent On Resistance; RCE(sat)

transistor npn high speed switching 5A 600v

Abstract: 2SC4546 FM20 vbe 12v, vce 600v NPN Transistor
Contextual Info: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A

Contextual Info:
Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT718 ISSUE 2 - JUNE 2000 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 3A Peak Pulse Current * Excellent HFE Characteristics Up To 3A (pulsed) * Extremely Low Saturation Voltage * Extremely Low Equivalent On Resistance; RCE(sat)

2SD2014

Abstract: 2SB1257 FM20
Contextual Info: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA

2SD2014

Abstract: 2SB1257 FM20 S8010
Contextual Info: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA

KTD1415

Contextual Info: SEMICONDUCTOR KTD1415 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P E S B FEATURES G ᴌHigh DC Current Gain : hFE=2000 Min. at VCE=3V, IC=3A. ᴌLow Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A.

Contextual Info: SEMICONDUCTOR KTD1413 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P FEATURES B E G High DC Current Gain : hFE=2000 Min. at VCE=2V, IC=3A. K Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A.

Contextual Info: SEMICONDUCTOR KTD1415 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P FEATURES B E G High DC Current Gain : hFE=2000 Min. at VCE=3V, IC=3A. K Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A.