SMD-16A
Abstract: SDC09 SMD16A TRANSISTOR SMD 1a 9 power transistor array
Text: Surface-mount Power Transistor Array SDC09 ICBO IEBO VCEO hFE VCE sat VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min
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SDC09
10max
15max
80min
SMD-16A
SMD-16A
SDC09
SMD16A
TRANSISTOR SMD 1a 9
power transistor array
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2SD2014
Abstract: 2SB1257 FM20
Text: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA
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2SD2014
2SB1257)
O220F)
2000min
10max
80min
75typ
45typ
2SD2014
2SB1257
FM20
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2SC3852A
Abstract: 2sc3852 FM20 transistor 2sc3852
Text: 2SC3852/3852A High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor ICBO 80 VCB= IC 3 A V(BR)CEO VEB=6V 100 V µA 100max 60min IC=25mA 80min V 1 A hFE VCE=4V, IC=0.5A 500min PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A
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2SC3852/3852A
100max
60min
80min
500min
15typ
50typ
10max
2SC3852A
2SC3852
2SC3852A
2sc3852
FM20
transistor 2sc3852
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2SC4466
Abstract: 2SA1693
Text: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ
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2SC4466
2SA1693)
10max
80min
50min
20typ
110typ
to100)
to140)
2SC4466
2SA1693
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2SC3851
Abstract: 2SC3851A FM20
Text: 2SC3851/3851A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1488/A A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB
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2SC3851/3851A
2SA1488/A)
100max
60min
80min
to320
15typ
60typ
2SC3851
2SC3851A
FM20
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TMS1000
Abstract: No abstract text available
Text: 2SC4512 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1726 Conditions Ratings Unit V ICBO VCB=120V 10max µA VCEO 80 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC=25mA 80min V IC 6 A hFE VCE=4V, IC=2A 50min 10.2±0.2 3 A VCE(sat) IC=5A, IB=0.2A
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2SC4512
2SA1726)
10max
80min
50min
20typ
110typ
MT-25
to100)
TMS1000
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2SD2014
Abstract: 2SB1257 FM20 S8010
Text: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA
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2SD2014
2SB1257)
O220F)
2000min
10max
80min
75typ
45typ
150x150x2
2SD2014
2SB1257
FM20
S8010
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TRANSISTOR SMD 1a 9
Abstract: SDC09 smd transistor 142 SMD-16A
Text: Surface-mount Power Transistor Array SDC09 ICBO IEBO VCEO hFE VCE sat VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min
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SDC09
10max
15max
80min
SMD-16A
TRANSISTOR SMD 1a 9
SDC09
smd transistor 142
SMD-16A
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2SC5099
Abstract: 2SA1907 DSA0016511
Text: 2SC5099 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1907 V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz
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2SC5099
2SA1907)
FM100
10max
80min
50min
20typ
110typ
2SC5099
2SA1907
DSA0016511
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2SC4511
Abstract: TRANSISTOR C-111 2SA1725 FM20 DSA0016510
Text: 2SC4511 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1725 V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz
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2SC4511
2SA1725)
10max
80min
50min
20typ
110typ
to100)
to140)
2SC4511
TRANSISTOR C-111
2SA1725
FM20
DSA0016510
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TRANSISTOR C-111
Abstract: 2SA1726 2SC4512
Text: 2SC4512 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1726 Conditions 2SC4512 Unit V ICBO VCB=120V 10max µA VCEO 80 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC=25mA 80min V IC 6 A hFE VCE=4V, IC=2A 50min 10.2±0.2 3 A VCE(sat) IC=5A, IB=0.2A
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2SC4512
2SA1726)
MT-25
10max
80min
50min
20typ
110typ
to100)
TRANSISTOR C-111
2SA1726
2SC4512
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2SA1907
Abstract: 2SC5099
Text: 2SC5099 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1907 µA V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ
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2SC5099
2SA1907)
FM100
10max
80min
50min
20typ
2SA1907
2SC5099
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2SC4466
Abstract: 2sa1693
Text: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ
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2SC4466
2SA1693)
10max
80min
50min
20typ
110typ
to100)
to140)
2SC4466
2sa1693
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Untitled
Abstract: No abstract text available
Text: Power Transistor Array STA461C External Dimensions STA4 LF400B ±0.2 25.25 V V mJ ±0.2 b 9.0 ±0.2 (Ta=25ºC) Unit µA µA V ±0.2 ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min 2.3 Test Conditions VCB = 60V
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STA461C
LF400B)
10max
15max
80min
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2SC3851
Abstract: 2SC3851A FM20 DSA0016507
Text: 2SC3851/3851A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1488/A A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB
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2SC3851/3851A
2SA1488/A)
100max
60min
80min
to320
15typ
60typ
O220F)
2SC3851
2SC3851A
FM20
DSA0016507
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2SC4511
Abstract: 2SA1725 FM20
Text: 2SC4511 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1725 V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz
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2SC4511
2SA1725)
10max
80min
50min
20typ
110typ
to100)
to140)
2SC4511
2SA1725
FM20
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Untitled
Abstract: No abstract text available
Text: SS6781A Battery Charger Controller FEATURES DESCRIPTION Fast charge control of NiMH/NiCd batteries, even with a fluctuating charging current. Fast charge termination by: ∆T/∆t, -∆V, 0∆V, safety timer, maximum temperature or maximum voltage. Linearly adjustable ∆T/∆t detection slope and
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SS6781A
SO-16
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Untitled
Abstract: No abstract text available
Text: Datasheet R2A20057BM Lithium-Ion Battery Switching Charger IC with Auto Load Current Distribution R03DS0069EJ0100 Rev.1.00 Mar 1, 2013 This is a target specification. Some specs are subject to change. Description R2A20057BM is a semiconductor integrated circuit designed for Lithium-ion battery charger control IC.
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R2A20057BM
R03DS0069EJ0100
R2A20057BM
TH05-3H103F
NCP15WF104F03RC
R03DS0069EJ0100
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matsua lt48 digital quartz timer
Abstract: Matsushita lt48 timer Matsua lt48 timer matsushita lt48 digital quartz timer Matsua timer PM48 Matsushita timer PM48 LT48 digital quartz timer AT8-DF8K Matsushita lt48w twin timer lc48
Text: ’06–’07 Timers/Time Switches/Counters/Hour Meters Timers/Time Switches/Counters/Hour Meters ’06–’07 Please contact . Matsushita Electric Works, Ltd. Automation Controls Business Unit Head Office: 1048, Kadoma, Kadoma-shi, Osaka 571-8686, Japan
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ARCT1B274E
200610-3YT
ARCT1B274E
matsua lt48 digital quartz timer
Matsushita lt48 timer
Matsua lt48 timer
matsushita lt48 digital quartz timer
Matsua timer PM48
Matsushita timer PM48
LT48 digital quartz timer
AT8-DF8K
Matsushita lt48w twin timer
lc48
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lf817
Abstract: pnp 8 transistor array pnp array SLA8004 1/stv 9902
Text: Power Transistor Array SLA8004 Tj Tstg ICBO IEBO VCEO hFE VCE sat VFEC Ratings VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max Test Conditions Ratings VCB = –55V –100max VEB = –6V
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SLA8004
100max
60max
60min
150min
35max
55min
80min
lf817
pnp 8 transistor array
pnp array
SLA8004
1/stv 9902
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MN638S
Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein
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infringement0718
H1-C01EC0-0110015TA
MN638S
STA464C
sk 3001s
relay Re 04501
spf0001
sta509a
Schottky Diode 80V 6A
2SD2633
sk 5151s
SLA2403M
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Untitled
Abstract: No abstract text available
Text: ' T •typeNo. Package vCEO ■c cont hF E @ V c e /Ic *T Pd HI-REL HI-REL HI-REL SCREEN SCREEN NPNP PNP NPN NPN NPN T039 T018 T018 T039 T039 12 20 80 80 0.2 0.2 1 1 30-120 30-120 80min 30min 0.5/30m 0.4/30m 5/lra 5/lm 400M 350M 100M 80M 0.36 0.36 0.8 0.8
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2N3008
2N3012
2N3014
2N3019
2N3020
80min
30min
5/30m
4/30m
2N3036
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7443003
Abstract: No abstract text available
Text: CD-R O PERATIN G PLAY TEM P. —25~+70°C O PERATIN G (REC O RD ) TEM P. -5~+55°C '. . IF É ^ r u p ié ' 1 f è ìl~ 2 4 f t Ä Ì T ' X - A - 7 ' f K U > v I B i l ì S J t f t j f c "Super wide range" design assure of writing at all speed (1x to 24x)
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10OOBtffiiU
106KPa
60g/m3
5--30g/m3
30g/m3
7443003
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TIL78
Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
Text: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE
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